Infineon Technologies CY7C1041GN30-10VXI
- Part No.:
- CY7C1041GN30-10VXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1041GN30-10VXI.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44SOJ
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1041GN30-10VXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) asynchronous CMOS static RAM with 10 ns access time, operating across 2.2 V–3.6 V supply range, TTL-compatible I/Os, and low-power standby current of 6 mA typical-designed for high-speed buffer and cache memory in industrial microcontroller systems.
For engineers reviewing the CY7C1041GN30-10VXI datasheet, CY7C1041GN30-10VXI pinout, CY7C1041GN30-10VXI application, or CY7C1041GN30-10VXI equivalent, key selection criteria include verified 10 ns tAA timing at 3.0 V, dual-byte write enable (BHE/ BLE), 48-ball VFBGA (BVXI) package mapping, and data retention at 1.0 V.
Technical Context
This SRAM implements a fully decoded 18-bit address space (A0–A17), supporting independent upper- and lower-byte writes via BHE and BLE control signals. All I/Os enter high-impedance state when CE is HIGH or OE/BLE/BHE are deasserted-enabling clean bus sharing without external isolation.
It operates across three voltage ranges but CY7C1041GN30 specifically targets 2.2 V–3.6 V, where ICC = 38 mA typical at fMAX, ISB2 = 6 mA typical in automatic CE power-down mode, and supports 1.0 V data retention with tCDR = 0 ns and tR = 10 ns (VCC > 2.2 V).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4 Mbit (256K words × 16 bits) - provides 512 KB of parallel-access storage for real-time data buffering |
| Access time (tAA) | 10 ns at VCC = 3.0 V - enables direct interfacing with 100 MHz microcontrollers without wait states |
| Supply voltage range | 2.2 V to 3.6 V - compatible with modern low-voltage logic families and battery-backed industrial systems |
| Active current (ICC) | 38 mA typical at fMAX - supports burst-mode operation in embedded controllers with thermal margin |
| Standby current (ISB2) | 6 mA typical - ensures low quiescent power during sleep modes in always-on edge devices |
| Data retention voltage | 1.0 V - maintains stored contents during brown-out or backup-battery operation |
| Input/output compatibility | TTL-compatible - eliminates level-shifting requirements when interfacing with legacy MCU buses |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, JEDEC MO-276AC (Package ID: BVXI). Pinout validated per Figure 1, Document 001-95413 Rev. *D, Page 4.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address inputs | 18-bit address bus supporting full 256K-word decoding without external latching |
| I/O0–I/O7 | Lower data byte | Driven or read under BLE = LOW; isolated when BLE = HIGH or CE = HIGH |
| I/O8–I/O15 | Upper data byte | Driven or read under BHE = LOW; isolated when BHE = HIGH or CE = HIGH |
| CE | Chip Enable | Active-LOW global device select; forces all I/Os into high-Z when HIGH |
| OE | Output Enable | Active-LOW read strobe; controls output drivers independently of CE and WE |
| WE | Write Enable | Active-LOW write strobe; initiates write cycle when CE and WE both LOW |
| BHE / BLE | Byte High/Low Enable | Independent active-LOW controls for upper/lower byte writes-enables 8-bit subsystem integration |
Key Features
| Feature | Design Value |
|---|---|
| Dual-byte write control | Separate BHE and BLE pins allow selective 8-bit writes without masking or extra logic |
| Multi-voltage support | Validated operation across 2.2 V–3.6 V enables drop-in use in mixed-supply industrial PCBs |
| Low-power data retention | Maintains valid data at 1.0 V with no clock or refresh-critical for battery-backed memory holdover |
| High-impedance I/O control | I/Os automatically tri-state on CE HIGH or OE/BLE deassertion-eliminates need for external bus buffers |
| Pb-free packaging | RoHS-compliant 48-ball VFBGA meets IPC/JEDEC standards for automated SMT assembly |
Applications
| Industrial PLC Data Buffering | Medical Imaging Frame Memory |
|---|---|
|
Use Scenario: Storing real-time sensor acquisition buffers in programmable logic controller backplanes with deterministic latency. IC Role / Device Role / Timing Role: Asynchronous parallel SRAM providing zero-wait-state 10 ns read/write cycles synchronized to PLC scan timing. Use Value: Eliminates FIFO bottlenecks in multi-channel analog input modules by enabling concurrent 16-bit word transfers at 100 MHz bus rates. |
Use Scenario: Holding uncompressed grayscale image frames (e.g., 512×512×16-bit) during real-time DICOM preprocessing in portable ultrasound units. IC Role / Device Role / Timing Role: High-bandwidth frame buffer with byte-select capability for partial pixel region updates without full-frame reload. Use Value: Enables sub-100 µs pixel window extraction using BHE/ BLE, reducing GPU offload latency in resource-constrained edge imaging SoCs. |
| Automotive ADAS Sensor Fusion Hub | Test & Measurement Digital Pattern Memory |
|
