My Inquiry
My Account
Infineon Technologies CY7C1049GN-10VXI
- Part No.:
- CY7C1049GN-10VXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 36-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1049GN-10VXI.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 36SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:520
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1049GN-10VXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (512K × 8) asynchronous CMOS static RAM with 10 ns access time, TTL-compatible I/Os, and triple-voltage operation (1.65–2.2 V, 2.2–3.6 V, or 4.5–5.5 V). It delivers 38 mA typical active current and 6 mA typical standby current (ISB2), supporting data retention down to 1.0 V. It is used in industrial embedded controllers requiring fast, low-power, nonvolatile-critical memory buffering.
For engineers reviewing the CY7C1049GN-10VXI datasheet, CY7C1049GN-10VXI pinout, CY7C1049GN-10VXI application, or CY7C1049GN-10VXI equivalent, key selection criteria include verified 10 ns tAA timing across all supported VCC ranges, dual-package availability (36-pin SOJ / 44-pin TSOP II), and guaranteed 1.0 V data retention under industrial temperature conditions (–40 °C to +85 °C).
Technical Context
This SRAM implements a fully asynchronous interface with independent Chip Enable (CE), Output Enable (OE), and Write Enable (WE) controls. Address decoding uses a hierarchical row/column architecture with A0–A18 inputs selecting one of 524,288 locations, while bidirectional I/O0–I/O7 lines handle 8-bit parallel data transfer without external latching.
All I/Os enter high-impedance state when CE is HIGH or OE is deasserted, enabling bus sharing in multi-device systems. The device supports automatic CE power-down modes: ISB2 = 6 mA (CMOS input thresholds) and ISB1 = 15 mA (TTL thresholds), with no clock or refresh circuitry required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 4 Mbit (512K words × 8 bits) - provides byte-wide storage for microcontroller code/data buffers without interleaving. |
| Access Time (tAA) | 10 ns - enables direct interfacing with 100 MHz bus systems without wait states. |
| VCC Operating Ranges | 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V - supports legacy 5 V, modern 3.3 V, and ultra-low-power 1.8 V system domains. |
| Active Current (ICC) | 38 mA typical at f = 100 MHz - defines power budget for continuous read/write bursts in real-time control loops. |
| Standby Current (ISB2) | 6 mA typical - ensures minimal leakage during sleep-mode operation in battery-backed industrial nodes. |
| Data Retention Voltage | 1.0 V - guarantees memory state preservation during brown-out or controlled power-down sequences. |
| I/O Compatibility | TTL-compatible inputs/outputs - eliminates level-shifter requirements when interfacing with legacy MCU GPIOs. |
Pinout & Package
Package: 36-pin Small Outline J-Lead (SOJ), RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus selects one of 524,288 memory locations; no internal address latching. |
| I/O0–I/O7 | Bidirectional Data Lines | 8-bit parallel data path; tri-stated automatically on CE HIGH or OE deassertion. |
| CE | Chip Enable | Active-low global enable; places device in standby (ISB2) when HIGH, enabling multi-SRAM bus sharing. |
| OE | Output Enable | Active-low read control; disables output drivers independently of CE to support read-modify-write cycles. |
| WE | Write Enable | Active-low write strobe; initiates write cycle only when CE and WE are both LOW and valid address/data present. |
| VCC, GND | Power Supply | Dual VCC pins (pins 9 & 28) reduce IR drop; dedicated GND pins (pins 10 & 27) improve noise immunity. |
Key Features
| Feature | Design Value |
|---|---|
| Triple-Voltage Operation | Supports 1.8 V, 3.3 V, and 5 V system integration without external regulators or voltage translators. |
| 10 ns Access Time | Meets timing closure for high-speed microprocessor local memory interfaces without glue logic. |
| 1.0 V Data Retention | Enables reliable memory hold during deep-sleep or backup-battery operation in industrial PLCs. |
| Low Standby Current (6 mA) | Reduces quiescent power in always-on edge devices where memory must remain powered but idle. |
| Pb-Free Packaging | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 3 (MSL3). |
Applications
| Industrial PLC Memory Buffer | Automotive Body Control Module |
|---|---|
Use Scenario: Real-time I/O status logging and firmware parameter caching in programmable logic controllers operating at –40 °C to +85 °C. IC Role / Device Role / Timing Role: Asynchronous byte-wide SRAM providing zero-wait-state scratchpad memory for ARM Cortex-M4-based control engines. Use Value: 10 ns tAA ensures deterministic response to interrupt-driven sensor sampling; 1.0 V retention maintains configuration during 100 ms power interruption. | Use Scenario: Storing door lock actuation history and lighting sequence tables in automotive body electronics modules. IC Role / Device Role / Timing Role: Non-refreshing volatile memory interfaced directly to an 8-bit automotive MCU via parallel bus. Use Value: Triple-voltage support allows reuse across 5 V legacy and 3.3 V next-gen BCM platforms; Pb-free SOJ meets AEC-Q200 stress test requirements. |
| Medical Diagnostic Imaging Buffer | Test & Measurement Equipment FIFO |
