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Infineon Technologies CY7C1041GE-10VXI

Part No.:
CY7C1041GE-10VXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-BSOJ (0.400", 10.16mm Width)
Datasheet:
AetrixCY7C1041GE-10VXI.pdf
Description:
IC SRAM 4MBIT PARALLEL 44SOJ
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,201

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Product details

Overview

CY7C1041GE-10VXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 10 ns access time across 1.65–2.2 V, 2.2–3.6 V, or 4.5–5.5 V supply ranges. It features an active ERR output pin for real-time ECC event indication and supports byte-level writes via BHE/ BLE control. Used in industrial embedded controllers requiring data integrity under radiation-prone or long-term reliability conditions.

For engineers reviewing the CY7C1041GE-10VXI datasheet, CY7C1041GE-10VXI pinout, CY7C1041GE-10VXI application, or CY7C1041GE-10VXI equivalent, this page delivers verified package mapping (48-ball VFBGA, BVXI grade), confirmed ECC behavior (single-bit correction with ERR assertion), true standby current (6 mA typical), and functional distinction from non-ERR CY7C1041G variants.

Technical Context

This SRAM integrates dedicated ECC encoder/decoder circuitry within the memory array path, enabling automatic detection and correction of single-bit errors during read cycles without CPU intervention. The ERR pin asserts HIGH only upon successful correction - not on uncorrectable multi-bit errors - and does not trigger automatic write-back.

It operates in single chip-enable mode with TTL-compatible I/Os, supports independent high- and low-byte write enables (BHE/BLE), and places all 16 I/O lines in high-impedance state when CE is HIGH or OE/BHE/BLE are deasserted. Data retention is guaranteed at 1.0 V down to –40°C to +85°C.

Key Specifications

Parameter Value and Actual Design Meaning
Memory size 4 Mbit (256K words × 16-bit); provides 512 KB of word-addressable storage with ECC protection per 16-bit word.
Access time (tAA) 10 ns max at VCC = 2.2–3.6 V or 4.5–5.5 V; defines minimum cycle time for reliable read/write in high-speed control loops.
ECC capability Single-bit error correction with ERR output assertion; detects and corrects bit flips in stored data without software overhead.
Supply voltage ranges 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V; enables drop-in use across legacy 5 V, modern 3.3 V, and ultra-low-power 1.8 V systems.
Standby current (ISB2) 6 mA typical at VCC = 3 V and TA = 25°C; ensures low power consumption during idle states in battery-backed or energy-sensitive designs.
Operating temperature –40°C to +85°C (Industrial grade); validated for continuous operation in motor drives, PLCs, and telecom line cards.
Data retention voltage 1.0 V minimum; guarantees non-volatile data hold during brown-out or controlled power-down sequences.

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, JEDEC-compliant BVXI grade (pinout matches Figure 2 in datasheet Rev. *N).

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address inputs 18-bit address bus supporting full 256K-word addressing; A0–A17 decoded internally for row/column selection.
I/O0–I/O15 Bidirectional data bus 16-bit parallel interface; high-impedance when CE HIGH or OE/BHE/BLE deasserted; supports byte-wide access.
CE Chip Enable Active LOW enable; disables all outputs and reduces current to ISB2 level when HIGH.
OE Output Enable Active LOW control for read data output; must be LOW with CE LOW to drive I/Os.
WE Write Enable Active LOW signal initiating write cycle; latches data on I/O0–I/O15 into addressed location.
BHE Byte High Enable Active LOW control for upper byte (I/O8–I/O15); allows selective 8-bit writes to high byte only.
BLE Byte Low Enable Active LOW control for lower byte (I/O0–I/O7); enables independent 8-bit writes to low byte only.
ERR Error indication output Open-drain output asserted HIGH during successful single-bit ECC correction; requires external pull-up.
VCC / VSS Power / Ground Dual VCC pins (balls C4, D3) and multiple VSS balls (C3, D4, E3, F3, G4) ensure low-noise power delivery and signal integrity.

Key Features

Feature Design Value
Embedded ECC engine Hardware-based single-bit error correction with no CPU overhead; ERR pin signals correction events in real time.
Multi-voltage operation Three discrete VCC ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V) allow reuse across 1.8 V microcontrollers, 3.3 V FPGAs, and legacy 5 V systems.
Byte-selective write control BHE and BLE pins enable independent 8-bit writes without masking logic or additional glue logic.
Low-power standby mode ISB2 = 6 mA typical at 3 V enables extended operation in power-constrained industrial gateways and edge nodes.
1.0 V data retention Guaranteed data hold at 1.0 V supply supports graceful shutdown and brown-out recovery in safety-critical firmware.

Applications

Industrial PLC Memory Buffer Avionics Data Logger

Use Scenario: Storing real-time sensor fusion data and control state snapshots in programmable logic controllers with >10-year field life.

IC Role / Device Role / Timing Role: Primary working memory with ECC-protected word-aligned storage; tAA = 10 ns supports 100 MHz bus timing margins.

Use Value: Prevents silent data corruption in deterministic control loops where undetected memory errors could cause unsafe actuator behavior.

Use Scenario: Capturing flight telemetry (GPS, IMU, engine parameters) in airborne black box recorders subject to cosmic radiation.

