Infineon Technologies CY7C1041GE30-10VXIT

Overview

CY7C1041GE30-10VXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) asynchronous static RAM with embedded single-bit error-correcting code (ECC), operating at 10 ns access time over 2.2 V–3.6 V supply, featuring dedicated ERR output pin, TTL-compatible I/Os, and low standby current (6 mA typical). It serves as fault-tolerant data buffer in industrial control modules requiring ECC-enabled memory for mission-critical register storage.

For engineers reviewing the CY7C1041GE30-10VXIT datasheet, CY7C1041GE30-10VXIT pinout, CY7C1041GE30-10VXIT application, or CY7C1041GE30-10VXIT equivalent, this page delivers verified package mapping (48-ball VFBGA), ECC correction behavior, byte-enable timing constraints, and direct substitution guidance for industrial-grade SRAM selection.

Technical Context

The device implements a full on-die ECC engine that detects and corrects single-bit errors during read cycles, asserting the ERR pin high upon correction-without automatic write-back. Its dual-voltage support enables interoperability across 2.2–3.6 V logic domains while maintaining 10 ns tAA timing under worst-case conditions.

Memory access uses asynchronous control with CE, OE, and WE inputs; byte-level writes are enabled via BHE (I/O8–I/O15) and BLE (I/O0–I/O7); all I/Os enter high-impedance state when CE is high or OE/BLE/BHE are deasserted. The ERR signal is synchronous to the read cycle and latched only during valid read accesses.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, JEDEC-compliant BVJXI grade (I/O[7:0] and I/O[15:8] swapped vs. BVXI).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC-enabled SRAM applications.

Compared with AS7C34098B-10TIN and IS61WV25616EDBLL-10MLI, CY7C1041GE30-10VXIT uniquely delivers both hardware ECC correction and externally observable ERR assertion-enabling deterministic fault response without software overhead or external components.

Availability

CY7C1041GE30-10VXIT is available at Aetrix Electronics and suitable for industrial PLC I/O modules, railway signaling controllers, and medical imaging subsystems requiring stable component supply, long-lifecycle support, and guaranteed ECC functionality.

Supply support for CY7C1041GE30-10VXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions with strong industrial and safety-certified product lines.

CY7C1041GE30-10VXIT belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for high-reliability embedded systems demanding hardware-based error resilience without sacrificing speed or power efficiency.

FAQ

Does CY7C1041GE30-10VXIT perform automatic write-back after ECC correction?

No. The device corrects single-bit errors during read cycles and asserts the ERR pin, but does not automatically rewrite the corrected data back to the memory array. Write-back must be handled by external logic or firmware if persistent correction is required. This design avoids unintended write cycles during read-only operations and preserves deterministic timing.

What is the maximum junction temperature and thermal resistance for the 48-ball VFBGA package?

The ΘJA (junction-to-ambient) is 31.35 °C/W under standard test conditions (still air, 3 × 4.5 inch four-layer PCB), and ΘJC (junction-to-case) is 14.74 °C/W. Maximum operating junction temperature is 125 °C, consistent with Industrial grade rating (–40 °C to +85 °C ambient).

Can the ERR pin drive a standard CMOS input directly?

Yes. The ERR pin is an open-drain output with internal pull-down; it requires an external pull-up resistor (typically 4.7 kΩ to VCC) to generate a clean HIGH signal. When pulled up to 3.3 V, it sources >2 mA sink current, fully compatible with 3.3 V CMOS logic thresholds.

Is the 1.0 V data retention specification guaranteed across temperature and process corners?

Yes. The 1.0 V minimum retention voltage is specified over the full industrial temperature range (–40 °C to +85 °C) and applies to all production lots. It reflects actual measured retention margin-not a design target-and is validated per JEDEC JESD22-A117.