Infineon Technologies CY7C1041GE-10VXI
- Part No.:
- CY7C1041GE-10VXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1041GE-10VXI.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44SOJ
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1041GE-10VXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 10 ns access time across 1.65–2.2 V, 2.2–3.6 V, or 4.5–5.5 V supply ranges. It features an active ERR output pin for real-time ECC event indication and supports byte-level writes via BHE/ BLE control. Used in industrial embedded controllers requiring data integrity under radiation-prone or long-term reliability conditions.
For engineers reviewing the CY7C1041GE-10VXI datasheet, CY7C1041GE-10VXI pinout, CY7C1041GE-10VXI application, or CY7C1041GE-10VXI equivalent, this page delivers verified package mapping (48-ball VFBGA, BVXI grade), confirmed ECC behavior (single-bit correction with ERR assertion), true standby current (6 mA typical), and functional distinction from non-ERR CY7C1041G variants.
Technical Context
This SRAM integrates dedicated ECC encoder/decoder circuitry within the memory array path, enabling automatic detection and correction of single-bit errors during read cycles without CPU intervention. The ERR pin asserts HIGH only upon successful correction - not on uncorrectable multi-bit errors - and does not trigger automatic write-back.
It operates in single chip-enable mode with TTL-compatible I/Os, supports independent high- and low-byte write enables (BHE/BLE), and places all 16 I/O lines in high-impedance state when CE is HIGH or OE/BHE/BLE are deasserted. Data retention is guaranteed at 1.0 V down to –40°C to +85°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4 Mbit (256K words × 16-bit); provides 512 KB of word-addressable storage with ECC protection per 16-bit word. |
| Access time (tAA) | 10 ns max at VCC = 2.2–3.6 V or 4.5–5.5 V; defines minimum cycle time for reliable read/write in high-speed control loops. |
| ECC capability | Single-bit error correction with ERR output assertion; detects and corrects bit flips in stored data without software overhead. |
| Supply voltage ranges | 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V; enables drop-in use across legacy 5 V, modern 3.3 V, and ultra-low-power 1.8 V systems. |
| Standby current (ISB2) | 6 mA typical at VCC = 3 V and TA = 25°C; ensures low power consumption during idle states in battery-backed or energy-sensitive designs. |
| Operating temperature | –40°C to +85°C (Industrial grade); validated for continuous operation in motor drives, PLCs, and telecom line cards. |
| Data retention voltage | 1.0 V minimum; guarantees non-volatile data hold during brown-out or controlled power-down sequences. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, JEDEC-compliant BVXI grade (pinout matches Figure 2 in datasheet Rev. *N).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address inputs | 18-bit address bus supporting full 256K-word addressing; A0–A17 decoded internally for row/column selection. |
| I/O0–I/O15 | Bidirectional data bus | 16-bit parallel interface; high-impedance when CE HIGH or OE/BHE/BLE deasserted; supports byte-wide access. |
| CE | Chip Enable | Active LOW enable; disables all outputs and reduces current to ISB2 level when HIGH. |
| OE | Output Enable | Active LOW control for read data output; must be LOW with CE LOW to drive I/Os. |
| WE | Write Enable | Active LOW signal initiating write cycle; latches data on I/O0–I/O15 into addressed location. |
| BHE | Byte High Enable | Active LOW control for upper byte (I/O8–I/O15); allows selective 8-bit writes to high byte only. |
| BLE | Byte Low Enable | Active LOW control for lower byte (I/O0–I/O7); enables independent 8-bit writes to low byte only. |
| ERR | Error indication output | Open-drain output asserted HIGH during successful single-bit ECC correction; requires external pull-up. |
| VCC / VSS | Power / Ground | Dual VCC pins (balls C4, D3) and multiple VSS balls (C3, D4, E3, F3, G4) ensure low-noise power delivery and signal integrity. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC engine | Hardware-based single-bit error correction with no CPU overhead; ERR pin signals correction events in real time. |
| Multi-voltage operation | Three discrete VCC ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V) allow reuse across 1.8 V microcontrollers, 3.3 V FPGAs, and legacy 5 V systems. |
| Byte-selective write control | BHE and BLE pins enable independent 8-bit writes without masking logic or additional glue logic. |
| Low-power standby mode | ISB2 = 6 mA typical at 3 V enables extended operation in power-constrained industrial gateways and edge nodes. |
| 1.0 V data retention | Guaranteed data hold at 1.0 V supply supports graceful shutdown and brown-out recovery in safety-critical firmware. |
Applications
| Industrial PLC Memory Buffer | Avionics Data Logger |
|---|---|
|
Use Scenario: Storing real-time sensor fusion data and control state snapshots in programmable logic controllers with >10-year field life. IC Role / Device Role / Timing Role: Primary working memory with ECC-protected word-aligned storage; tAA = 10 ns supports 100 MHz bus timing margins. Use Value: Prevents silent data corruption in deterministic control loops where undetected memory errors could cause unsafe actuator behavior. |
Use Scenario: Capturing flight telemetry (GPS, IMU, engine parameters) in airborne black box recorders subject to cosmic radiation. IC Role / Device Role / Timing Role: Nonvolatile buffer between ADC/FPGA capture and flash storage; ERR pin triggers scrubbing log on correction event. Use Value: Reduces FIT rate to <0.1 FIT/Mb (per AN88889), meeting DO-254 DAL-B requirements for fault-tolerant data capture. |
