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Infineon Technologies CY7C1041GN30-10BVJXIT

Part No.:
CY7C1041GN30-10BVJXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-VFBGA
Datasheet:
AetrixCY7C1041GN30-10BVJXIT.pdf
Description:
IC SRAM 4MBIT PARALLEL 48VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,000

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Product details

Overview

CY7C1041GN30-10BVJXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) asynchronous CMOS static RAM with 10 ns access time, 2.2 V–3.6 V supply range, 38 mA typical active current, and 6 mA typical standby current. It supports byte-wide writes via BHE/ BLE control and operates in industrial temperature range (–40 °C to +85 °C) in a 48-ball VFBGA package. It serves as fast on-board data buffer in real-time industrial controllers.

For engineers reviewing the CY7C1041GN30-10BVJXIT datasheet, CY7C1041GN30-10BVJXIT pinout, CY7C1041GN30-10BVJXIT application, or CY7C1041GN30-10BVJXIT equivalent, key selection criteria include VCC compatibility across 2.2–3.6 V, 10 ns tAA timing under industrial conditions, byte-select capability for partial-word writes, and VFBGA thermal resistance (θJA = 31.35 °C/W) for high-density PCB layouts.

Technical Context

This SRAM implements a fully decoded 18-bit address space (A0–A17), supporting 256K word × 16-bit organization with independent high-byte (I/O8–I/O15, controlled by BHE) and low-byte (I/O0–I/O7, controlled by BLE) write enable. Read and write cycles are initiated by CE-low with OE-low (read) or WE-low (write), all TTL-compatible at 3.0 V VCC.

It features dual power-down modes: ISB1 (15 mA, TTL input threshold) and ISB2 (6 mA, CMOS input threshold), triggered by CE-high while maintaining data retention down to 1.0 V. Data retention current ICCDR is specified ≤8 mA at VCC = 1.2 V, with tCDR = 0 ns and recovery time tR = 10 ns above 2.2 V.

Key Specifications

Parameter Value and Actual Design Meaning
Memory size 4 Mbit (256K words × 16 bits) - provides full 16-bit parallel data path without external multiplexing
Access time (tAA) 10 ns at VCC = 3.0 V - enables direct interface with 100 MHz microcontrollers without wait states
Supply voltage 2.2 V to 3.6 V - compatible with 3.3 V logic systems and mixed-voltage FPGA I/O banks
Active current (ICC) 38 mA typical at f = 100 MHz - supports burst-mode operation in real-time data acquisition buffers
Standby current (ISB2) 6 mA typical with CMOS inputs - enables low-power sleep mode in battery-backed industrial HMI modules
Data retention voltage 1.0 V minimum - allows retention during brown-out events without external backup capacitor
Package 48-ball VFBGA (6 × 8 × 1.0 mm, BVJX footprint) - supports high-density routing with 0.5 mm ball pitch

Pinout & Package

48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), JEDEC-compliant BVJX package (6 mm × 8 mm × 1.0 mm, 0.5 mm ball pitch), optimized for thermal performance (θJA = 31.35 °C/W) and board-level reliability in industrial environments.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address inputs 18-bit address bus supporting full 256K-word decoding; no external address latching required
I/O0–I/O7 Lower data byte Bi-directional 8-bit data path enabled only when BLE = LOW; high-impedance when deselected
I/O8–I/O15 Upper data byte Bi-directional 8-bit data path enabled only when BHE = LOW; independent of BLE control
CE Chip Enable Active-low global device select; forces all I/Os to high-Z when HIGH, enabling multi-chip memory expansion
WE Write Enable Active-low write strobe; initiates write cycle only when CE and WE both LOW
OE Output Enable Active-low read strobe; enables output drivers only when CE and OE both LOW
BLE / BHE Byte Low/High Enable Independent write-enable controls for lower/upper bytes; enables 8-bit partial writes without masking logic
VCC / VSS Power / Ground Dual VCC pins (Balls A5, D5) and dual VSS pins (Balls C6, E5) reduce IR drop and improve noise immunity

Key Features

Feature Design Value
10 ns access time at 3.0 V Enables zero-wait-state interfacing with Cortex-M7 or RISC-V cores running at 100 MHz
Byte-select write architecture Eliminates need for external byte-mask logic in 8-bit peripheral interfaces or legacy ISA-style buses
1.0 V data retention Permits uninterrupted memory state hold during 3.3 V rail collapse, critical for fault-logging in PLCs
Low 6 mA ISB2 standby current Reduces system-level quiescent power in always-on edge gateways with periodic sensor polling
VFBGA thermal resistance (θJA = 31.35 °C/W) Supports sustained 100 MHz operation in sealed enclosures without forced air cooling

Applications

Industrial PLC Data Buffer Medical Imaging Frame Store

Use Scenario: Real-time I/O scanning and tag database caching in modular programmable logic controllers.

IC Role / Device Role / Timing Role: Asynchronous SRAM acting as dual-port-accessible scratchpad memory for ladder logic execution engine.

Use Value: 10 ns tAA ensures deterministic scan-cycle timing; byte-write capability reduces bus arbitration overhead during partial register updates.

Use Scenario: Temporary frame storage between image sensor capture and JPEG compression in portable ultrasound devices.

IC Role / Device Role / Timing Role: High-speed parallel buffer accepting 16-bit pixel streams from CMOS image sensors at up to 66.7 MHz.