Use Scenario: Aggregating timestamped CAN FD and radar echo data streams before fusion algorithm execution in Tier-1 ECU designs. IC Role / Device Role / Timing Role: Dual-port-capable SRAM used as shared scratchpad memory between ARM Cortex-R5 and hardware accelerators. Use Value: Supports simultaneous 8-bit sensor metadata writes (via BLE) and 16-bit raw echo reads (via OE) without arbitration overhead. |
Use Scenario: Storing programmable digital stimulus patterns for boundary-scan test vectors in ATE platforms requiring precise timing alignment. IC Role / Device Role / Timing Role: Deterministic-access memory delivering 10 ns setup/hold margins for 100 MHz pattern clocks. Use Value: Guarantees jitter-free vector delivery to DUT pins by eliminating DRAM refresh interference and pipeline stalls. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 10 ns access, 3.3 V only, 44-pin TSOP II package, no BHE/ BLE - uses single WE for full 16-bit writes | Lacks byte-write granularity; requires external gating for 8-bit subsystems | Select when board layout prioritizes TSOP II footprint and byte-level control is unnecessary |
| AS6C4008-10TIN | 10 ns access, 2.7–3.6 V, 44-pin TSOP II, TTL-compatible, but no 1.0 V data retention | Higher ISB2 (12 mA typical); no guaranteed data hold below 2.2 V | Prefer for cost-sensitive consumer applications where battery backup is not required |
Compared with IS61LV25616AL-10TLI and AS6C4008-10TIN, CY7C1041GN30-10VXI uniquely delivers byte-select write capability, 1.0 V data retention, and VFBGA packaging-making it optimal for space-constrained, battery-resilient industrial designs requiring flexible memory access.
Availability
CY7C1041GN30-10VXI is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame memory, automotive ADAS sensor fusion hubs, and test & measurement digital pattern memory requiring stable component supply across extended temperature and voltage ranges.
Supply support for CY7C1041GN30-10VXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and now owns, manufactures, and supports the full CY7C1041GN product family as part of its industrial and automotive memory portfolio.
CY7C1041GN is part of Infineon's legacy high-speed parallel SRAM line, engineered for deterministic latency, low-voltage operation, and robust data retention in mission-critical embedded systems.
FAQ
Is CY7C1041GN30-10VXI pin-compatible with CY7C1041GN18-15VXI?
No. While both share identical 48-ball VFBGA (BVXI) mechanical footprint, CY7C1041GN18 operates at 1.65–2.2 V with 15 ns tAA and different DC/AC characteristics. Voltage range mismatch and timing divergence prevent direct substitution without system-level validation.
Does CY7C1041GN30-10VXI support true 8-bit interface mode?
Yes. With BLE = LOW and BHE = HIGH, only I/O0–I/O7 are driven or read; with BHE = LOW and BLE = HIGH, only I/O8–I/O15 are active. Both byte lanes operate independently under CE and OE control-enabling native 8-bit peripheral interfacing without glue logic.
What is the maximum junction temperature for continuous operation?
The device is rated for –40 °C to +85 °C ambient temperature. Using θJA = 31.35 °C/W (VFBGA), maximum allowable power dissipation at 85 °C ambient is 1.56 W. At 38 mA ICC and 3.3 V, typical power is 125 mW-well within thermal limits for standard PCB layouts.
Can CY7C1041GN30-10VXI retain data during complete VCC removal?
No. Data retention requires VCC ≥ 1.0 V. If VCC drops below 1.0 V, data is not guaranteed. The device supports retention down to 1.0 V-not zero volts-so a backup capacitor or coin cell must maintain ≥1.0 V during main supply interruption.
CY7C1041GN30-10VXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
CY7C1041GN30-10VXI FAQ
1.How can I place an order for CY7C1041GN30-10VXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1041GN30-10VXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1041GN30-10VXI reliable?
The price and inventory of CY7C1041GN30-10VXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1041GN30-10VXI is usually 5 days.
3.What payment methods are accepted for CY7C1041GN30-10VXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1041GN30-10VXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1041GN30-10VXI?
CY7C1041GN30-10VXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1041GN30-10VXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1041GN30-10VXI?
For technical support, including CY7C1041GN30-10VXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1041GN30-10VXI requirements.
6.How does Aetrix verify that CY7C1041GN30-10VXI is sourced from the original manufacturer or authorized distributors?
All CY7C1041GN30-10VXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1041GN30-10VXI meets industry standards.
7.What is the process for return or replacement of CY7C1041GN30-10VXI?
All CY7C1041GN30-10VXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1041GN30-10VXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1041GN30-10VXI part is unused and in its original packaging.
Return procedure for CY7C1041GN30-10VXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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