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Infineon Technologies CY7C1041GN30-10ZSXI

Part No.:
CY7C1041GN30-10ZSXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY7C1041GN30-10ZSXI.pdf
Description:
IC SRAM 4MBIT PARALLEL 44TSOP II
Quantity:
Payment:
Payment
Shipping:
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Inventory:2,363

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Product details

Overview

CY7C1041GN30-10ZSXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) asynchronous CMOS static RAM with 10 ns access time, 2.2–3.6 V supply operation, 38 mA typical active current, and 6 mA typical standby current. It supports byte-level write control via BHE/ BLE pins and operates across industrial temperature range (–40 °C to +85 °C) in a 44-pin TSOP II package - used in real-time data buffering for industrial PLCs, legacy telecom line cards, and FPGA configuration memory.

For engineers reviewing the CY7C1041GN30-10ZSXI datasheet, CY7C1041GN30-10ZSXI pinout, CY7C1041GN30-10ZSXI application, or CY7C1041GN30-10ZSXI equivalent, key selection criteria include verified 10 ns tAA timing at 3.0 V, dual-byte enable architecture, industrial-grade VCC tolerance (2.2–3.6 V), and compatibility with TTL-level I/O signaling in space-constrained board layouts.

Technical Context

This SRAM implements a fully decoded 18-bit address bus (A0–A17) driving a 256K-word × 16-bit memory array with independent high- and low-byte write enables (BHE/BLE). Read/write cycles are controlled by CE, OE, and WE with full TTL-compatible input thresholds and output drive strength.

It features automatic CE-controlled power-down (ISB2 = 6 mA typ) and retains data at 1.0 V VCC, enabling low-power suspend modes. The device supports three distinct VCC ranges - this variant is specified strictly for 2.2–3.6 V operation with guaranteed 10 ns access at fMAX = 100 MHz.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 256K words × 16 bits = 4 Mbit total storage; supports parallel 16-bit data bus interfacing without external multiplexing.
Access Time (tAA) 10 ns max at VCC = 3.0 V, TA = 85 °C; enables direct interface with 100 MHz microcontrollers and FPGAs without wait states.
Supply Voltage Range 2.2 V to 3.6 V only; not interoperable with 1.8 V or 5 V systems - requires dedicated LDO regulation in mixed-voltage designs.
Active Current (ICC) 38 mA typical at VCC = 3.0 V, f = 100 MHz; defines thermal budget for continuous burst-mode operation in compact enclosures.
Standby Current (ISB2) 6 mA typical when CE > VCC – 0.2 V and inputs held valid; enables low-power retention during processor sleep without external power gating.
Data Retention Voltage 1.0 V minimum; allows system-level power sequencing where core logic shuts down before memory, preserving state during brownout.
I/O Compatibility TTL-compatible inputs and outputs; eliminates level-shifter requirement when interfacing with legacy 3.3 V or 5 V controllers.

Pinout & Package

Package: 44-pin Thin Small Outline Package Type II (TSOP II), JEDEC MO-141AC compliant, body size 12.0 mm × 20.0 mm × 1.2 mm, lead pitch 0.8 mm.

Pin/Terminal Circuit Role Design Meaning
/CE Chip Enable (active-low) Primary device select; places all I/Os in high-impedance state when HIGH, enabling multi-SRAM bus sharing.
/OE Output Enable (active-low) Controls read-data output drivers only; allows CE-driven deselection while maintaining address/data bus integrity during partial reads.
/WE Write Enable (active-low) Initiates write cycle when CE and /WE both LOW; latches address and data on falling edge of /WE.
BHE Byte High Enable Enables write to I/O8–I/O15 only; permits 8-bit peripheral access to upper byte without disturbing lower byte contents.
BLE Byte Low Enable Enables write to I/O0–I/O7 only; supports mixed 8/16-bit data transfers in legacy ISA or CompactPCI subsystems.
A0–A17 Address Inputs 18-bit address bus decoding 256K locations; no internal address latching - requires stable address during entire CE-active window.
I/O0–I/O15 Bi-directional Data Bus 16-bit bidirectional CMOS/TTL-compatible data path; transitions to high-Z within tHZCE (10 ns max) after /CE goes HIGH.

Key Features

Feature Design Value
Dual-byte write control Independent BHE/BLE pins allow atomic 8-bit writes to upper or lower half of 16-bit word - critical for MISRA-compliant firmware updates in safety-critical PLCs.
10 ns access at 3.0 V Guaranteed tAA ≤ 10 ns across full industrial temperature range, enabling deterministic timing closure in real-time motion control loops.
1.0 V data retention Preserves stored configuration or fault logs during main power loss, supporting fail-safe restart without external backup capacitors.
Low ISB2 standby current 6 mA typical at VCC = 3.0 V ensures <15 mW standby power in always-on industrial gateways - meets EN 50178 leakage limits.
TTL-compatible I/O Eliminates need for voltage translators when interfacing with legacy 3.3 V or 5 V microcontrollers (e.g., TI C2000, NXP S32K), reducing BOM count.

Applications

Industrial PLC Data Buffer FPGA Configuration Memory

Use Scenario: Storing real-time I/O scan data between CPU polling cycles in DIN-rail mounted programmable logic controllers.

IC Role / Device Role / Timing Role: Asynchronous 16-bit parallel buffer with deterministic 10 ns read latency and byte-selectable writes for tag-based memory mapping.

Use Value: Enables sub-millisecond scan times under IEC 61131-3 cyclic execution, meeting SIL2 response deadlines without DMA overhead.

