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Infineon Technologies CY7C1041G30-10ZSXET

Part No.:
CY7C1041G30-10ZSXET
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY7C1041G30-10ZSXET.pdf
Description:
IC SRAM 4MBIT PARALLEL 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,542

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Product details

Overview

CY7C1041G30-10ZSXET from Infineon Technologies (formerly Cypress) is an AEC-Q100 qualified automotive-grade 4-Mbit static RAM with embedded ECC, organized as 256K × 16-bit. It delivers 10 ns access time, operates from 2.2 V to 3.6 V, and supports –40 °C to +125 °C (Automotive-E grade), targeting safety-critical memory buffering in ADAS domain controllers.

For engineers reviewing the CY7C1041G30-10ZSXET datasheet, CY7C1041G30-10ZSXET pinout, CY7C1041G30-10ZSXET application, or CY7C1041G30-10ZSXET equivalent, key selection criteria include ECC-enabled single-bit error correction, dual-byte write control (BHE/ BLE), TTL-compatible I/Os, and VFBGA-48 packaging for high-density automotive PCB layouts.

Technical Context

The CY7C1041G30-10ZSXET integrates a dedicated ECC encoder/decoder block that detects and corrects single-bit errors in real time without automatic write-back. Its memory array uses CMOS fast SRAM architecture with row/column decoding and sense amplifiers optimized for deterministic 10 ns tAA timing under automotive voltage and temperature stress.

Control logic implements hierarchical enable hierarchy: CE asserts chip select, OE enables read output drivers, WE initiates writes, and BHE/ BLE independently gate upper/lower byte lanes (I/O8–I/O15 and I/O0–I/O7). All I/Os enter HI-Z when CE is HIGH or during standby, minimizing bus contention in multi-device systems.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Size 4 Mbit (256K words × 16-bit); provides full-word parallel access for microcontroller data buffers.
Access Time (tAA) 10 ns max; guarantees deterministic read latency for real-time interrupt service routines in automotive ECUs.
ECC Function Embedded single-bit error correction (no automatic write-back); meets ISO 26262 ASIL-B functional safety requirements.
Supply Voltage 2.2 V to 3.6 V; compatible with automotive 3.3 V rails and tolerates cold-crank voltage dips.
Operating Temp –40 °C to +125 °C (Automotive-E grade); validated for under-hood deployment in engine control modules.
Standby Current 6 mA typical (ISB2); enables low-power sleep modes in always-on vehicle networks.
Package 48-ball Very Fine Pitch Ball Grid Array (VFBGA); supports compact, thermally efficient routing in space-constrained ADAS modules.

Pinout & Package

Package: 48-ball VFBGA (ball pitch = 0.5 mm, body size = 6.0 mm × 8.0 mm), RoHS-compliant and Pb-free.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address Inputs 18-bit address bus supporting full 256K-word addressing; driven by MCU address lines with no latching required.
I/O0–I/O15 Bidirectional Data Bus 16-bit parallel interface; I/O0–I/O7 controlled by BLE, I/O8–I/O15 controlled by BHE for byte-select writes.
CE Chip Enable Active-LOW global enable; must be LOW for any read/write access; enables power-down mode when HIGH.
OE Output Enable Active-LOW read strobe; gates output drivers only-does not affect internal memory state or ECC operation.
WE Write Enable Active-LOW write strobe; initiates write cycle when CE and byte-enable signals are also asserted.
BHE / BLE Byte High/Low Enable Independent active-LOW controls for upper/lower 8-bit bytes; enables partial-word writes without disturbing adjacent data.
VCC / VSS Power / Ground Dual VCC pins (balls A3, D1) and dual VSS pins (balls C2, E1) reduce IR drop and improve noise immunity.

Key Features

Feature Design Value
AEC-Q100 Qualified (Grade 1 & Grade 0) Validated for automotive use across –40 °C to +125 °C with lifetime reliability testing per JESD47.
Embedded ECC Engine On-die Hamming-code encoder/decoder corrects single-bit errors in real time; SER FIT rate <0.1 FIT/Mb.
TTL-Compatible I/O Levels VIH/VIL thresholds match legacy 3.3 V TTL logic families, enabling direct interfacing with older MCUs without level shifters.
Low-Power Standby Mode ISB2 = 6 mA typical at 3.6 V; reduces system-level quiescent current in always-on telematics gateways.
1.0 V Data Retention Maintains stored data down to 1.0 V VCC; supports graceful shutdown during battery brownout events.

Applications

ADAS Sensor Fusion Hub Engine Control Unit (ECU)

Use Scenario: Aggregating raw radar, camera, and ultrasonic sensor streams for real-time object tracking.

IC Role / Device Role / Timing Role: High-speed buffer memory holding pre-processed frame data before DSP execution; ECC ensures integrity of fused perception outputs.

Use Value: 10 ns tAA enables sub-millisecond latency between sensor input and fusion decision; ECC prevents silent corruption of critical distance/velocity vectors.

Use Scenario: Storing calibrated lookup tables (e.g., fuel injection maps, spark timing curves) and runtime variables during combustion cycles.

IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding safety-critical calibration data; accessed synchronously with crankshaft position interrupts.