Use Scenario: Temporary frame buffering in portable ultrasound units where EMI resilience and thermal stability are critical. IC Role / Device Role / Timing Role: High-reliability SRAM acting as acquisition buffer between ADC front-end and DSP subsystem. Use Value: 38 mA ICC at 100 MHz enables sustained burst reads without thermal throttling; 68.85 °C/W θJA (TSOP II) supports convection-cooled enclosures. | Use Scenario: Capturing high-speed serial protocol traces (e.g., SPI, I²C) in benchtop logic analyzers with real-time display. IC Role / Device Role / Timing Role: Dual-port accessible memory block used as circular FIFO for trace data capture. Use Value: TTL-compatible I/Os simplify interface to FPGA-based capture logic; 36-pin SOJ footprint allows dense PCB layout in compact instrument chassis. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS6C4008-10PCN | 4-Mbit (512K × 8), 10 ns, single 2.7–3.6 V supply only; no 1.8 V or 5 V support. | Limited to 3.3 V systems; lacks industrial-grade data retention below 2.0 V. | Select when board-level voltage rails are fixed at 3.3 V and extended retention is not required. |
| IS61LV5128-10MLI | 4-Mbit (512K × 8), 10 ns, 3.3 V only; higher ICC (45 mA typ) and ISB (12 µA typ) - orders of magnitude lower standby current. | Superior for battery-powered applications; incompatible with 5 V or 1.8 V domains. | Prefer for portable equipment where standby current < 100 µA is mandatory and 3.3 V rail is stable. |
Compared with AS6C4008-10PCN and IS61LV5128-10MLI, CY7C1049GN-10VXI uniquely supports three disjoint VCC ranges and guarantees 1.0 V data retention - making it the only option for designs requiring interoperability across legacy, modern, and ultra-low-power subsystems while maintaining memory integrity during brown-out events.
Availability
CY7C1049GN-10VXI is available at Aetrix Electronics and suitable for industrial PLCs, automotive body control modules, medical imaging buffers, and test equipment requiring stable component supply across extended temperature and voltage ranges.
Supply support for CY7C1049GN-10VXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.
CY7C1049GN belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for industrial and automotive applications demanding wide-voltage tolerance, fast access, and robust data retention under thermal stress.
FAQ
What is the maximum operating frequency supported by CY7C1049GN-10VXI?
The device does not require a clock and operates asynchronously. Its 10 ns access time (tAA) supports bus frequencies up to 100 MHz in burst-read configurations, assuming setup/hold times are met. Maximum toggle rate is limited by tRC (cycle time), specified as 10 ns minimum across all VCC ranges, enabling sustained 100 MHz random access in practice.
Does CY7C1049GN-10VXI support automatic power-down without external control signals?
Yes. When CE is driven HIGH, the device automatically enters standby mode with ISB2 = 6 mA (CMOS input thresholds) or ISB1 = 15 mA (TTL thresholds), depending on applied input voltage levels. No additional control logic or sequencing is needed to achieve low-power retention.
Can CY7C1049GN-10VXI be operated at 2.5 V?
No. The datasheet specifies three non-overlapping VCC ranges: 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V. Operation at 2.5 V falls outside all defined ranges and is not characterized or guaranteed for timing, current, or reliability.
Is the 36-pin SOJ package of CY7C1049GN-10VXI compatible with standard SOJ socket footprints?
Yes. The 36-pin SOJ package conforms to JEDEC MO-050AB mechanical dimensions (body width 10.16 mm, lead pitch 1.27 mm), matching industry-standard sockets for 36-pin SOJ SRAMs. Pin 1 location and lead form comply with JEDEC registration requirements for automated assembly.
CY7C1049GN-10VXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 36-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 36-SOJ
CY7C1049GN-10VXI FAQ
1.How can I place an order for CY7C1049GN-10VXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1049GN-10VXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1049GN-10VXI reliable?
The price and inventory of CY7C1049GN-10VXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1049GN-10VXI is usually 5 days.
3.What payment methods are accepted for CY7C1049GN-10VXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1049GN-10VXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1049GN-10VXI?
CY7C1049GN-10VXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1049GN-10VXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1049GN-10VXI?
For technical support, including CY7C1049GN-10VXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1049GN-10VXI requirements.
6.How does Aetrix verify that CY7C1049GN-10VXI is sourced from the original manufacturer or authorized distributors?
All CY7C1049GN-10VXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1049GN-10VXI meets industry standards.
7.What is the process for return or replacement of CY7C1049GN-10VXI?
All CY7C1049GN-10VXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1049GN-10VXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1049GN-10VXI part is unused and in its original packaging.
Return procedure for CY7C1049GN-10VXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1049GN-10VXI Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
