Infineon Technologies CY7C1041GN30-10VXIT

Overview

CY7C1041GN30-10VXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) asynchronous CMOS static RAM with 10 ns access time, 2.2 V–3.6 V supply range, 38 mA typical active current, and 6 mA typical standby current. It supports byte-level write control via BHE/ BLE and operates in industrial temperature range (–40 °C to +85 °C) in a 48-ball VFBGA package for high-density embedded memory applications.

For engineers reviewing the CY7C1041GN30-10VXIT datasheet, CY7C1041GN30-10VXIT pinout, CY7C1041GN30-10VXIT application, or CY7C1041GN30-10VXIT equivalent, key selection criteria include TTL-compatible I/Os, 1.0-V data retention capability, dual-voltage operation support, and VFBGA packaging for space-constrained PCB layouts.

Technical Context

This SRAM implements a fully decoded 18-bit address bus (A0–A17) for 256K-word addressing and a 16-bit bidirectional I/O bus (I/O0–I/O15), with independent byte enable logic for upper (BHE) and lower (BLE) byte writes. Control timing relies on asynchronous CE, OE, and WE signals with no internal clock or refresh circuitry.

It features automatic CE-controlled power-down mode (ISB2 = 6 mA typ), 1.0-V data retention at zero clock, and high-impedance I/Os during deselection or disabled output states - enabling seamless integration into bus-shared systems without external isolation.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, JEDEC-compliant (package ID: BVXI).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Compared with AS6C4008-10TIN and IS61LV25616AL-10TLI, CY7C1041GN30-10VXIT uniquely supports 2.2–3.6 V operation, 1.0-V data retention, and VFBGA packaging - making it optimal for space-constrained, multi-rail, or ultra-low-power hold-mode applications.

Availability

CY7C1041GN30-10VXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame storage, and avionics display memory requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1041GN30-10VXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with strong industrial and aerospace qualifications.

CY7C1041GN30-10VXIT belongs to Infineon's legacy Cypress SRAM product line, designed specifically for high-reliability, low-latency, asynchronous memory applications in industrial automation, medical instrumentation, and defense electronics.

FAQ

Is CY7C1041GN30-10VXIT pin-compatible with earlier CY7C1041GN variants in VFBGA?

Yes - CY7C1041GN30-10VXIT uses the same 48-ball VFBGA (BVXI) footprint and pinout as other CY7C1041GN variants in that package, including identical ball assignments for A0–A17, I/O0–I/O15, CE, OE, WE, BHE, BLE, VCC, and VSS. No PCB redesign is needed when migrating within the same package type.

Does this SRAM require external refresh circuitry or clock signals?

No - CY7C1041GN30-10VXIT is a true asynchronous static RAM with no internal clock or refresh requirement. It operates solely on CE, OE, WE, BHE, and BLE control signals, enabling direct connection to microcontroller GPIOs or FPGA logic without timing controller overhead.

What is the maximum supported data rate for sustained burst reads?

With 10 ns access time and no cycle restrictions, sustained burst reads can achieve up to 100 million words per second (100 MW/s) - limited only by external bus timing margins and driver strength. Real-world throughput typically reaches 80–90 MW/s in well-designed 3.3-V FPGA interfaces with matched trace lengths.

Can BHE and BLE be used simultaneously for full 16-bit writes?

Yes - asserting both BHE and BLE LOW while CE and WE are LOW enables full 16-bit parallel writes to I/O0–I/O15. This is the default mode for word-aligned writes and matches standard SRAM bus protocols used in microcontroller and DSP memory interfaces.