Infineon Technologies CY7C1041GN-10ZSXI

Overview

CY7C1041GN-10ZSXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) asynchronous CMOS static RAM with 10 ns access time, 1.65–2.2 V / 2.2–3.6 V / 4.5–5.5 V triple-voltage operation, 38 mA typical active current, and 6 mA typical standby current. It supports byte-level write control via BHE/ BLE and operates across industrial temperature range (–40 °C to +85 °C) in a 48-ball VFBGA package.

For engineers reviewing the CY7C1041GN-10ZSXI datasheet, CY7C1041GN-10ZSXI pinout, CY7C1041GN-10ZSXI application, or CY7C1041GN-10ZSXI equivalent, key selection criteria include voltage-flexible operation, TTL-compatible I/Os, low-power data retention at 1.0 V, and dual-byte enable architecture for efficient memory mapping in legacy and mixed-voltage systems.

Technical Context

This SRAM implements a fully asynchronous interface with independent CE, OE, and WE controls, enabling non-overlapping read/write cycles without clock dependency. Its dual-byte enable (BHE/BLE) logic allows selective upper- or lower-byte writes without external gating, reducing bus contention in 16-bit data paths.

The device features three distinct V_CC operating ranges-1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V-with corresponding timing and current specifications validated per range. Data retention at 1.0 V is supported with automatic CE-driven power-down mode (ISB2 = 6 mA typ), and all I/Os enter high-impedance state when CE is HIGH or OE/BLE/BHE are deasserted.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, JEDEC-compliant (package grade BVXI).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Compared with AS6C4008-10TIN and IS61LV25616AL-10TLI, CY7C1041GN-10ZSXI uniquely supports three discrete V_CC ranges and 1.0 V data retention in a space-efficient VFBGA, making it the only option for compact, mixed-voltage, or ultra-low-retention-voltage designs.

Availability

CY7C1041GN-10ZSXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, automotive instrument cluster display caches, and medical imaging data FIFOs requiring stable component supply across extended temperature and voltage ranges.

Supply support for CY7C1041GN-10ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, security ICs, and memory solutions acquired through its 2020 acquisition of Cypress Semiconductor.

CY7C1041GN-10ZSXI belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for high-reliability, voltage-flexible, asynchronous memory applications in industrial automation, transportation, and medical equipment where pin-compatible longevity and multi-rail interoperability are critical.

FAQ

What voltage ranges does CY7C1041GN-10ZSXI support, and how do they affect timing?

CY7C1041GN-10ZSXI supports three non-overlapping V_CC ranges: 1.65–2.2 V (15 ns t_AA), 2.2–3.6 V (10 ns t_AA), and 4.5–5.5 V (10 ns t_AA). Timing parameters are specified separately per range in the datasheet; operation outside these ranges is not guaranteed. The 10 ns rating applies only at 2.2–3.6 V and 4.5–5.5 V, while 1.65–2.2 V operation requires derating to 15 ns.

Does CY7C1041GN-10ZSXI require external pull-up resistors on control pins?

No external pull-ups are required on CE, OE, WE, BHE, or BLE. All control inputs have TTL-compatible thresholds and internal input leakage < ±1 µA, allowing direct connection to microcontroller GPIOs or FPGA I/O banks. Pull-ups may be added only if system-level noise immunity or default-deselected behavior is needed.

Can CY7C1041GN-10ZSXI operate in data retention mode at 1.0 V while maintaining full addressability?

Yes - at V_CC = 1.0 V, the device enters data retention mode with CE held HIGH and all inputs at valid logic levels. Address lines A0–A17 remain functional for retention verification, but no read/write operations are permitted. Data integrity is maintained for ≥200 hours per JEDEC JESD22-A117, with ICCDR ≤ 8 mA.

Is the 48-ball VFBGA (BVXI) package RoHS-compliant and lead-free?

Yes - CY7C1041GN-10ZSXI in the 48-ball VFBGA package is Pb-free and RoHS-compliant, as confirmed in the Infineon ordering information and package diagram documentation. The "Z" in the part number suffix denotes lead-free finish, and the "SXI" grade indicates industrial temperature range and green packaging.