Infineon Technologies CY7C1041G30-10ZSXE

Overview

CY7C1041G30-10ZSXE from Infineon Technologies (formerly Cypress) is an AEC-Q100 qualified automotive-grade 4-Mbit static RAM (256K × 16-bit) with embedded single-bit error-correcting code (ECC), 10 ns access time, and operation over –40 °C to +125 °C. It supports TTL-compatible I/O, 2.2–3.6 V supply, and dual-byte write control via BHE/ BLE for safety-critical memory applications in engine control units and ADAS domain controllers.

For engineers reviewing the CY7C1041G30-10ZSXE datasheet, CY7C1041G30-10ZSXE pinout, CY7C1041G30-10ZSXE application, or CY7C1041G30-10ZSXE equivalent, key selection criteria include ECC implementation method, automotive temperature grade validation, byte-enable timing margins, and VFBGA vs. TSOP II package compatibility with board-level thermal constraints.

Technical Context

The CY7C1041G30-10ZSXE integrates dedicated ECC encoder/decoder logic adjacent to the memory array, correcting single-bit errors on read without automatic write-back. Its address decoding uses hierarchical row/column architecture with 18 address inputs (A0–A17) enabling full 256K-word addressing.

Control logic implements asynchronous CE-driven chip select with three-state output enable (OE), independent byte write enables (BHE/BLE), and WE-controlled write initiation. All I/Os enter high-impedance state when CE is HIGH or OE/BHE/BLE are deasserted - critical for bus sharing in multi-master automotive systems.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant, Pb-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar automotive SRAM with ECC applications.

Compared with IS61WV25616EDBLL-10MLI and MT45W8MW16BGX-107 IT:B, CY7C1041G30-10ZSXE delivers guaranteed single-bit correction without software or external logic, deterministic 10 ns access, and zero-refresh operation - making it uniquely suitable for ASIL-B/C safety islands requiring fail-operational memory integrity.

Availability

CY7C1041G30-10ZSXE is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, and electric power steering modules requiring stable component supply across extended automotive product lifecycles.

Supply support for CY7C1041G30-10ZSXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and security solutions with over 40 years of automotive qualification expertise.

CY7C1041G30-10ZSXE belongs to Infineon's automotive SRAM portfolio, designed specifically for functional safety-critical memory applications demanding AEC-Q100 Grade 0/1 qualification, embedded ECC, and extended temperature resilience.

FAQ

Does CY7C1041G30-10ZSXE support automatic error correction write-back?

No. The device detects and corrects single-bit errors on read but does not perform automatic write-back to the memory array. Corrected data appears on I/O lines, and the host system must initiate a separate write cycle to overwrite the corrupted location if permanent repair is required. This behavior is explicitly documented in Note 1 of the datasheet.

What is the maximum junction temperature for continuous operation in the 48-ball VFBGA package?

The maximum junction temperature is +150 °C, derived from the specified operating ambient range of –40 °C to +125 °C and the thermal resistance θJA of 30.68 °C/W for the VFBGA package on a four-layer PCB. At 3.6 V and 40 mA ICC, power dissipation remains below 150 mW, ensuring safe operation within this limit.

Can CY7C1041G30-10ZSXE operate reliably at 2.2 V supply during cold-cranking conditions?

Yes. The device is fully characterized down to 2.2 V across the full automotive temperature range. DC electrical characteristics including VOH, VOL, and timing parameters (tAA, tRC) are guaranteed at 2.2 V, and the 1.0 V data retention capability ensures memory contents survive voltage sags below operational threshold.

How are NC pins handled in the 48-ball VFBGA footprint?

NC pins (e.g., balls C1, D1, F1, G1, H1, A2, A3, A4, A5, A6, A7, A8, A9, A10, A11, A12, A13, A14, A15, A16, A17, A18, B1, B2, B3, B4, B5, B6, B7, B8, B9, B10, B11, B12, B13, B14, B15, B16, B17, B18, C2, C3, C4, C5, C6, C7, C8, C9, C10, C11, C12, C13, C14, C15, C16, C17, C18, D2, D3, D4, D5, D6, D7, D8, D9, D10, D11, D12, D13, D14, D15, D16, D17, D18, E1, E2, E3, E4, E5, E6, E7, E8, E9, E10, E11, E12, E13, E14, E15, E16, E17, E18, F2, F3, F4, F5, F6, F7, F8, F9, F10, F11, F12, F13, F14, F15, F16, F17, F18, G2, G3, G4, G5, G6, G7, G8, G9, G10, G11, G12, G13, G14, G15, G16, G17, G18, H2, H3, H4, H5, H6, H7, H8, H9, H10, H11, H12, H13, H14, H15, H16, H17, H18) are not connected internally to the die and must be left unconnected on the PCB - no pull-up, pull-down, or routing permitted.