Infineon Technologies CY7C1041GN30-10ZSXIT

Overview

CY7C1041GN30-10ZSXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) asynchronous CMOS static RAM with 10 ns access time, 2.2 V–3.6 V supply operation, 38 mA typical active current, and 6 mA typical standby current. It supports byte-level write control via BHE/ BLE pins and operates in industrial temperature range (–40 °C to +85 °C), deployed in real-time data buffering for industrial PLCs and embedded controllers.

For engineers reviewing the CY7C1041GN30-10ZSXIT datasheet, CY7C1041GN30-10ZSXIT pinout, CY7C1041GN30-10ZSXIT application, or CY7C1041GN30-10ZSXIT equivalent, key selection criteria include VCC range compatibility (2.2–3.6 V), 10 ns tAA timing, byte-enable write architecture, and VFBGA-48 package thermal resistance (θJA = 31.35 °C/W).

Technical Context

This SRAM implements a fully decoded 18-bit address bus (A0–A17) driving a 256K-word × 16-bit memory array with independent high- and low-byte I/O paths. Read/write operations are controlled by TTL-compatible CE, OE, WE, BHE, and BLE signals with defined setup/hold timing relative to address and control edges.

It features dual power-down modes: ISB1 (TTL input logic) and ISB2 (CMOS input logic), with ISB2 = 6 mA typical at VCC = 3 V. Data retention is guaranteed at 1.0 V with tCDR = 0 ns and tR = 10 ns (VCC > 2.2 V), enabling low-power suspend states in battery-backed systems.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, JEDEC-compliant BVXI footprint (ball pitch = 0.5 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Compared with IS61WV25616EDBLL-10MLI and R1LV25616AS-10SI, CY7C1041GN30-10ZSXIT delivers superior thermal performance (θJA = 31.35 °C/W) and lowest standby current (6 mA), making it optimal for space-constrained, battery-sensitive industrial edge nodes requiring sustained high-speed access.

Availability

CY7C1041GN30-10ZSXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, automotive ADAS sensor cache, and medical imaging front-end applications requiring stable component supply across extended product lifecycles.

Supply support for CY7C1041GN30-10ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT markets.

CY7C1041GN30-10ZSXIT belongs to Infineon's legacy Cypress SRAM portfolio, engineered for high-reliability, low-latency parallel memory interfacing in deterministic real-time systems where refresh-free operation and precise timing control are critical.

FAQ

What is the maximum clock frequency supported for burst reads?

This is an asynchronous SRAM-no internal clock is used. Data access is governed solely by tAA (10 ns), tOH (output hold time), and address/control setup/hold times. Maximum effective throughput depends on external controller timing margins, but sustained 100 MHz bus operation is verified per ICC test conditions in the datasheet.

Does CY7C1041GN30-10ZSXIT support partial writes without read-modify-write cycles?

Yes. The dedicated BHE (byte high enable) and BLE (byte low enable) pins allow independent write access to upper (I/O8–I/O15) or lower (I/O0–I/O7) bytes. When only one byte enable is asserted LOW with WE and CE, only that 8-bit segment is updated-no prior read is required.

Can this SRAM retain data during complete power removal?

No. Data retention requires minimum VCC ≥ 1.0 V. If main power drops below 1.0 V, data is lost unless a backup source (e.g., supercapacitor or coin cell) maintains VCC above threshold. The device does not include non-volatile storage or on-chip EEPROM.

Is the VFBGA-48 package RoHS and REACH compliant?

Yes. The CY7C1041GN30-10ZSXIT is Pb-free and complies with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Full compliance documentation, including substance declarations and test reports, is available via Infineon's Product Change Notification portal.