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Infineon Technologies CY7C1041GN-10VXI

Part No.:
CY7C1041GN-10VXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-BSOJ (0.400", 10.16mm Width)
Datasheet:
AetrixCY7C1041GN-10VXI.pdf
Description:
IC SRAM 4MBIT PARALLEL 44SOJ
Quantity:
Payment:
Payment
Shipping:
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Inventory:4,740

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Product details

Overview

CY7C1041GN-10VXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) asynchronous CMOS static RAM with 10 ns access time, 1.65–2.2 V / 2.2–3.6 V / 4.5–5.5 V triple-voltage operation, and 48-ball VFBGA (6 × 8 × 1.0 mm) packaging. It supports byte-level writes via BHE/ BLE control, TTL-compatible I/Os, and 1.0-V data retention for low-power hold mode - deployed in industrial embedded controllers requiring deterministic memory access without refresh overhead.

For engineers reviewing the CY7C1041GN-10VXI datasheet, CY7C1041GN-10VXI pinout, CY7C1041GN-10VXI application, or CY7C1041GN-10VXI equivalent, key selection criteria include verified 10 ns tAA timing at 5 V, dual-byte enable architecture, industrial-grade –40°C to +85°C operation, and VFBGA package thermal resistance (θJA = 31.35°C/W), critical for thermally constrained PCB layouts.

Technical Context

This SRAM implements a fully decoded 18-bit address bus (A0–A17) driving a 256K-word × 16-bit memory array with independent high- and low-byte write enables (BHE, BLE). Read/write cycles are controlled by CE, OE, and WE with full TTL-compatible input thresholds and output drive strength across all supported VCC ranges.

It features two standby current modes: ISB1 (15 mA max, TTL inputs) and ISB2 (6 mA typical, CMOS inputs), plus 1.0-V data retention capability enabling ultra-low-power hold states. The device lacks internal refresh logic, relying on external address stability during access - consistent with classic asynchronous SRAM architecture.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 4 Mbit (256K words × 16 bits) - provides 512 KB of fast, non-refreshing storage for real-time firmware buffers or register shadowing.
Access Time (tAA) 10 ns at VCC = 4.5–5.5 V - enables direct interfacing with legacy microcontrollers (e.g., 8051, Motorola 68K) running at ≤100 MHz bus clocks.
VCC Operating Ranges 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V - supports mixed-voltage system integration without level shifters in industrial power domains.
Active Current (ICC) 38 mA typical at f = 100 MHz - defines peak dynamic power draw during sustained burst reads/writes at maximum speed.
Standby Current (ISB2) 6 mA typical with CMOS inputs - sets minimum quiescent power in CE-high sleep mode for battery-backed applications.
Data Retention Voltage 1.0 V minimum - allows memory state preservation during brown-out or controlled power-down sequences without backup capacitors.
Package 48-ball VFBGA (6 × 8 × 1.0 mm, BVXI grade) - delivers superior thermal performance (θJA = 31.35°C/W) vs. TSOP II alternatives in compact industrial modules.

Pinout & Package

48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm body, JEDEC MO-249 compliant, BVXI marking. Pinout validated per Figure 1 (Document 001-95413 Rev. *D, Page 4).

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address Inputs 18-bit address bus selecting one of 256K memory locations; no internal latching - requires stable address during CE/OE/WE assertion.
I/O0–I/O7 Lower-Byte Data I/O Bi-directional 8-bit data path enabled only when BLE = LOW during read/write; high-impedance when deselected or BLE HIGH.
I/O8–I/O15 Upper-Byte Data I/O Bi-directional 8-bit data path enabled only when BHE = LOW; independent of BLE - enables true 8/16-bit flexible bus interfacing.
CE Chip Enable Active-LOW global device select; forces all I/Os into high-Z when HIGH, and enables internal logic only when LOW with valid WE/OE.
WE Write Enable Active-LOW signal initiating write cycle; data latched on rising edge of WE while CE and address are stable and valid.
OE Output Enable Active-LOW control for read operations; outputs driven only when OE = LOW, CE = LOW, and address valid - prevents bus contention.
BLE / BHE Byte Low/High Enable Independent active-LOW controls for lower/upper byte writes; permits partial-word updates without masking logic in host controller.
VCC / VSS Power / Ground Dual VCC pins (B3, E3) and dual VSS pins (C3, D4) provide low-inductance supply routing; decoupling required within 5 mm of each VCC ball.

Key Features

Feature Design Value
Triple-Voltage Operation Supports 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V rails - eliminates need for external voltage translators in multi-rail industrial systems.
Byte-Enable Architecture Dedicated BHE/BLE pins allow independent 8-bit writes to upper/lower memory bytes - reduces host CPU overhead versus full-word masking.
1.0-V Data Retention Maintains stored data at VCC ≥ 1.0 V with ISB2 ≤ 6 mA - enables seamless transition to ultra-low-power hold mode during AC loss or scheduled shutdown.
TTL-Compatible I/O VIH/VIL thresholds match legacy 5-V TTL logic families - ensures direct interface with older microcontrollers and FPGAs without level-shifting circuitry.
VFBGA Thermal Performance θJA = 31.35°C/W (vs. 68.85°C/W for TSOP II) - reduces junction temperature rise by >50% under same power dissipation, improving long-term reliability.

Applications

Industrial PLC I/O Buffering Medical Device Real-Time Data Logging

Use Scenario: Storing sensor acquisition buffers and actuator command queues in programmable logic controllers with deterministic scan-cycle timing.

IC Role / Device Role / Timing Role: Asynchronous SRAM providing zero-wait-state memory access for cyclic data exchange between CPU and fieldbus interface ASICs.

