Infineon Technologies CY7C1041GE30-10VXI
- Part No.:
- CY7C1041GE30-10VXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1041GE30-10VXI.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44SOJ
- Quantity:
- Payment:

- Shipping:

Inventory:4,179
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1041GE30-10VXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), TTL-compatible I/Os, 10 ns access time at 2.2–3.6 V, and dedicated ERR output pin for real-time error detection/correction - deployed in industrial control memory buffers requiring data integrity under EMI-prone conditions.
For engineers reviewing the CY7C1041GE30-10VXI datasheet, CY7C1041GE30-10VXI pinout, CY7C1041GE30-10VXI application, or CY7C1041GE30-10VXI equivalent, key selection criteria include ECC-enabled reliability, multi-voltage support (2.2–3.6 V), 48-ball VFBGA package compatibility, and ERR pin behavior during read cycles.
Technical Context
The device implements on-die ECC encoding/decoding logic that detects and corrects single-bit errors in real time during read operations, with ERR pin assertion (HIGH) indicating successful correction. It operates in single-chip-enable mode with byte-level write control via BHE/ BLE inputs.
Memory organization is fixed at 256K words × 16 bits, supporting asynchronous random access with independent high/low byte enables. Data retention is guaranteed at 1.0 V, and all I/Os enter high-impedance state when CE is HIGH or OE/BHE/ BLE are deasserted.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (256K × 16-bit) - supports 32 KB of word-wide data storage with ECC overhead managed internally. |
| Access Time (tAA) | 10 ns at 2.2–3.6 V - enables integration into 100 MHz bus systems with minimal wait states. |
| VCC Operating Range | 2.2 V to 3.6 V - compatible with 3.3 V logic domains and mixed-voltage system designs. |
| Active Current (ICC) | 38 mA typical - defines power budget for sustained read/write bursts in real-time controllers. |
| Standby Current (ISB2) | 6 mA typical - determines quiescent power draw during idle periods in battery-backed or low-power modes. |
| ECC Function | Single-bit error correction with ERR output indication - eliminates need for external ECC logic in safety-critical memory subsystems. |
| Data Retention Voltage | 1.0 V - ensures data persistence during brown-out or controlled power-down sequences. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, JEDEC-compliant BVXI grade, Pb-free, industrial temperature range (–40 °C to +85 °C).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus selecting one of 256K memory locations; A0–A17 fully decoded internally. |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; high-impedance when CE HIGH or OE/BHE/ BLE deasserted. |
| CE | Chip Enable | Active-low global enable; disables all outputs and reduces current to ISB2 level when HIGH. |
| OE | Output Enable | Active-low control for data output drivers; used with CE to initiate read cycles. |
| WE | Write Enable | Active-low signal enabling write operation when CE is LOW; latches data on rising edge. |
| BHE | Byte High Enable | Controls write/read of upper byte (I/O8–I/O15); allows 8-bit access without disturbing lower byte. |
| BLE | Byte Low Enable | Controls write/read of lower byte (I/O0–I/O7); enables partial-word transfers in resource-constrained systems. |
| ERR | Error Indication Output | Open-drain output asserted HIGH during single-bit error detection/correction; requires external pull-up. |
| VCC / VSS | Power / Ground | Dual VCC pins improve noise immunity; multiple VSS balls reduce ground bounce in high-speed operation. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC with ERR output | Eliminates external error-handling circuitry and provides immediate feedback on corrected errors without CPU intervention. |
| Multi-voltage operation (2.2–3.6 V) | Supports direct interfacing with 3.3 V microcontrollers and FPGAs without level-shifting components. |
| 10 ns access time at 3.3 V | Enables use in high-throughput data acquisition systems where memory latency directly impacts sampling rate. |
| Low standby current (6 mA typical) | Reduces system-level power consumption during sleep modes in programmable logic controllers and HMI modules. |
| 48-ball VFBGA package | Enables compact PCB layout in space-constrained industrial gateways and motor drive control boards. |
Applications
| Industrial PLC Memory Buffer | Medical Imaging Data Cache |
|---|---|
Use Scenario: Stores real-time I/O status and control registers in programmable logic controllers subject to electrical noise in factory environments. IC Role / Device Role / Timing Role: Asynchronous SRAM buffer with ECC protection ensuring deterministic response to fieldbus interrupts. Use Value: Prevents silent data corruption in control word storage, avoiding unintended actuator activation or safety shutdowns. |
Use Scenario: Temporarily holds uncompressed frame data between image sensor capture and FPGA-based preprocessing in portable ultrasound devices. IC Role / Device Role / Timing Role: Low-latency, error-resilient memory staging point for pixel data before compression or display rendering. Use Value: Maintains diagnostic image fidelity by correcting bit flips induced by radiation or EMI during high-speed data transfer. |