IC Role / Device Role / Timing Role: Nonvolatile buffer between ADC/FPGA capture and flash storage; ERR pin triggers scrubbing log on correction event.

Use Value: Reduces FIT rate to <0.1 FIT/Mb (per AN88889), meeting DO-254 DAL-B requirements for fault-tolerant data capture.

Railway Signaling Controller Medical Imaging Subsystem

Use Scenario: Holding configuration tables and diagnostic history in wayside signaling units operating continuously at –40°C to +85°C.

IC Role / Device Role / Timing Role: Dual-rail SRAM interfacing with 3.3 V FPGA and 5 V legacy backplane; BVXI package ensures thermal reliability.

Use Value: Eliminates need for external ECC logic or redundant memory banks, reducing BOM count and board area by 35%.

Use Scenario: Temporary frame buffering in ultrasound beamforming modules where corrupted pixel data causes misdiagnosis.

IC Role / Device Role / Timing Role: High-speed 16-bit interface to DSP core; 10 ns access enables real-time echo processing pipeline.

Use Value: Ensures pixel integrity during acquisition - critical for FDA Class II device certification where memory faults are unacceptable.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61WV25616EDBLL-10MLI No integrated ECC; requires external Hamming logic or processor-based correction; 10 ns access, 256K × 16-bit, 3.3 V only. Lacks hardware ERR signal; increases firmware complexity and latency for error handling. Select only if system already implements software ECC and cost sensitivity outweighs reliability risk.
AS6C4008-10TIN 4-Mbit (512K × 8-bit) SRAM with no ECC; 10 ns access, 2.7–3.6 V; SOJ-32 package. Byte-wide architecture limits bandwidth vs. 16-bit CY7C1041GE; no error detection capability. Use only in non-critical buffering where ECC is handled upstream or omitted entirely.

Compared with IS61WV25616EDBLL-10MLI and AS6C4008-10TIN, CY7C1041GE-10VXI uniquely delivers hardware-accelerated ECC with visible correction feedback (ERR), multi-voltage support, and industrial-grade thermal performance - making it the sole choice for safety-aware, long-lifecycle embedded memory.

Availability

CY7C1041GE-10VXI is available at Aetrix Electronics and suitable for industrial PLCs, avionics data loggers, and railway signaling controllers requiring stable component supply across extended product lifecycles.

Supply support for CY7C1041GE-10VXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-reliability memory portfolio, including automotive-qualified and industrial-grade SRAMs with robust quality systems and global manufacturing.

CY7C1041GE belongs to Cypress's legacy high-speed ECC SRAM product line, designed specifically for mission-critical embedded systems where data integrity, multi-voltage compatibility, and long-term supply stability are mandatory.

FAQ

Does CY7C1041GE-10VXI support automatic write-back after ECC correction?

No. The device performs single-bit error correction during read cycles and asserts the ERR pin, but does not automatically rewrite corrected data to the memory array. External logic or firmware must initiate a write cycle if persistent correction is required. This behavior is explicitly documented in Note 1 of the datasheet.

What is the function of the ERR pin, and how should it be terminated?

The ERR pin is an open-drain output that goes HIGH during successful single-bit ECC correction. It requires an external pull-up resistor (typically 4.7 kΩ to VCC) to generate a valid logic HIGH. It remains LOW during normal reads and uncorrectable errors, providing unambiguous status for diagnostic logging.

Can CY7C1041GE-10VXI operate at 2.5 V supply?

Yes. The device supports the 2.2 V–3.6 V VCC range, and 2.5 V falls within specification. Electrical characteristics (e.g., tAA ≤ 10 ns, ICC ≤ 45 mA) are guaranteed across this full range, with typical values measured at 3.0 V per datasheet Note 4.

How does the BVXI package differ from BVJXI for CY7C1041GE?

BVXI and BVJXI are both 48-ball VFBGA packages, but BVJXI swaps the physical ball positions of I/O[7:0] and I/O[15:8] relative to BVXI. This requires PCB layout revision - they are not pin-compatible. BVXI is used for CY7C1041GE-10VXI; BVJXI appears in alternate ordering codes per datasheet Figure 4.

CY7C1041GE-10VXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
44-BSOJ (0.400", 10.16mm Width)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-SOJ

CY7C1041GE-10VXI FAQ

1.How can I place an order for CY7C1041GE-10VXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1041GE-10VXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1041GE-10VXI reliable?

The price and inventory of CY7C1041GE-10VXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1041GE-10VXI is usually 5 days.

3.What payment methods are accepted for CY7C1041GE-10VXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1041GE-10VXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1041GE-10VXI?

CY7C1041GE-10VXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1041GE-10VXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1041GE-10VXI?

For technical support, including CY7C1041GE-10VXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1041GE-10VXI requirements.

6.How does Aetrix verify that CY7C1041GE-10VXI is sourced from the original manufacturer or authorized distributors?

All CY7C1041GE-10VXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1041GE-10VXI meets industry standards.

7.What is the process for return or replacement of CY7C1041GE-10VXI?

All CY7C1041GE-10VXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1041GE-10VXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1041GE-10VXI part is unused and in its original packaging.

Return procedure for CY7C1041GE-10VXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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