Use Value: 10 ns tAA ensures sub-microsecond read/write latency, meeting <100 µs PLC scan cycle deadlines without DMA arbitration overhead.

Use Scenario: Capturing high-fidelity analog waveforms (ECG, EEG) at 10 kS/s in portable diagnostic equipment with battery life constraints.

IC Role / Device Role / Timing Role: High-reliability buffer memory holding raw samples prior to compression and wireless transmission.

Use Value: 1.0-V data retention enables safe suspend-to-RAM during battery swaps, preserving unsent waveform data without volatile loss.

Ruggedized HMI Display Frame Buffer Avionics Sensor Fusion Preprocessing

Use Scenario: Serving as dual-port frame buffer for sunlight-readable TFT displays in outdoor control panels exposed to –40°C to +85°C ambient.

IC Role / Device Role / Timing Role: Static RAM acting as pixel storage accessed concurrently by display controller (read) and ARM Cortex-M7 (write).

Use Value: Industrial-grade temperature rating and VFBGA package withstand thermal cycling stress better than TSOP alternatives in sealed enclosures.

Use Scenario: Temporarily storing inertial measurement unit (IMU) and GPS timestamp-aligned packets before Kalman filter execution in flight control units.

IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory ensuring bounded latency for time-critical sensor fusion algorithms.

Use Value: No refresh overhead or access jitter - guarantees worst-case 10 ns read latency essential for hard real-time deadline compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS61LV25616AL-10TLI Same density, 10 ns speed, but only 3.3 V operation (3.0–3.6 V); 44-pin TSOP II package; higher θJA (68.85°C/W). Lacks multi-voltage support and VFBGA thermal advantage - suitable only for 3.3-V-only designs with less stringent thermal budgets. Select if board already uses TSOP footprint and 3.3-V rail is fixed; avoid for mixed-voltage or thermally dense layouts.
ON Semiconductor MC14LC5481M10 5 V-only (4.5–5.5 V), 10 ns, 44-pin SOJ; ISB2 = 10 mA typical (vs. 6 mA); no 1.0-V retention mode. No low-voltage operation or data retention below 2.2 V - incompatible with brown-out hold requirements. Acceptable only for legacy 5-V systems where power-down retention is not required and SOJ rework is acceptable.

Compared with IS61LV25616AL-10TLI and MC14LC5481M10, CY7C1041GN-10VXI uniquely combines triple-voltage compatibility, 1.0-V data retention, and VFBGA thermal efficiency - making it the sole choice for new industrial designs demanding voltage flexibility and thermal resilience.

Availability

CY7C1041GN-10VXI is available at Aetrix Electronics and suitable for industrial PLCs, medical data loggers, and ruggedized HMIs requiring stable component supply across extended temperature and multi-rail voltage environments.

Supply support for CY7C1041GN-10VXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its broad portfolio of high-reliability memory, microcontrollers, and analog ICs for industrial, automotive, and IoT applications.

CY7C1041GN belongs to Cypress's legacy asynchronous SRAM product line, engineered specifically for deterministic, low-latency memory interfacing in real-time embedded systems where refresh-free operation and voltage flexibility are mandatory.

FAQ

What voltage ranges does CY7C1041GN-10VXI support, and how are they selected?

CY7C1041GN-10VXI operates across three disjoint VCC ranges: 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V. No configuration pins or registers are involved - the device auto-adapts based solely on applied VCC voltage. Each range has distinct DC/AC specifications (e.g., ISB2 = 6 mA typical only in 4.5–5.5 V mode), and mixing voltages across pins is prohibited.

Does CY7C1041GN-10VXI require an external clock or refresh signal?

No. CY7C1041GN-10VXI is a fully asynchronous SRAM with no clock input. Memory access is controlled solely by CE, OE, WE, BHE, and BLE timing - all defined by setup/hold relationships relative to address and control edges. There is no refresh circuitry or periodic maintenance requirement.

How does the byte-enable functionality work during write operations?

BLE (active-LOW) enables writes only to I/O0–I/O7 (lower byte); BHE (active-LOW) enables writes only to I/O8–I/O15 (upper byte). Both may be asserted simultaneously for full 16-bit writes. When either is HIGH, its corresponding byte lines remain unchanged - enabling partial-word updates without host-side masking logic or read-modify-write cycles.

Can CY7C1041GN-10VXI retain data at 1.0 V while fully powered down?

Yes - at VCC ≥ 1.0 V and CE held HIGH, the device enters data retention mode with ISB2 ≤ 6 mA typical. This is not full power-down: VCC must remain applied, but the core array remains powered. True zero-VCC retention is not supported; external backup power or supercapacitor hold-up is required for complete power loss scenarios.

CY7C1041GN-10VXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
44-BSOJ (0.400", 10.16mm Width)
Packaging:
Tube
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-SOJ

CY7C1041GN-10VXI FAQ

1.How can I place an order for CY7C1041GN-10VXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1041GN-10VXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1041GN-10VXI reliable?

The price and inventory of CY7C1041GN-10VXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1041GN-10VXI is usually 5 days.

3.What payment methods are accepted for CY7C1041GN-10VXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1041GN-10VXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1041GN-10VXI?

CY7C1041GN-10VXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1041GN-10VXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1041GN-10VXI?

For technical support, including CY7C1041GN-10VXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1041GN-10VXI requirements.

6.How does Aetrix verify that CY7C1041GN-10VXI is sourced from the original manufacturer or authorized distributors?

All CY7C1041GN-10VXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1041GN-10VXI meets industry standards.

7.What is the process for return or replacement of CY7C1041GN-10VXI?

All CY7C1041GN-10VXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1041GN-10VXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1041GN-10VXI part is unused and in its original packaging.

Return procedure for CY7C1041GN-10VXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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