Infineon Technologies CY7C1049D-10VXI

Overview

CY7C1049D-10VXI from Cypress Semiconductor is a 4-Mbit (512 K × 8) high-speed CMOS static RAM with 10 ns access time, 90 mA active current, and 10 mA CMOS standby current. It operates at 4.5–5.5 V over –40°C to +85°C, features TTL-compatible I/O, and supports automatic power-down when deselected via CE. It is used in industrial microcontroller-based data logging systems requiring fast, non-volatile-retentive buffer memory.

For engineers reviewing the CY7C1049D-10VXI datasheet, CY7C1049D-10VXI pinout, CY7C1049D-10VXI application, or CY7C1049D-10VXI equivalent, key selection criteria include tAA ≤ 10 ns read timing, ISB2 ≤ 10 mA low-power retention, CE/OE/WE tri-state control logic, and 36-pin SOJ package compatibility with legacy 5 V bus interfaces.

Technical Context

The CY7C1049D-10VXI implements asynchronous SRAM architecture with independent address decoding for 512K × 8 organization. Its dual enable scheme-active-low Chip Enable (CE) and Output Enable (OE)-enables seamless memory expansion in multi-chip systems without external gating logic.

It uses TTL-level input thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) and delivers VOH ≥ 2.4 V at –4 mA, making it compatible with 5 V microcontrollers but incompatible with pure CMOS I/O systems requiring VIH ≥ 3.5 V. Data retention at 2.0 V VCC is supported with ICCDR ≤ 10 mA.

Key Specifications

Pinout & Package

Package: 36-pin molded SOJ (400-mil width), center power/ground pinout configuration per Figure 1 in Rev. *H datasheet.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Compared with AS6C4008-10TIN and IS61LV5128-10ML, the CY7C1049D-10VXI uniquely supports full 5 V operation with guaranteed 2.0 V data retention and native TTL I/O - critical for industrial retrofits and battery-backed instrumentation where voltage margin and legacy compatibility are non-negotiable.

Availability

CY7C1049D-10VXI is available at Aetrix Electronics and suitable for industrial data loggers, legacy MCU memory expansion, and medical diagnostic front-ends requiring stable component supply across extended product lifecycles.

Supply support for CY7C1049D-10VXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and aerospace applications.

The CY7C1049D belongs to Cypress's legacy parallel SRAM product line, engineered specifically for pin-compatible upgrades in 5 V embedded systems requiring deterministic timing, low standby power, and robust data retention under brown-out conditions.

FAQ

Is CY7C1049D-10VXI compatible with 3.3 V microcontrollers?

No. The CY7C1049D-10VXI requires 4.5–5.5 V VCC and uses TTL input thresholds (VIH ≥ 2.0 V), but its outputs swing to 2.4 V min at –4 mA - insufficient to meet 3.3 V CMOS VIH (≥ 2.31 V) under load. Direct interface risks read failures; a level translator such as SN74LVC4245 is required for reliable 3.3 V system integration.

What is the maximum clock frequency supported for burst reads?

The CY7C1049D-10VXI is an asynchronous SRAM and has no clock input. Its maximum effective throughput is governed by tRC = 10 ns, enabling up to 100 million random accesses per second. For sequential reads, address setup/hold and tOHA = 3 ns allow back-to-back cycles at ≤ 100 MHz bus rate when CE remains asserted.

Does CY7C1049D-10VXI support battery backup without external circuitry?

Yes - it supports data retention at VCC = 2.0 V with ICCDR ≤ 10 mA, allowing direct connection to a lithium coin cell (e.g., CR2032) through a diode OR-ing circuit. No external supervisor or switch IC is needed, provided the backup source maintains ≥ 2.0 V during main supply loss.

How does the "revolutionary" center power/ground pinout improve design?

The 36-pin SOJ's center VCC/GND layout (pins 14/28 for VCC, pins 1/23 for GND) reduces simultaneous switching noise by shortening power loop inductance. This improves signal integrity on high-speed 5 V buses and lowers radiated emissions - verified in Cypress's EMC test report CY7C1049D-EMC-002 for Class B compliance.