Infineon Technologies CY7C1049G30-10ZSXI

Overview

CY7C1049G30-10ZSXI from Cypress Semiconductor is a 4-Mbit (512K × 8) CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 10 ns access time over 2.2 V–3.6 V supply, featuring ERR pin for real-time error detection/correction, and packaged in 44-pin TSOP II. It serves as fault-tolerant memory in industrial control modules requiring data integrity under radiation-prone or long-life operation.

For engineers reviewing the CY7C1049G30-10ZSXI datasheet, CY7C1049G30-10ZSXI pinout, CY7C1049G30-10ZSXI application, or CY7C1049G30-10ZSXI equivalent, this page delivers verified timing, ECC behavior, power profiles, package mapping, and functional alternatives - all confirmed against Cypress Document 001-95412 Rev. *F.

Technical Context

This SRAM implements on-die ECC encoding/decoding logic that detects and corrects single-bit errors during read cycles without automatic write-back. The ERR output asserts HIGH only when correction occurs, enabling external logging or system-level recovery decisions.

It supports three V_CC ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V); CY7C1049G30-10ZSXI specifically targets the 2.2–3.6 V range with t_AA = 10 ns and typical active current of 38 mA. Its dual CE option and TTL-compatible I/O simplify integration into legacy and mixed-voltage systems.

Key Specifications

Pinout & Package

Package: 44-pin Thin Small Outline Package Type II (TSOP II), RoHS-compliant, surface-mount, 0.8 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV5128EBLL-10MLI and 23LCV512-I/P, CY7C1049G30-10ZSXI uniquely delivers parallel 10 ns access with on-die ECC - eliminating firmware overhead, reducing BOM count, and meeting stringent FIT-rate targets for safety-critical memory.

Availability

CY7C1049G30-10ZSXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, railway signaling data logs, medical imaging frame stores, and avionics sensor caches requiring stable component supply across extended product lifecycles.

Supply support for CY7C1049G30-10ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and aerospace applications, with emphasis on robustness and longevity.

CY7C1049G30-10ZSXI belongs to the CY7C1049G(E) family of ECC-enhanced SRAMs, engineered specifically for systems where data integrity cannot be compromised by transient faults or long-term wear.

FAQ

Does CY7C1049G30-10ZSXI support automatic error write-back after correction?

No. Per Cypress Document 001-95412 Rev. *F, Note 1, this device performs single-bit error detection and correction during read cycles but does not automatically write corrected data back to the memory array. External logic or firmware must initiate a write cycle to persist the corrected value.

What is the function of the ERR pin, and how should it be terminated?

The ERR pin is an open-drain output that asserts HIGH only when a single-bit error is detected and corrected during a read access. It requires an external pull-up resistor (typically 4.7 kΩ to V_CC) to generate a valid logic HIGH signal readable by monitoring circuitry or microcontroller GPIO.

Can CY7C1049G30-10ZSXI operate at 1.8 V?

No. CY7C1049G30-10ZSXI is rated for the 2.2 V–3.6 V V_CC range only. For 1.8 V operation, the CY7C1049G18-15ZSXI variant (15 ns speed, 1.65–2.2 V range) must be used - it is not pin-compatible due to different timing and voltage specifications.

How many address pins does CY7C1049G30-10ZSXI have, and what is the maximum addressable depth?

It has 19 address pins (A0–A18), enabling full decoding of 2¹⁹ = 524,288 addresses. With an 8-bit data bus, this yields exactly 512K × 8-bit = 4,194,304 bits (4 Mbit) of memory - matching the device's specified capacity without aliasing or gaps.