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Infineon Technologies CY7C1041GE-10VXIT
- Part No.:
- CY7C1041GE-10VXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1041GE-10VXIT.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:3,257
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Product details
Overview
CY7C1041GE-10VXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), TTL-compatible I/Os, ERR output pin for real-time error indication, and 10 ns access time at 3.0 V–3.6 V supply. It operates across three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V) and targets mission-critical memory subsystems in industrial control and avionics data recorders.
For engineers reviewing the CY7C1041GE-10VXIT datasheet, CY7C1041GE-10VXIT pinout, CY7C1041GE-10VXIT application, or CY7C1041GE-10VXIT equivalent, key selection criteria include ECC-enabled reliability, multi-voltage support, ERR signal behavior, and 48-ball VFBGA (BVJXI) package compatibility with high-density PCB layouts.
Technical Context
This SRAM integrates dedicated ECC encoder/decoder logic adjacent to the memory array, enabling on-the-fly single-bit error correction during read cycles without CPU intervention. The ERR pin asserts HIGH only upon successful detection and correction of a single-bit error - no automatic write-back is performed.
It supports byte-level writes via independent BHE (I/O8–I/O15) and BLE (I/O0–I/O7) controls, and places all 16 I/Os in high-impedance state when CE is HIGH or OE/BHE/BLE are deasserted. Timing is defined by tAA (10 ns max at 3.0–3.6 V), tCO (7 ns), and tOE (7 ns).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (256K words × 16-bit); provides compact, wide-data bus interface for microcontroller co-processor buffers. |
| Access Time (tAA) | 10 ns maximum at VCC = 3.0–3.6 V; enables direct interfacing with 100 MHz synchronous controllers without wait states. |
| ECC Function | Embedded single-bit error correction with ERR output assertion; detects and corrects bit flips in stored data without software overhead. |
| Supply Voltage Ranges | 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V; allows drop-in replacement across legacy 5 V, modern 3.3 V, and ultra-low-power 1.8 V systems. |
| Active Current (ICC) | 38 mA typical at f = 100 MHz, VCC = 3 V; supports low-power operation in battery-backed or thermally constrained modules. |
| Standby Current (ISB2) | 6 mA typical at VCC = 3 V, CE > VCC – 0.2 V; enables energy-efficient retention mode during system sleep. |
| Data Retention | 1.0 V minimum VCC; maintains valid data with ultra-low standby bias, critical for backup power domains. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, JEDEC-compliant BVJXI footprint (I/O[7:0] and I/O[15:8] ball positions swapped vs. BVXI).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word addressing; A0–A17 directly map to memory location index. |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel data path; split into upper (I/O8–I/O15) and lower (I/O0–I/O7) bytes for selective write control. |
| CE | Chip Enable | Active-Low global enable; disables all outputs and reduces current to ISB2 level when HIGH. |
| OE | Output Enable | Active-Low read strobe; gates data onto I/O bus only when CE and OE are both LOW. |
| WE | Write Enable | Active-Low write strobe; initiates write cycle when CE and WE are LOW with valid address and data. |
| BHE / BLE | Byte Enable Controls | BHE enables writes to I/O8–I/O15; BLE enables writes to I/O0–I/O7; supports 8-bit sub-word access. |
| ERR | Error Indication Output | Open-drain output asserted HIGH only when single-bit error is detected and corrected during a read cycle. |
| VCC / VSS | Power / Ground | Dual VCC pins (balls C4, D3) and dual VSS pins (balls C5, D6) reduce IR drop and improve noise immunity. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC with ERR output | Hardware-accelerated single-bit correction with dedicated status pin eliminates need for external ECC logic or firmware polling. |
| Multi-voltage operation | Three independent VCC ranges allow reuse across 1.8 V, 3.3 V, and 5 V platforms without redesigning power delivery. |
| Low-power standby mode | 6 mA typical ISB2 at 3 V enables >10-year data retention in battery-backed applications with minimal leakage drain. |
| TTL-compatible I/O levels | VIH/VIL thresholds match legacy 5 V TTL and LVTTL logic families, simplifying integration with older microcontrollers and FPGAs. |
| JEDEC VFBGA (BVJXI) | 48-ball 0.5 mm pitch package supports high-density routing and automated reflow assembly with IPC Class 3 reliability. |
Applications
| Industrial PLC Memory Buffer | Avionics Flight Data Recorder |
|---|---|
|
Use Scenario: Real-time logging of sensor inputs and actuator commands in programmable logic controllers operating at –40 °C to +85 °C. IC Role / Device Role / Timing Role: Primary non-refreshing data buffer with ECC protection against cosmic-ray-induced bit flips in unshielded environments. Use Value: ERR pin alerts controller firmware of corrected errors, enabling diagnostic logging without interrupting deterministic scan cycles. |