Use Scenario: Holding bitstream configuration for Xilinx Spartan-6 or Intel MAX 10 FPGAs during cold-start initialization.

IC Role / Device Role / Timing Role: Non-volatile boot memory accessed via FPGA's parallel slave select interface with CE/OE/WE handshaking.

Use Value: Provides reliable, radiation-tolerant configuration storage with 1.0 V retention - avoids reconfiguration failure during brownout events.

Legacy Telecom Line Card Medical Imaging Frame Buffer

Use Scenario: Temporary packet buffering in E1/T1 framer modules using TI TMS320C64x DSPs with EMIF parallel bus.

IC Role / Device Role / Timing Role: High-speed 16-bit data scratchpad supporting burst-mode DMA transfers at 100 MB/s peak bandwidth.

Use Value: Matches DSP EMIF timing without wait states, sustaining full E1 (2.048 Mbps) channel aggregation across 32 time slots.

Use Scenario: Capturing raw grayscale frames from CCD sensors in portable ultrasound devices before JPEG compression.

IC Role / Device Role / Timing Role: Low-latency frame store interfaced to ASIC image pipeline with separate BHE/BLE for pixel-byte alignment.

Use Value: Supports 1024 × 768 @ 30 fps acquisition with zero dropped frames due to guaranteed 10 ns tAA and 6 mA ISB2 thermal stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS6C4008-10TIN 4-Mbit (512K × 8), 10 ns, 2.7–3.6 V only; no BHE/BLE; SOJ-32 package Requires external byte-width adaptation for 16-bit buses; lacks industrial temp support (0–70 °C only) Select only if 8-bit bus architecture is fixed and ambient temperature stays below 70 °C.
IS61LV25616AL-10TLI 4-Mbit (256K × 16), 10 ns, 3.3 V ±10%; ISB = 1 µA (vs. 6 mA); 44-pin TSOP II Ultra-low standby power enables battery-backed operation; tighter VCC tolerance restricts use with wide-input DC/DCs Prefer for portable or energy-harvesting systems where ISB < 10 µA is mandatory and 3.0–3.6 V rail is regulated.

Compared with AS6C4008-10TIN and IS61LV25616AL-10TLI, CY7C1041GN30-10ZSXI uniquely supports 2.2–3.6 V operation with byte-enable flexibility and industrial temperature rating - making it the only choice for ruggedized 16-bit bus systems requiring wide-input voltage tolerance and deterministic timing across –40 °C to +85 °C.

Availability

CY7C1041GN30-10ZSXI is available at Aetrix Electronics and suitable for industrial PLCs, FPGA configuration systems, legacy telecom line cards, and medical imaging frame buffers requiring stable component supply across extended product lifecycles.

Supply support for CY7C1041GN30-10ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions with ISO 9001 and IATF 16949 certified manufacturing.

CY7C1041GN30-10ZSXI belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for industrial and telecom applications demanding high-speed, low-power, and wide-VCC asynchronous memory with long-term obsolescence protection.

FAQ

Is CY7C1041GN30-10ZSXI pin-compatible with CY7C1041GN30-10ZSI?

Yes - both share identical 44-pin TSOP II footprint and pinout. The 'X' suffix denotes extended temperature grade (–40 °C to +85 °C), while 'S' indicates standard industrial grade (0 °C to +70 °C); electrical specs and timing are identical within their respective operating ranges.

Can CY7C1041GN30-10ZSXI operate at 1.8 V?

No - this variant is rated exclusively for 2.2 V to 3.6 V operation. Attempting 1.8 V operation violates absolute maximum ratings and results in undefined behavior, including data corruption and increased ICC. Use CY7C1041GN18-15ZSXI for 1.65–2.2 V applications.

What is the maximum clock frequency supported for burst reads?

This is an asynchronous SRAM - it has no internal clock. Maximum effective throughput depends on external controller timing: with 10 ns tAA and 10 ns tOH, sustained 100 MHz bus cycles are achievable when CE/OE/WE setup/hold times are met, yielding up to 160 MB/s peak bandwidth on a 16-bit bus.

Does CY7C1041GN30-10ZSXI support battery backup mode?

Yes - its 1.0 V data retention capability allows connection to a coin-cell or supercapacitor via diode-OR circuit. When main VCC drops below 2.2 V, the device automatically enters retention mode with ISB2 ≤ 8 mA, preserving data for >1 year at room temperature with 10 µF hold-up capacitance.

CY7C1041GN30-10ZSXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

CY7C1041GN30-10ZSXI FAQ

1.How can I place an order for CY7C1041GN30-10ZSXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1041GN30-10ZSXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1041GN30-10ZSXI reliable?

The price and inventory of CY7C1041GN30-10ZSXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1041GN30-10ZSXI is usually 5 days.

3.What payment methods are accepted for CY7C1041GN30-10ZSXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1041GN30-10ZSXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1041GN30-10ZSXI?

CY7C1041GN30-10ZSXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1041GN30-10ZSXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1041GN30-10ZSXI?

For technical support, including CY7C1041GN30-10ZSXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1041GN30-10ZSXI requirements.

6.How does Aetrix verify that CY7C1041GN30-10ZSXI is sourced from the original manufacturer or authorized distributors?

All CY7C1041GN30-10ZSXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1041GN30-10ZSXI meets industry standards.

7.What is the process for return or replacement of CY7C1041GN30-10ZSXI?

All CY7C1041GN30-10ZSXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1041GN30-10ZSXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1041GN30-10ZSXI part is unused and in its original packaging.

Return procedure for CY7C1041GN30-10ZSXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1041GN30-10ZSXI Tags

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