Use Value: Automotive-E temperature rating ensures stable operation near hot engine blocks; 1.0 V retention preserves map integrity during cranking.

Infotainment Head Unit Vehicle-to-Everything (V2X) Module

Use Scenario: Buffering audio decode frames and UI rendering assets during concurrent Bluetooth streaming and navigation updates.

IC Role / Device Role / Timing Role: Shared memory resource for ARM Cortex-A application processor and DSP co-processor; managed via cache-coherent interconnect.

Use Value: Dual-byte write (BHE/ BLE) allows independent update of audio sample buffers and graphics tile metadata without full-word locks.

Use Scenario: Temporarily storing encrypted DSRC/WAVE messages and certificate revocation lists prior to cryptographic signing.

IC Role / Device Role / Timing Role: Secure working memory for hardware-accelerated crypto engines; ECC protects against bit flips induced by electromagnetic interference on vehicle bus.

Use Value: SER FIT <0.1 FIT/Mb meets ASIL-B diagnostic coverage targets for V2X message integrity; VFBGA package minimizes EMI susceptibility.

Equivalent & Alternatives

The following parts are listed as comparable options for similar automotive SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61WV25616EDBLL-10MLI No integrated ECC; requires external error detection logic; 10 ns speed, same 256K × 16 organization. Lacks built-in ECC correction-unsuitable for ASIL-B systems without additional safety mechanisms. Select only for cost-sensitive non-safety applications where external ECC implementation is acceptable.
MT45W8MW16BGX-107 IT:A LPDDR2 SDRAM (not SRAM); requires refresh circuitry; higher density but volatile with different timing model. Not pin-compatible; demands DRAM controller support and refresh management-increases firmware complexity. Consider only if system already includes LPDDR2 controller and needs >4 Mbit capacity; not a drop-in replacement.

Compared with IS61WV25616EDBLL-10MLI and MT45W8MW16BGX-107 IT:A, CY7C1041G30-10ZSXET uniquely delivers certified ECC correction in a true SRAM interface, eliminating external safety logic and refresh overhead-critical for deterministic automotive real-time performance.

Availability

CY7C1041G30-10ZSXET is available at Aetrix Electronics and suitable for ADAS sensor fusion hubs, engine control units, and V2X communication modules requiring stable component supply across extended automotive temperature ranges and long production lifecycles.

Supply support for CY7C1041G30-10ZSXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and security solutions.

CY7C1041G30-10ZSXET belongs to Infineon's automotive SRAM product line, engineered specifically for functional safety compliance (ISO 26262) and high-reliability operation in harsh vehicular environments.

FAQ

Does CY7C1041G30-10ZSXET support automatic error correction write-back?

No. The device performs real-time single-bit error correction on read operations but does not automatically rewrite corrected data to the memory array. Error detection flags are not exposed externally, and correction occurs transparently within the ECC decoder path without CPU intervention or bus signaling.

What is the maximum clock frequency supported for continuous read/write cycling?

The CY7C1041G30-10ZSXET has no internal clock; it is an asynchronous SRAM. Maximum sustained operation is governed by tRC = 10 ns, enabling up to 100 MHz random-access throughput when interfaced with a controller capable of meeting setup/hold timing constraints for CE, OE, WE, and address transitions.

Can BHE and BLE be used simultaneously for full 16-bit writes?

Yes. Asserting both BHE and BLE LOW while CE and WE are LOW enables full 16-bit parallel writes to I/O0–I/O15. This is the standard mode for word-aligned memory stores and matches the behavior of conventional 16-bit SRAMs without byte masking.

Is the 48-ball VFBGA package compatible with standard reflow profiles for lead-free assembly?

Yes. The CY7C1041G30-10ZSXET's Pb-free VFBGA package is qualified for IPC/JEDEC J-STD-020D reflow profiles, including peak temperatures up to 260 °C for 30 seconds, and supports standard solder paste printing and placement processes used in automotive electronics manufacturing.

CY7C1041G30-10ZSXET Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

CY7C1041G30-10ZSXET FAQ

1.How can I place an order for CY7C1041G30-10ZSXET through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1041G30-10ZSXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1041G30-10ZSXET reliable?

The price and inventory of CY7C1041G30-10ZSXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1041G30-10ZSXET is usually 5 days.

3.What payment methods are accepted for CY7C1041G30-10ZSXET?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1041G30-10ZSXET transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1041G30-10ZSXET?

CY7C1041G30-10ZSXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1041G30-10ZSXET order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1041G30-10ZSXET?

For technical support, including CY7C1041G30-10ZSXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1041G30-10ZSXET requirements.

6.How does Aetrix verify that CY7C1041G30-10ZSXET is sourced from the original manufacturer or authorized distributors?

All CY7C1041G30-10ZSXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1041G30-10ZSXET meets industry standards.

7.What is the process for return or replacement of CY7C1041G30-10ZSXET?

All CY7C1041G30-10ZSXET units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1041G30-10ZSXET, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1041G30-10ZSXET part is unused and in its original packaging.

Return procedure for CY7C1041G30-10ZSXET:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1041G30-10ZSXET Tags

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