Infineon Technologies CY7C1041G30-10ZSXIT

Overview

CY7C1041G30-10ZSXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 10 ns access time over 2.2 V–3.6 V supply, featuring TTL-compatible I/Os, ERR output for error indication, and low standby current (6 mA typical). It serves as fault-tolerant memory in industrial control modules requiring data integrity under EMI-prone conditions.

For engineers reviewing the CY7C1041G30-10ZSXIT datasheet, CY7C1041G30-10ZSXIT pinout, CY7C1041G30-10ZSXIT application, or CY7C1041G30-10ZSXIT equivalent, this page delivers verified package mapping (48-ball VFBGA), ECC functional behavior, byte-enable write control (BHE/ BLE), and real-world timing constraints for deterministic memory subsystem design.

Technical Context

This SRAM implements on-die ECC encoding/decoding logic that detects and corrects single-bit errors during read cycles without automatic write-back. The ERR pin asserts HIGH only when correction occurs, enabling external logging or system-level fault response.

It supports three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V); the "30" suffix confirms 2.2–3.6 V operation with 10 ns tAA. Byte-select architecture allows independent upper/lower byte writes via BHE (I/O8–I/O15) and BLE (I/O0–I/O7), preserving data coherency in mixed-width bus systems.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, JEDEC-compliant BVJXI footprint with swapped I/O byte ball positions versus BVXI.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM with ECC applications.

Compared with AS7C34098B-10TIN and IS61WV25616EDBLL-10MLI, CY7C1041G30-10ZSXIT uniquely delivers hardware ECC with dedicated ERR signaling in a single chip - reducing BOM count, eliminating timing-critical software correction, and enabling deterministic failure response in safety-aware systems.

Availability

CY7C1041G30-10ZSXIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical diagnostic data caches, and railway signaling event logs requiring stable component supply across extended product lifecycles.

Supply support for CY7C1041G30-10ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-reliability memory portfolio, emphasizing automotive, industrial, and aerospace-grade components with rigorous qualification and long-term support.

CY7C1041G30-10ZSXIT belongs to the Cypress SRAM family designed specifically for fault-tolerant embedded systems where data integrity, deterministic timing, and multi-voltage interoperability are mandatory - not general-purpose memory.

FAQ

Does CY7C1041G30-10ZSXIT perform automatic write-back after ECC correction?

No. The device detects and corrects single-bit errors during read operations but does not automatically rewrite the corrected data back to the memory array. External logic or firmware must initiate a write cycle if persistent correction is required. This behavior is explicitly documented in Note 1 of the datasheet and avoids unintended write wear during frequent soft-error events.

What is the function of the ERR pin, and how is it electrically driven?

The ERR pin is an open-drain output that asserts HIGH only when a single-bit error is both detected and corrected during a read cycle. It requires an external pull-up resistor (typically 4.7 kΩ to VCC) to establish a valid logic HIGH level. The pin remains inactive (high-impedance) during normal reads, writes, or uncorrectable multi-bit errors.

Can CY7C1041G30-10ZSXIT operate across multiple VCC ranges simultaneously?

No. The device must be powered within one specified VCC range: either 1.65–2.2 V, 2.2–3.6 V, or 4.5–5.5 V. The "30" in the part number explicitly denotes 2.2–3.6 V operation. Mixing voltages or applying intermediate values (e.g., 2.5 V with 1.8 V logic) violates absolute maximum ratings and may cause undefined behavior or accelerated wear.

How does byte-enable (BLE/BHE) control interact with ECC functionality?

BLE and BHE govern physical I/O gating during write cycles but do not alter ECC encoding scope: the full 16-bit word is always encoded, even for byte writes. On read, ECC correction applies to the entire 16-bit word regardless of which byte is accessed - meaning a corrected upper-byte read still validates the lower byte's integrity, though only the requested byte appears on I/O lines.