Use Scenario: Storing timestamped flight parameters (altitude, attitude, engine metrics) in certified airborne recording systems. IC Role / Device Role / Timing Role: High-reliability scratchpad memory interfaced to ARINC 429 or MIL-STD-1553 bus controllers. Use Value: 10 ns access time meets hard real-time latency budgets; 1.0 V data retention ensures integrity during brownout events. |
| Railway Signaling Controller | Medical Imaging Data Cache |
|
Use Scenario: Storing interlocking logic states and track occupancy data in SIL-4-certified signaling hardware. IC Role / Device Role / Timing Role: Fault-tolerant working memory where uncorrected errors could cause unsafe state transitions. Use Value: SER FIT rate <0.1 FIT/Mb (per AN88889) satisfies IEC 62425 safety integrity requirements for fail-safe memory. |
Use Scenario: Temporary storage of DICOM image tiles during CT/MRI reconstruction pipelines before DRAM transfer. IC Role / Device Role / Timing Role: Low-latency, error-resilient cache between FPGA-based image processors and DDR3 memory controllers. Use Value: Byte-enable (BHE/BLE) support enables partial tile writes, reducing bandwidth pressure on downstream memory interfaces. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV25616EDBLL-10MLI | No integrated ECC; requires external error-checking logic or software-based Hamming code implementation. | Lacks hardware ERR signal; unsuitable for safety-critical systems requiring autonomous error reporting. | Select only if cost sensitivity outweighs ECC autonomy and FIT-rate compliance needs. |
| Microchip 23LCV1024-I/P | Serial SPI interface (not parallel); 1 Mbit density; no built-in ECC (requires host-side correction). | Higher latency due to serial protocol; incompatible with parallel-bus microcontrollers or ASICs. | Choose only for space-constrained designs where board area savings justify serial interface trade-offs. |
Compared with IS61WV25616EDBLL-10MLI and 23LCV1024-I/P, CY7C1041GE-10VXIT delivers deterministic, zero-software-overhead ECC correction with parallel bus timing - essential for functional safety and real-time determinism in industrial and aerospace systems.
Availability
CY7C1041GE-10VXIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, avionics flight data recorders, railway signaling controllers, and medical imaging data caches requiring stable component supply across extended temperature and voltage ranges.
Supply support for CY7C1041GE-10VXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.
CY7C1041GE-10VXIT belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for high-reliability, ECC-enabled parallel memory applications in harsh-environment industrial and transportation systems.
FAQ
Does CY7C1041GE-10VXIT support automatic error correction write-back?
No. The device performs single-bit error correction during read cycles and asserts the ERR pin, but does not automatically rewrite the corrected data back to the memory array. External logic or firmware must initiate any write-back operation if persistent correction is required.
What is the function of the ERR pin during normal (error-free) operation?
During error-free reads, the ERR pin remains in high-impedance state (open-drain, pulled up externally). It only drives HIGH for the duration of the read cycle in which a single-bit error is detected and corrected - it does not latch or assert continuously.
Can CY7C1041GE-10VXIT operate at 2.5 V supply?
No. The device supports only three discrete VCC ranges: 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V. Operation at 2.5 V falls outside all specified ranges and violates DC electrical characteristics; reliable functionality is not guaranteed.
Is the 48-ball VFBGA (BVJXI) package RoHS-compliant and lead-free?
Yes. The CY7C1041GE-10VXIT is explicitly marked Pb-free in the datasheet and complies with RoHS Directive 2011/65/EU. The BVJXI package uses matte tin surface finish on solder balls and meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL3).
CY7C1041GE-10VXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
CY7C1041GE-10VXIT FAQ
1.How can I place an order for CY7C1041GE-10VXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1041GE-10VXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1041GE-10VXIT reliable?
The price and inventory of CY7C1041GE-10VXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1041GE-10VXIT is usually 5 days.
3.What payment methods are accepted for CY7C1041GE-10VXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1041GE-10VXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1041GE-10VXIT?
CY7C1041GE-10VXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1041GE-10VXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1041GE-10VXIT?
For technical support, including CY7C1041GE-10VXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1041GE-10VXIT requirements.
6.How does Aetrix verify that CY7C1041GE-10VXIT is sourced from the original manufacturer or authorized distributors?
All CY7C1041GE-10VXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1041GE-10VXIT meets industry standards.
7.What is the process for return or replacement of CY7C1041GE-10VXIT?
All CY7C1041GE-10VXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1041GE-10VXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1041GE-10VXIT part is unused and in its original packaging.
Return procedure for CY7C1041GE-10VXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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