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Infineon Technologies CY7C1041GN-10VXIT
- Part No.:
- CY7C1041GN-10VXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1041GN-10VXIT.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:4,905
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Product details
Overview
CY7C1041GN-10VXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) asynchronous CMOS static RAM with 10 ns access time, TTL-compatible I/Os, and triple-voltage operation (1.65–2.2 V / 2.2–3.6 V / 4.5–5.5 V). It supports byte-level writes via BHE/ BLE control and delivers 38 mA typical active current and 6 mA typical standby current. Used in industrial embedded controllers requiring fast, low-power, non-refresh memory for real-time data buffering.
For engineers reviewing the CY7C1041GN-10VXIT datasheet, CY7C1041GN-10VXIT pinout, CY7C1041GN-10VXIT application, or CY7C1041GN-10VXIT equivalent, key selection criteria include verified 10 ns tAA timing at 5 V, VFBGA-48 package compatibility, byte-enable write granularity, and industrial-grade –40°C to +85°C operation with 1.0 V data retention capability.
Technical Context
This SRAM implements a fully decoded 18-bit address bus (A0–A17) for 256K-word addressing and a 16-bit bidirectional I/O bus (I/O0–I/O15) with independent high-byte (BHE) and low-byte (BLE) write enables. Control logic uses active-low CE, OE, and WE signals with defined high-impedance behavior on I/Os during deselection or deasserted enable states.
It operates across three distinct VCC ranges without external level-shifting: 1.65–2.2 V (15 ns speed grade), 2.2–3.6 V (10 ns), and 4.5–5.5 V (10 ns). Data retention is guaranteed at 1.0 V with ISB2 ≤ 8 mA, enabling ultra-low-power hold modes in battery-backed systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 4 Mbit (256K words × 16 bits) - provides 512 KB of fast, random-access storage without refresh circuitry |
| Access Time (tAA) | 10 ns at VCC = 4.5–5.5 V - enables direct interfacing with legacy microcontrollers and FPGAs running at ≤100 MHz |
| Supply Voltage Ranges | 1.65–2.2 V / 2.2–3.6 V / 4.5–5.5 V - supports mixed-voltage system integration and legacy 5 V designs |
| Active Current (ICC) | 38 mA typical at f = 100 MHz - enables thermal management in compact industrial modules |
| Standby Current (ISB2) | 6 mA typical at VCC = 5 V, CE > VCC − 0.2 V - reduces power in sleep modes while retaining full data integrity |
| Data Retention Voltage | 1.0 V minimum - allows operation from backup coin-cell sources during main power loss |
| I/O Interface | TTL-compatible inputs/outputs - eliminates need for level translators when interfacing with 5 V logic families |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, JEDEC-compliant (BVXI/BVJXI variants). Pinout validated per Figure 1 and Figure 2 in datasheet 001-95413 Rev. *D.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word decoding; no external address latching required |
| I/O0–I/O7 | Lower-Byte Bidirectional Data | Controlled by BLE; enables 8-bit writes/reads without disturbing upper byte |
| I/O8–I/O15 | Upper-Byte Bidirectional Data | Controlled by BHE; supports independent 8-bit access to high-order word half |
| CE | Chip Enable | Active-low global device select; places all I/Os in high-Z when HIGH |
| OE | Output Enable | Active-low read strobe; enables output drivers only when CE is also LOW |
| WE | Write Enable | Active-low write strobe; initiates write cycle with CE and byte enables |
| BLE | Byte Low Enable | Active-low control for I/O0–I/O7; allows partial-word writes in 8-bit systems |
| BHE | Byte High Enable | Active-low control for I/O8–I/O15; enables selective update of upper data byte |
Key Features
| Feature | Design Value |
|---|---|
| Triple-Voltage Operation | Single part supports 1.8 V, 3.3 V, and 5 V system rails - eliminates BOM splits for voltage-tiered designs |
| Byte-Enable Write Architecture | Independent BHE/BLE control enables true 8-bit sub-word writes - critical for 8-bit MCU coexistence and memory-mapped peripheral registers |
| 1.0 V Data Retention | Guaranteed data hold at 1.0 V supply - enables seamless transition to battery backup without data loss |
| TTL-Compatible I/Os | VIH/VIL thresholds match standard 5 V TTL logic - removes need for external translators in legacy interfaces |
| VFBGA-48 Packaging | 6 × 8 mm footprint with 0.5 mm pitch - balances board density and rework feasibility for industrial PCBs |
Applications
| Industrial PLC Data Buffers | Automotive Engine Control Units |
|---|---|
Use Scenario: Real-time sensor data logging and command queueing in programmable logic controllers with deterministic interrupt response. IC Role / Device Role / Timing Role: Asynchronous SRAM providing zero-wait-state memory for CPU instruction/data caching and cyclic buffer storage. Use Value: 10 ns tAA ensures sub-cycle latency for 100 MHz microcontrollers; 6 mA ISB2 extends runtime during brown-out conditions. | Use Scenario: Storing calibrated lookup tables and transient diagnostic logs in engine control units operating across wide temperature ranges. IC Role / Device Role / Timing Role: Non-volatile-retentive fast memory holding critical calibration parameters during ignition-off periods. Use Value: 1.0 V data retention guarantees parameter integrity down to coin-cell backup levels; –40°C to +85°C rating meets AEC-Q100 Grade 2 requirements. |
