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Infineon Technologies CY7C1041G30-10ZSXAT
- Part No.:
- CY7C1041G30-10ZSXAT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1041G30-10ZSXAT.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:1,503
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Product details
Overview
CY7C1041G30-10ZSXAT from Infineon Technologies (formerly Cypress) is an AEC-Q100 qualified automotive-grade 4-Mbit static RAM (256K × 16-bit) with embedded single-bit error-correcting code (ECC), 10 ns access time, and operation over –40 °C to +125 °C (Automotive-E grade). It supports 2.2 V–3.6 V supply, delivers 40 mA typical active current, and features TTL-compatible I/Os in a 48-ball VFBGA package - deployed in engine control units, ADAS domain controllers, and safety-critical memory buffers.
For engineers reviewing the CY7C1041G30-10ZSXAT datasheet, CY7C1041G30-10ZSXAT pinout, CY7C1041G30-10ZSXAT application, or CY7C1041G30-10ZSXAT equivalent, key selection criteria include ECC-enabled data integrity, automotive temperature compliance, low-power standby mode (6 mA typ), and dual-byte write enable (BHE/ BLE) for partial-word updates in real-time control systems.
Technical Context
The CY7C1041G30-10ZSXAT implements a synchronous CMOS SRAM core with integrated ECC encoding/decoding logic that detects and corrects single-bit errors on-the-fly without automatic write-back. Its address space spans 18 address lines (A0–A17), supporting 256K words of 16-bit data, with dedicated byte-enable controls (BHE/BLE) enabling independent upper/lower byte writes.
It uses a single Chip Enable (CE) input for device selection and supports three control modes: read (OE active), write (WE active), and standby (CE inactive). All I/Os enter high-impedance state when CE is HIGH or during OE/WE/BHE/BLE deassertion, ensuring clean bus isolation in multi-device memory subsystems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 4 Mbit (256K × 16-bit) - provides sufficient buffer space for real-time sensor fusion or firmware scratchpad in ECUs. |
| Access time (tAA) | 10 ns - enables direct interfacing with 100 MHz microcontrollers without wait states. |
| ECC capability | Single-bit error correction (no automatic write-back) - ensures data reliability in radiation-prone under-hood environments. |
| Supply voltage range | 2.2 V to 3.6 V - compatible with automotive 3.3 V rails and tolerant of battery transients down to 2.2 V. |
| Operating temperature | –40 °C to +125 °C (Automotive-E grade) - certified for placement near powertrain or braking modules. |
| Standby current (ISB2) | 6 mA typical at 3.6 V - reduces quiescent power in always-on vehicle networks like CAN FD gateways. |
| Data retention voltage | 1.0 V - maintains memory contents during deep sleep or brown-out conditions below functional VCC. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant and Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address inputs | 18-bit address bus supporting full 256K-word addressing; no internal latching - requires stable address before CE/WE assertion. |
| I/O0–I/O15 | Bidirectional data bus | 16-bit parallel interface; high-impedance when CE, OE, BHE, or BLE are inactive - prevents bus contention. |
| CE | Chip Enable | Active-low global enable; device enters low-power ISB2 mode when HIGH - primary power gating signal. |
| WE | Write Enable | Active-low write strobe; initiates write cycle only when CE and at least one byte enable (BHE/BLE) are also LOW. |
| OE | Output Enable | Active-low read strobe; controls output drivers independently of CE - allows read-before-write or status polling. |
| BHE / BLE | Byte High/Low Enable | Independent 8-bit write controls: BHE enables I/O8–I/O15, BLE enables I/O0–I/O7 - essential for mixed-endian or partial-register updates. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q100 qualification (Grade 0/1) | Validated for automotive safety-critical applications including ISO 26262 ASIL-B systems. |
| Embedded ECC logic | On-die Hamming-code encoder/decoder corrects single-bit errors per 16-bit word without CPU intervention. |
| Low-power standby mode | ISB2 = 6 mA typical at 3.6 V enables energy-efficient memory retention in always-on domains. |
| TTL-compatible signaling | VIL ≤ 0.8 V and VOH ≥ 2.4 V at 3.6 V ensure interoperability with legacy 3.3 V microcontrollers and FPGAs. |
| 1.0 V data retention | Maintains stored values during undervoltage events (e.g., cranking), reducing need for external backup capacitors. |
Applications
| Engine Control Unit (ECU) | Advanced Driver Assistance Systems (ADAS) |
|---|---|
|
Use Scenario: Real-time storage of sensor-calibrated lookup tables and transient engine parameters during combustion cycles. IC Role / Device Role / Timing Role: High-speed, ECC-protected scratchpad memory interfaced directly to MCU's external bus with 10 ns timing. Use Value: Prevents corruption of fuel-mapping data due to alpha particles or EMI in high-temperature under-hood environments. |
Use Scenario: Buffering radar point-cloud data between 77 GHz RF front-end and SoC pre-processing pipeline. IC Role / Device Role / Timing Role: Low-latency, byte-selectable memory for burst-mode data ingestion with deterministic 10 ns read/write timing. Use Value: Enables partial-word writes via BHE/BLE to update individual radar object fields without disturbing adjacent tracking metadata. |
