Infineon Technologies CY7C1049GE30-10ZSXI

Overview

CY7C1049GE30-10ZSXI from Cypress Semiconductor is a 4-Mbit (512K × 8) static RAM with embedded single-bit error-correcting code (ECC), TTL-compatible I/O, and dedicated ERR output pin for real-time error detection/correction. It operates across 2.2 V–3.6 V supply, achieves 10 ns access time (tAA), and supports industrial temperature range (–40 °C to +85 °C). Used in mission-critical embedded controllers where data integrity is enforced at memory level.

For engineers reviewing the CY7C1049GE30-10ZSXI datasheet, CY7C1049GE30-10ZSXI pinout, CY7C1049GE30-10ZSXI application, or CY7C1049GE30-10ZSXI equivalent, this page delivers verified package mapping (44-pin TSOP II), ECC behavior under read cycles, ERR pin timing logic, and validated alternatives for industrial SRAM replacement with error resilience.

Technical Context

The CY7C1049GE30-10ZSXI implements on-die ECC encoding/decoding logic that detects and corrects single-bit errors during every read cycle without requiring external circuitry. Its ERR pin asserts HIGH only when correction occurs - no automatic write-back is performed, preserving deterministic timing.

It supports dual voltage domains: core logic runs at 2.2–3.6 V while maintaining full TTL-compatible input thresholds and 1.0-V data retention capability. The device uses standard asynchronous control signals (CE, OE, WE) and places all eight I/O lines in high-impedance state when deselected or during output disable.

Key Specifications

Pinout & Package

Package: 44-pin Thin Small Outline Package Type II (TSOP II), RoHS-compliant, surface-mountable with 0.8 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with AS6C4008-10TIN and IS61WV5128BLL-10MLI, CY7C1049GE30-10ZSXI uniquely delivers on-die ECC correction with hardware-flagged reporting - enabling certified functional safety compliance without design-level complexity or latency penalties.

Availability

CY7C1049GE30-10ZSXI is available at Aetrix Electronics and suitable for medical imaging controllers, industrial PLCs, railway interlocking units, and avionics data caches requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1049GE30-10ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and aerospace applications.

CY7C1049GE belongs to Cypress's industrial-grade asynchronous SRAM portfolio, engineered specifically for systems demanding hardware-enforced data integrity in harsh electromagnetic environments.

FAQ

Does CY7C1049GE30-10ZSXI perform automatic write-back after ECC correction?

No. The device corrects single-bit errors during read cycles and asserts the ERR pin, but does not rewrite corrected data back to the memory array. This preserves deterministic timing and avoids unintended write cycles during read operations - critical for real-time deterministic systems.

What is the electrical behavior of the ERR pin?

The ERR pin is an open-drain output that drives HIGH only during a read cycle when a single-bit error is detected and corrected. It remains HIGH for the duration of the read access and returns LOW afterward. An external pull-up resistor (typically 4.7 kΩ to VCC) is required for proper logic-level signaling.

Can CY7C1049GE30-10ZSXI operate at 1.8 V?

No. This variant (suffix "30") is rated for 2.2 V–3.6 V operation only. For 1.65 V–2.2 V operation, the CY7C1049GE18-15ZSXI variant must be used. Operating outside the specified VCC range risks data corruption or functional failure and violates the device's qualified operating conditions.

How does the device behave during power brown-out below 1.0 V?

Below 1.0 V, data retention is not guaranteed. The device maintains valid data only down to VCC = 1.0 V; below that threshold, stored bits may decay unpredictably. System designers must ensure backup power or capacitive hold-up sustains VCC ≥ 1.0 V for the required retention period, as defined in the data retention waveform (Figure 5).