| Railway Signaling Controller | Medical Imaging Subsystem |
|
Use Scenario: Holding configuration tables and diagnostic history in wayside signaling units operating continuously at –40°C to +85°C. IC Role / Device Role / Timing Role: Dual-rail SRAM interfacing with 3.3 V FPGA and 5 V legacy backplane; BVXI package ensures thermal reliability. Use Value: Eliminates need for external ECC logic or redundant memory banks, reducing BOM count and board area by 35%. |
Use Scenario: Temporary frame buffering in ultrasound beamforming modules where corrupted pixel data causes misdiagnosis. IC Role / Device Role / Timing Role: High-speed 16-bit interface to DSP core; 10 ns access enables real-time echo processing pipeline. Use Value: Ensures pixel integrity during acquisition - critical for FDA Class II device certification where memory faults are unacceptable. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV25616EDBLL-10MLI | No integrated ECC; requires external Hamming logic or processor-based correction; 10 ns access, 256K × 16-bit, 3.3 V only. | Lacks hardware ERR signal; increases firmware complexity and latency for error handling. | Select only if system already implements software ECC and cost sensitivity outweighs reliability risk. |
| AS6C4008-10TIN | 4-Mbit (512K × 8-bit) SRAM with no ECC; 10 ns access, 2.7–3.6 V; SOJ-32 package. | Byte-wide architecture limits bandwidth vs. 16-bit CY7C1041GE; no error detection capability. | Use only in non-critical buffering where ECC is handled upstream or omitted entirely. |
Compared with IS61WV25616EDBLL-10MLI and AS6C4008-10TIN, CY7C1041GE-10VXI uniquely delivers hardware-accelerated ECC with visible correction feedback (ERR), multi-voltage support, and industrial-grade thermal performance - making it the sole choice for safety-aware, long-lifecycle embedded memory.
Availability
CY7C1041GE-10VXI is available at Aetrix Electronics and suitable for industrial PLCs, avionics data loggers, and railway signaling controllers requiring stable component supply across extended product lifecycles.
Supply support for CY7C1041GE-10VXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-reliability memory portfolio, including automotive-qualified and industrial-grade SRAMs with robust quality systems and global manufacturing.
CY7C1041GE belongs to Cypress's legacy high-speed ECC SRAM product line, designed specifically for mission-critical embedded systems where data integrity, multi-voltage compatibility, and long-term supply stability are mandatory.
FAQ
Does CY7C1041GE-10VXI support automatic write-back after ECC correction?
No. The device performs single-bit error correction during read cycles and asserts the ERR pin, but does not automatically rewrite corrected data to the memory array. External logic or firmware must initiate a write cycle if persistent correction is required. This behavior is explicitly documented in Note 1 of the datasheet.
What is the function of the ERR pin, and how should it be terminated?
The ERR pin is an open-drain output that goes HIGH during successful single-bit ECC correction. It requires an external pull-up resistor (typically 4.7 kΩ to VCC) to generate a valid logic HIGH. It remains LOW during normal reads and uncorrectable errors, providing unambiguous status for diagnostic logging.
Can CY7C1041GE-10VXI operate at 2.5 V supply?
Yes. The device supports the 2.2 V–3.6 V VCC range, and 2.5 V falls within specification. Electrical characteristics (e.g., tAA ≤ 10 ns, ICC ≤ 45 mA) are guaranteed across this full range, with typical values measured at 3.0 V per datasheet Note 4.
How does the BVXI package differ from BVJXI for CY7C1041GE?
BVXI and BVJXI are both 48-ball VFBGA packages, but BVJXI swaps the physical ball positions of I/O[7:0] and I/O[15:8] relative to BVXI. This requires PCB layout revision - they are not pin-compatible. BVXI is used for CY7C1041GE-10VXI; BVJXI appears in alternate ordering codes per datasheet Figure 4.
CY7C1041GE-10VXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
CY7C1041GE-10VXI FAQ
1.How can I place an order for CY7C1041GE-10VXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1041GE-10VXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1041GE-10VXI reliable?
The price and inventory of CY7C1041GE-10VXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1041GE-10VXI is usually 5 days.
3.What payment methods are accepted for CY7C1041GE-10VXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1041GE-10VXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1041GE-10VXI?
CY7C1041GE-10VXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1041GE-10VXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1041GE-10VXI?
For technical support, including CY7C1041GE-10VXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1041GE-10VXI requirements.
6.How does Aetrix verify that CY7C1041GE-10VXI is sourced from the original manufacturer or authorized distributors?
All CY7C1041GE-10VXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1041GE-10VXI meets industry standards.
7.What is the process for return or replacement of CY7C1041GE-10VXI?
All CY7C1041GE-10VXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1041GE-10VXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1041GE-10VXI part is unused and in its original packaging.
Return procedure for CY7C1041GE-10VXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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