Use Value: 38 mA ICC supports burst capture without thermal throttling; 1.0 V retention preserves last valid frame during power interruption.

Avionics Display Controller Test Equipment Pattern Generator

Use Scenario: Storing display list instructions and glyph bitmaps in DO-254-certified cockpit displays.

IC Role / Device Role / Timing Role: Non-volatile-cached memory mapped into FPGA's AXI-Lite address space for deterministic GUI rendering.

Use Value: VFBGA package meets IPC-7351B land pattern requirements for aerospace PCBs; ISB2 < 8 mA aids DO-160 Section 22 power budget compliance.

Use Scenario: Holding stimulus patterns for high-speed digital I/O validation in automated test equipment (ATE).

IC Role / Device Role / Timing Role: Static pattern store accessed synchronously by FPGA-based pattern sequencer at 100 MHz clock rate.

Use Value: Dual VCC/VSS pins minimize ground bounce during simultaneous 16-bit output transitions; 48-ball layout simplifies high-speed signal integrity routing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS61WV25616EDBLL-10MLI Same density, 10 ns speed, but 2.5 V–3.6 V VCC range; higher ISB2 = 12 mA; 48-pin TSOP II package Lacks VFBGA option; higher thermal resistance (θJA = 68.85 °C/W) limits use in compact sealed enclosures Select when TSOP II mounting is preferred and board space permits larger footprint with easier rework
ON Semiconductor MC14LC542DW CMOS 256K × 16 SRAM, 12 ns speed, 4.5 V–5.5 V only; TTL-compatible; 28-pin SOIC Requires level-shifting for 3.3 V systems; incompatible with low-voltage industrial rails Only viable for legacy 5 V designs where voltage translation is already implemented

Compared with IS61WV25616EDBLL-10MLI and MC14LC542DW, CY7C1041GN30-10BVJXIT uniquely supports 2.2–3.6 V operation with VFBGA packaging and lowest ISB2, making it optimal for space-constrained, low-power 3.3 V embedded systems requiring deterministic timing.

Availability

CY7C1041GN30-10BVJXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame storage, and avionics display controller applications requiring stable component supply across extended product lifecycles.

Supply support for CY7C1041GN30-10BVJXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions acquired from Cypress Semiconductor.

CY7C1041GN30-10BVJXIT belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for high-reliability, low-latency data buffering in industrial automation and medical electronics where asynchronous timing and voltage flexibility are critical.

FAQ

Is CY7C1041GN30-10BVJXIT pin-compatible with other CY7C1041GN variants?

Yes - all CY7C1041GN variants share identical 48-ball VFBGA pinout (BVJX footprint), including CY7C1041GN18 and CY7C1041GN. The only differences are speed grade (10 ns vs. 15 ns) and VCC range (2.2–3.6 V for GN30 vs. 1.65–2.2 V for GN18). No PCB redesign is needed when upgrading within the same package variant.

What is the maximum operating frequency supported by CY7C1041GN30-10BVJXIT?

The device does not have a clock input and is asynchronous; its maximum usable frequency depends on system timing margins. With tAA = 10 ns and tOH = 5 ns, it supports reliable 100 MHz burst reads/writes when interfaced with microcontrollers or FPGAs meeting setup/hold timing constraints per the datasheet AC switching characteristics table.

Does CY7C1041GN30-10BVJXIT require external decoupling capacitors?

Yes - the datasheet specifies two 0.1 µF ceramic capacitors: one between each VCC pin (Balls A5 and D5) and nearest VSS (Balls C6 and E5), placed within 3 mm of respective balls. This dual-decoupling scheme is mandatory to maintain signal integrity and meet ISB2 current spec under fast switching conditions.

Can CY7C1041GN30-10BVJXIT operate at 2.5 V with guaranteed 10 ns access time?

Yes - the 10 ns tAA specification is guaranteed over the full 2.2 V–3.6 V range, including 2.5 V. Electrical characteristics tables confirm VOH ≥ 2.2 V and VOL ≤ 0.4 V at VCC = 2.5 V, ensuring robust TTL/CMOS compatibility without level shifters in mixed-signal 2.5 V systems.

CY7C1041GN30-10BVJXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-VFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-VFBGA (6x8)

CY7C1041GN30-10BVJXIT FAQ

1.How can I place an order for CY7C1041GN30-10BVJXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1041GN30-10BVJXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1041GN30-10BVJXIT reliable?

The price and inventory of CY7C1041GN30-10BVJXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1041GN30-10BVJXIT is usually 5 days.

3.What payment methods are accepted for CY7C1041GN30-10BVJXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1041GN30-10BVJXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1041GN30-10BVJXIT?

CY7C1041GN30-10BVJXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1041GN30-10BVJXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1041GN30-10BVJXIT?

For technical support, including CY7C1041GN30-10BVJXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1041GN30-10BVJXIT requirements.

6.How does Aetrix verify that CY7C1041GN30-10BVJXIT is sourced from the original manufacturer or authorized distributors?

All CY7C1041GN30-10BVJXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1041GN30-10BVJXIT meets industry standards.

7.What is the process for return or replacement of CY7C1041GN30-10BVJXIT?

All CY7C1041GN30-10BVJXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1041GN30-10BVJXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1041GN30-10BVJXIT part is unused and in its original packaging.

Return procedure for CY7C1041GN30-10BVJXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1041GN30-10BVJXIT Tags

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