| Brake-by-Wire Controller | Vehicle Domain Controller |
|
Use Scenario: Storing fail-operational control state variables and redundancy checksums during hydraulic actuation sequences. IC Role / Device Role / Timing Role: Safety-certified SRAM with SER FIT < 0.1 FIT/Mb used in ASIL-D partitioned memory zones. Use Value: Meets ISO 26262 hardware fault tolerance requirements by correcting bit flips before they propagate to actuator commands. |
Use Scenario: Shared memory resource for inter-processor communication between zonal gateway MCU and Ethernet switch ASIC. IC Role / Device Role / Timing Role: Dual-port accessible SRAM with HI-Z bus isolation supporting concurrent read/write arbitration. Use Value: Eliminates need for external bus transceivers by enabling clean tristate control via CE/OE/BHE/BLE coordination. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar automotive SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV25616EDBLL-10BLI | No embedded ECC; 256K × 16-bit, 10 ns, –40 °C to +85 °C (Industrial grade) | Lacks AEC-Q100 qualification and ECC - suitable only for non-safety-critical infotainment subsystems. | Select only if system-level ECC is implemented in software or upstream controller. |
| MT45W8MW16BGX-107 IT:A | LPDDR2 SDRAM (not SRAM); 8M × 16-bit, 107 MHz clock, –40 °C to +85 °C | Requires refresh circuitry and command protocol; higher bandwidth but non-deterministic latency. | Choose only when sustained throughput > 1.7 GB/s is required and deterministic 10 ns access is not mandatory. |
Compared with IS61WV25616EDBLL-10BLI and MT45W8MW16BGX-107 IT:A, the CY7C1041G30-10ZSXAT uniquely combines AEC-Q100 Grade 1 qualification, on-die ECC, and true 10 ns asynchronous access - making it the sole option for ASIL-B/C memory buffers where data integrity and timing predictability are co-constrained.
Availability
CY7C1041G30-10ZSXAT is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, and brake-by-wire systems requiring stable component supply across extended automotive product lifecycles.
Supply support for CY7C1041G30-10ZSXAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and security solutions, with global R&D and manufacturing infrastructure.
CY7C1041G30-10ZSXAT belongs to Infineon's automotive SRAM portfolio, designed specifically for safety-critical memory applications demanding AEC-Q100 compliance, ECC resilience, and extended temperature operation in powertrain and chassis systems.
FAQ
Does CY7C1041G30-10ZSXAT support automatic error correction write-back?
No. The device performs single-bit error correction on read operations but does not automatically rewrite corrected data to the memory array. Error detection and correction occur transparently in the data path, and corrected values appear at the I/O pins without altering the stored bit pattern unless explicitly rewritten by the host system.
What is the maximum operating frequency supported by CY7C1041G30-10ZSXAT?
The device has a 10 ns access time (tAA), enabling reliable operation at up to 100 MHz in asynchronous interface configurations. It does not use a clock input; timing is governed by CE, OE, and WE setup/hold relationships defined in the AC switching characteristics table.
Can CY7C1041G30-10ZSXAT operate at 2.5 V supply?
Yes. Its specified VCC range is 2.2 V to 3.6 V, and all DC and AC parameters - including tAA = 10 ns and ISB2 = 6 mA - are guaranteed across this full range, including at 2.5 V nominal operation with appropriate derating for temperature and process variation.
Is the 48-ball VFBGA package lead-free and RoHS compliant?
Yes. The CY7C1041G30-10ZSXAT uses a Pb-free, RoHS-compliant 48-ball VFBGA package with NiPdAu surface finish, meeting JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3) and reflow profile requirements for lead-free assembly.
CY7C1041G30-10ZSXAT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY7C1041G30-10ZSXAT FAQ
1.How can I place an order for CY7C1041G30-10ZSXAT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1041G30-10ZSXAT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1041G30-10ZSXAT reliable?
The price and inventory of CY7C1041G30-10ZSXAT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1041G30-10ZSXAT is usually 5 days.
3.What payment methods are accepted for CY7C1041G30-10ZSXAT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1041G30-10ZSXAT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1041G30-10ZSXAT?
CY7C1041G30-10ZSXAT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1041G30-10ZSXAT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1041G30-10ZSXAT?
For technical support, including CY7C1041G30-10ZSXAT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1041G30-10ZSXAT requirements.
6.How does Aetrix verify that CY7C1041G30-10ZSXAT is sourced from the original manufacturer or authorized distributors?
All CY7C1041G30-10ZSXAT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1041G30-10ZSXAT meets industry standards.
7.What is the process for return or replacement of CY7C1041G30-10ZSXAT?
All CY7C1041G30-10ZSXAT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1041G30-10ZSXAT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1041G30-10ZSXAT part is unused and in its original packaging.
Return procedure for CY7C1041G30-10ZSXAT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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