| Medical Imaging Front-Ends | Test & Measurement Equipment |
Use Scenario: Frame buffering for ultrasound digitizers requiring burst-mode acquisition and real-time processing pipelines. IC Role / Device Role / Timing Role: High-speed dual-port-capable memory (via byte enables) supporting simultaneous capture and analysis streams. Use Value: Independent BHE/BLE allows concurrent 8-bit pixel stream writes and metadata reads without bus contention. | Use Scenario: Waveform capture memory in digital oscilloscopes where deep memory depth must be accessed at maximum sampling rates. IC Role / Device Role / Timing Role: Asynchronous SRAM acting as first-stage acquisition buffer before DDR transfer to host processor. Use Value: 10 ns access time matches 100 MS/s ADC interface timing; VFBGA-48 minimizes trace inductance for signal integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS6C4008-10TIN | 4-Mbit (512K × 8), 10 ns, 2.7–3.6 V only, SOIC-32 package | Single-voltage range; narrower temp range (–20°C to +70°C); no byte enables | Choose for cost-sensitive 8-bit systems where voltage and temperature margins are relaxed |
| IS61LV25616AL-10TLI | 4-Mbit (256K × 16), 10 ns, 3.3 V only, TSOP-44 package | No 5 V or 1.8 V support; lacks 1.0 V data retention; higher ISB2 (12 mA typical) | Prefer for new 3.3 V-only designs where VFBGA is not required and backup retention is handled externally |
Compared with AS6C4008-10TIN and IS61LV25616AL-10TLI, CY7C1041GN-10VXIT uniquely supports triple-voltage operation, 1.0 V data retention, and byte-selectable writes - making it the only option for industrial systems requiring interoperability across legacy 5 V, modern 3.3 V, and ultra-low-power 1.8 V domains.
Availability
CY7C1041GN-10VXIT is available at Aetrix Electronics and suitable for industrial PLC data buffers, automotive engine control units, and medical imaging front-ends requiring stable component supply across extended temperature and voltage ranges.
Supply support for CY7C1041GN-10VXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensors, and memory solutions for industrial, automotive, and IoT applications.
CY7C1041GN-10VXIT belongs to Infineon's legacy Cypress SRAM portfolio, engineered for high-reliability, multi-rail embedded systems where deterministic timing, low-power retention, and long-term supply stability are critical.
FAQ
Is CY7C1041GN-10VXIT pin-compatible with earlier CY7C1041 series variants?
Yes - CY7C1041GN-10VXIT uses the same 48-ball VFBGA (BVXI) footprint and pinout as CY7C1041GN-10ZSXI and CY7C1041GN-10VXI. All control, address, data, and power pins retain identical mapping and electrical behavior per datasheet 001-95413 Rev. *D.
What is the maximum clock frequency supported for continuous read/write cycling?
The device has no internal clock; it is asynchronous. Maximum sustained operation is determined by tCYC (cycle time), specified as 10 ns min for 4.5–5.5 V operation. This supports up to 100 MHz burst transfers when interfaced with appropriate address/data setup/hold timing.
Does CY7C1041GN-10VXIT require external pull-up resistors on control lines?
No - all control inputs (CE, OE, WE, BHE, BLE) have TTL-compatible thresholds and internal input clamps. External pull-ups are unnecessary unless system-level noise immunity or default-high idle states are required by the host controller design.
Can this SRAM be used in a 1.8 V system with 10 ns access time?
No - at 1.65–2.2 V, the speed grade is 15 ns (CY7C1041GN18 variant). The -10 suffix indicates guaranteed 10 ns performance only at 2.2–3.6 V and 4.5–5.5 V. For 1.8 V operation with 10 ns timing, a different part number or technology is required.
CY7C1041GN-10VXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
CY7C1041GN-10VXIT FAQ
1.How can I place an order for CY7C1041GN-10VXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1041GN-10VXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1041GN-10VXIT reliable?
The price and inventory of CY7C1041GN-10VXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1041GN-10VXIT is usually 5 days.
3.What payment methods are accepted for CY7C1041GN-10VXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1041GN-10VXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1041GN-10VXIT?
CY7C1041GN-10VXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1041GN-10VXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1041GN-10VXIT?
For technical support, including CY7C1041GN-10VXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1041GN-10VXIT requirements.
6.How does Aetrix verify that CY7C1041GN-10VXIT is sourced from the original manufacturer or authorized distributors?
All CY7C1041GN-10VXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1041GN-10VXIT meets industry standards.
7.What is the process for return or replacement of CY7C1041GN-10VXIT?
All CY7C1041GN-10VXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1041GN-10VXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1041GN-10VXIT part is unused and in its original packaging.
Return procedure for CY7C1041GN-10VXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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