Infineon Technologies CY7C1041GE30-10BVXIT

Overview

CY7C1041GE30-10BVXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 10 ns access time over 2.2 V–3.6 V supply, featuring dedicated ERR output pin, TTL-compatible I/Os, and low standby current (6 mA typical). It serves as fault-tolerant memory in industrial control modules requiring data integrity during extended operation.

For engineers reviewing the CY7C1041GE30-10BVXIT datasheet, CY7C1041GE30-10BVXIT pinout, CY7C1041GE30-10BVXIT application, or CY7C1041GE30-10BVXIT equivalent, this page delivers verified package mapping (48-ball VFBGA, BVXI), ECC correction behavior, byte-enable write control (BHE/ BLE), and voltage-range-specific timing margins - all confirmed from Infineon's official Rev. *N datasheet.

Technical Context

This SRAM implements on-die ECC encoding/decoding logic that detects and corrects single-bit errors during read cycles, signaled via the open-drain ERR pin asserted HIGH. The memory array uses standard row/column decoding with sense amplifiers and supports independent high- and low-byte writes via BHE and BLE control.

It operates across three V_CC ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V); the "30" in the part number specifies the 2.2–3.6 V range with 10 ns t_AA. All I/Os enter high-impedance state when CE is HIGH or OE/BLE/BHE are deasserted - enabling bus sharing in multi-device systems.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, JEDEC-compliant BVXI footprint (pinout matches Figure 2 in datasheet Rev. *N).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with AS7C34098B-10TIN and IS61WV25616EDBLL-10MLI, CY7C1041GE30-10BVXIT uniquely delivers on-die ECC correction with observable ERR output - reducing system-level validation effort and eliminating external error-handling circuitry required by alternatives.

Availability

CY7C1041GE30-10BVXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, railway signaling memory, medical diagnostic imaging cache, and avionics data recorder applications requiring stable component supply across extended product lifecycles.

Supply support for CY7C1041GE30-10BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions with ISO 9001 and IATF 16949 certified manufacturing.

CY7C1041GE30-10BVXIT belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for industrial and transportation systems demanding hardware ECC, multi-voltage operation, and long-term supply assurance.

FAQ

Does CY7C1041GE30-10BVXIT support automatic error correction without host intervention?

Yes. The device performs single-bit error detection and correction autonomously during every read cycle using on-die ECC logic. No host processor action is required - corrected data appears on I/O lines, and the ERR pin asserts HIGH to signal the event. It does not perform automatic write-back; corrected data remains in the accessed location until overwritten.

What is the function of the ERR pin, and how should it be interfaced?

The ERR pin is an open-drain output that goes HIGH whenever a single-bit error is detected and corrected during a read access. It requires an external pull-up resistor (typically 4.7 kΩ to V_CC) to generate a valid logic HIGH. This signal can drive an interrupt input or latch for error logging, enabling real-time system diagnostics without polling.

Can CY7C1041GE30-10BVXIT operate at 1.8 V?

No. The "30" suffix denotes the 2.2 V–3.6 V operating range. For 1.65–2.2 V operation, the correct variant is CY7C1041GE18-15BVXIT (15 ns speed grade). Attempting 1.8 V operation on the -30 variant may result in timing violations or functional failure, as t_AA is not characterized below 2.2 V.

How does byte enable (/BHE and /BLE) control work during write operations?

/BHE enables writes to I/O8–I/O15 (upper byte); /BLE enables writes to I/O0–I/O7 (lower byte). Both signals must be LOW for full 16-bit writes. When only one is LOW, only the corresponding byte is updated - preserving the other byte's content. This enables efficient 8-bit microcontroller interfacing and avoids read-modify-write sequences.