Infineon Technologies CY7C1041GE30-10ZSXI

Overview

CY7C1041GE30-10ZSXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), TTL-compatible I/O, 10 ns access time at 2.2–3.6 V, and dedicated ERR output pin for real-time error detection/correction - deployed in industrial control memory buffers requiring data integrity assurance.

For engineers reviewing the CY7C1041GE30-10ZSXI datasheet, CY7C1041GE30-10ZSXI pinout, CY7C1041GE30-10ZSXI application, or CY7C1041GE30-10ZSXI equivalent, key selection criteria include ECC-enabled reliability, multi-voltage support (2.2–3.6 V), 10 ns speed grade, ERR pin behavior, and 44-pin TSOP II package compatibility with legacy SRAM footprints.

Technical Context

The device implements on-die ECC encoding/decoding logic that detects and corrects single-bit errors during read cycles without automatic write-back. Its memory array uses standard SRAM cell architecture with row/column decoding and sense amplifiers, and supports byte-level writes via independent BHE/ BLE controls for upper/lower 8-bit data lanes.

ERR pin assertion (HIGH) occurs synchronously with valid read data when a single-bit error is detected and corrected; no action is required by the host system beyond monitoring ERR. The device operates across three V_CC ranges, but this variant is specified for 2.2–3.6 V operation with t_AA = 10 ns and typical active current of 38 mA.

Key Specifications

Pinout & Package

Package: 44-pin TSOP II (Type II, 400 mil width), RoHS-compliant, surface-mount, JEDEC MO-141AC standard.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with AS7C34098B-10TIN and IS61WV25616EDBLL-10MLI, CY7C1041GE30-10ZSXI delivers deterministic, pin-level error signaling and zero-software-overhead correction - critical for real-time industrial and safety-certified systems where latency and reliability are co-constrained.

Availability

CY7C1041GE30-10ZSXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical imaging data caches, and railway signaling controllers requiring stable component supply, long-term lifecycle support, and guaranteed ECC functionality.

Supply support for CY7C1041GE30-10ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

CY7C1041GE30-10ZSXI belongs to Infineon's legacy Cypress SRAM product line, designed specifically for high-reliability industrial and embedded systems needing hardware ECC and pin-compatible drop-in replacement for older 16-bit SRAMs.

FAQ

Does CY7C1041GE30-10ZSXI support automatic write-back after ECC correction?

No. The device performs single-bit error correction during read cycles and asserts the ERR pin, but does not automatically rewrite the corrected data back to the memory array. Host firmware must initiate any write-back if persistent correction is required. This behavior is explicitly documented in Note 1 of the datasheet.

What is the function of the ERR pin during normal (error-free) read operations?

During error-free reads, the ERR pin remains LOW (inactive). It only transitions HIGH for the duration of the read data valid window when a single-bit error is both detected and corrected. The pin returns LOW before the next read cycle begins, enabling edge-triggered monitoring in FPGA or microcontroller GPIO.

Can CY7C1041GE30-10ZSXI operate at 1.8 V supply voltage?

No. This variant (suffix "30") is rated for 2.2 V to 3.6 V operation only. A separate speed grade (CY7C1041GE18) supports 1.65–2.2 V. Applying 1.8 V to CY7C1041GE30-10ZSXI violates its specified V_CC min and may result in timing violations or data retention failure.

Is the 44-pin TSOP II package of CY7C1041GE30-10ZSXI pin-compatible with standard 44-pin SRAMs like the AS6C4096?

Pinout differs in byte-enable and error-signaling functions: /BHE and /BLE positions match industry-standard 16-bit SRAMs, but the ERR pin replaces NC on CY7C1041GE30-10ZSXI. Direct replacement requires PCB layout verification and firmware adaptation to monitor ERR instead of ignoring the pin.