Infineon Technologies CY7C1041GN30-10BVJXI

Overview

CY7C1041GN30-10BVJXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 10 ns access time, 2.2 V–3.6 V operating voltage, 38 mA typical active current, and 6 mA typical standby current in industrial-grade VFBGA packaging. It supports byte-level write control via BHE/ BLE, TTL-compatible I/Os, and 1.0-V data retention - deployed in real-time industrial controllers requiring deterministic memory access.

For engineers reviewing the CY7C1041GN30-10BVJXI datasheet, CY7C1041GN30-10BVJXI pinout, CY7C1041GN30-10BVJXI application, or CY7C1041GN30-10BVJXI equivalent, key selection criteria include VCC range compatibility (2.2–3.6 V), 48-ball VFBGA mechanical fit, byte-enable timing margins, and ISB2 < 8 mA standby compliance for low-power embedded systems.

Technical Context

This SRAM implements asynchronous random-access architecture with independent address decoding (A0–A17), dual-byte write enable (BHE for I/O8–I/O15, BLE for I/O0–I/O7), and three-state output control via CE/OE. All I/Os enter high-impedance state when CE is HIGH or OE/BLE/BHE are deasserted.

It operates across three VCC ranges but the CY7C1041GN30 variant is specifically characterized at 2.2–3.6 V with tAA = 10 ns (max), ICC = 45 mA (max), and ISB2 = 8 mA (max) under industrial temperature (–40 °C to +85 °C). Data retention is guaranteed at VCC = 1.0 V with tCDR = 0 ns and tR = 10 ns (VCC > 2.2 V).

Key Specifications

Pinout & Package

48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm body, JEDEC-compliant BVJXI package with ball pitch of 0.5 mm. Pinout follows Figure 2 in datasheet Rev. *D (Page 4), where I/O[7:0] and I/O[15:8] are swapped relative to BVXI.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed SRAM applications.

Compared with IS61WV25616BLL-10MLI and W9825G6JH-10, the CY7C1041GN30-10BVJXI uniquely delivers true asynchronous operation, multi-voltage support, and byte-select capability in a space-constrained VFBGA - making it irreplaceable in legacy bus-based industrial controllers requiring deterministic timing and minimal BOM changes.

Availability

CY7C1041GN30-10BVJXI is available at Aetrix Electronics and suitable for programmable logic controllers, industrial HMIs, railway signaling modules, and medical imaging subsystems requiring stable component supply across extended product lifecycles.

Supply support for CY7C1041GN30-10BVJXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and memory solutions, formed through acquisition of Cypress Semiconductor in 2020.

CY7C1041GN30 belongs to Infineon's legacy Cypress SRAM portfolio, engineered for deterministic, low-latency memory in industrial control and safety-critical embedded systems where refresh-free operation and wide VCC tolerance are mandatory.

FAQ

What is the maximum operating frequency supported by CY7C1041GN30-10BVJXI?

The device has no clock input and operates asynchronously; its maximum usable bus frequency depends on tAA (10 ns), tOH (output hold), and system-level setup/hold timing. At 3.0 V, it reliably supports 80–100 MHz bus clocks with proper PCB layout and termination - confirmed by AC switching characteristics in datasheet Rev. *D, Table 8.

Does CY7C1041GN30-10BVJXI require external refresh circuitry?

No. It is a static RAM (SRAM), not DRAM or SDRAM. Data retention is indefinite as long as VCC remains within specification and CE is asserted during active use. Only during data retention mode (VCC = 1.0 V) is refresh unnecessary - no periodic access or timing constraints apply.

Can BLE and BHE be used simultaneously for full 16-bit writes?

Yes. When both BLE and BHE are LOW, all 16 I/O lines (I/O0–I/O15) are enabled for concurrent write. This is the default condition for full-word writes; the byte enables are optional and used only when writing to one byte while preserving the other.

Is the BVJXI package pin-compatible with BVXI?

No. While both are 48-ball VFBGA, BVJXI swaps the physical ball positions of I/O[7:0] and I/O[15:8] relative to BVXI (per datasheet Note 3, Page 4). Board layout must match the specific package grade - direct substitution without PCB revision will cause data bus inversion.