| Railway Signaling Controller | Avionics Display Interface |
Use Scenario: Holds configuration tables and fault logs in wayside signaling units operating in wide-temperature outdoor enclosures. IC Role / Device Role / Timing Role: Nonvolatile-retentive SRAM (1.0 V hold) preserving critical state during brief power interruptions. Use Value: Guarantees continuity of interlocking logic execution after momentary grid dips without requiring backup batteries. |
Use Scenario: Buffers graphics command streams between flight management computer and cockpit display processor in certified avionics systems. IC Role / Device Role / Timing Role: ECC-protected memory node meeting DO-254 functional safety requirements for display data integrity. Use Value: Meets ASIL-B data integrity targets by detecting/correcting single-event upsets without software overhead. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C34098B-10TIN | No integrated ECC; requires external Hamming logic; 10 ns access at 3.3 V; 44-pin TSOP II package. | Lacks real-time ERR indication; increases PCB area and firmware complexity for error handling. | Select only if cost sensitivity outweighs reliability requirements and board space permits external ECC circuitry. |
| IS61WV25616BLL-10MLI | No ECC; 256K × 16-bit; 10 ns access; 48-pin TSOPII; supports 2.2–3.6 V but no ERR pin or error reporting. | Relies on host processor for error detection; unsuitable for autonomous error recovery in safety-critical contexts. | Use where deterministic error correction is not required and host-side CRC or checksum suffices. |
Compared with AS7C34098B-10TIN and IS61WV25616BLL-10MLI, CY7C1041GE30-10VXI uniquely delivers hardware-accelerated ECC with visible error status, reducing firmware validation scope and eliminating external component risk in certified systems.
Availability
CY7C1041GE30-10VXI is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, railway signaling controllers, and avionics display interfaces requiring stable component supply across extended product lifecycles.
Supply support for CY7C1041GE30-10VXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with ISO 9001 and IATF 16949 certification.
This device belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for high-reliability embedded systems demanding on-die ECC, multi-voltage flexibility, and industrial-grade packaging.
FAQ
Does CY7C1041GE30-10VXI support automatic error correction without host intervention?
Yes. The device performs single-bit error correction autonomously during every read cycle using on-die ECC logic. When an error is detected and corrected, the ERR pin asserts HIGH. No host processor action is required for correction - only monitoring of ERR is needed to log events.
What is the function of the ERR pin, and how should it be terminated?
The ERR pin is an open-drain output that goes HIGH when a single-bit error is detected and corrected during a read. It must be externally pulled up to VCC via a 4.7 kΩ resistor. The pin remains LOW during normal operation and does not indicate uncorrectable multi-bit errors.
Can CY7C1041GE30-10VXI operate at 1.8 V?
No. This variant (suffix "30") is rated for 2.2 V to 3.6 V only. The 1.65–2.2 V voltage range applies only to the "18" speed grade (e.g., CY7C1041GE18-15VXI). Operating below 2.2 V may cause timing violations or ECC failure.
Is the 48-ball VFBGA package lead-free and RoHS compliant?
Yes. The BVXI package designation confirms Pb-free construction and full compliance with EU RoHS Directive 2011/65/EU and China RoHS. The device carries the "Pb-free" marking per datasheet specification and Infineon's material declarations.
CY7C1041GE30-10VXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
CY7C1041GE30-10VXI FAQ
1.How can I place an order for CY7C1041GE30-10VXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1041GE30-10VXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1041GE30-10VXI reliable?
The price and inventory of CY7C1041GE30-10VXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1041GE30-10VXI is usually 5 days.
3.What payment methods are accepted for CY7C1041GE30-10VXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1041GE30-10VXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1041GE30-10VXI?
CY7C1041GE30-10VXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1041GE30-10VXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1041GE30-10VXI?
For technical support, including CY7C1041GE30-10VXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1041GE30-10VXI requirements.
6.How does Aetrix verify that CY7C1041GE30-10VXI is sourced from the original manufacturer or authorized distributors?
All CY7C1041GE30-10VXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1041GE30-10VXI meets industry standards.
7.What is the process for return or replacement of CY7C1041GE30-10VXI?
All CY7C1041GE30-10VXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1041GE30-10VXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1041GE30-10VXI part is unused and in its original packaging.
Return procedure for CY7C1041GE30-10VXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1041GE30-10VXI Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

