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Infineon Technologies CY7C1051DV33-10BAXI
- Part No.:
- CY7C1051DV33-10BAXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
CY7C1051DV33-10BAXI.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,094
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Product details
Overview
CY7C1051DV33-10BAXI from Infineon Technologies (formerly Cypress) is a 8-Mbit (512 K × 16) high-speed CMOS static RAM with 10 ns access time, 3.3 V supply, and industrial temperature range (–40 °C to +85 °C). It features TTL-compatible I/O, automatic CE power-down, byte-wide write control via BHE/ BLE, and low active current (110 mA at 100 MHz), used in real-time data buffering for industrial controllers and communication interface modules.
For engineers reviewing the CY7C1051DV33-10BAXI datasheet, CY7C1051DV33-10BAXI pinout, CY7C1051DV33-10BAXI application, or CY7C1051DV33-10BAXI equivalent, key selection criteria include tAA = 10 ns read timing, ISB2 = 20 µA CMOS standby current, dual-byte enable architecture, and FBGA/TSOP II package compatibility for space-constrained embedded memory expansion.
Technical Context
The CY7C1051DV33-10BAXI implements a synchronous, non-volatile-retentive SRAM array organized as 512 K words × 16 bits, with independent byte-enable control (BHE/BLE) enabling selective 8-bit writes without read-modify-write cycles. Its TTL-compatible inputs accept 0.8 V/2.0 V thresholds, and outputs drive ±8 mA under 3.3 V operation.
It supports three power states: active (ICC = 110 mA), automatic CE-controlled standby (ISB1 = 40 mA), and deep retention (ISB2 = 20 µA at VCC = 2.0 V). Address-to-data valid delay (tAA) is guaranteed ≤10 ns across –40 °C to +85 °C with 3.3 V ±0.3 V supply, and output enable propagation (tDOE) is ≤5 ns.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| tAA | ≤10 ns - ensures sub-100 MHz synchronous bus interface without wait states |
| ICC (active) | 110 mA at f = 100 MHz - defines peak power delivery requirement for 3.3 V rail |
| ISB2 (standby) | 20 µA at VCC = 2.0 V - enables battery-backed data retention in low-power modes |
| VCC range | 3.3 V ±0.3 V - requires tight-regulated supply; not compatible with 2.5 V or 5 V systems |
| Operating temp | –40 °C to +85 °C - qualified for industrial-grade control and networking equipment |
| Package | 48-ball FBGA (9 mm × 8 mm, 0.8 mm pitch) - supports high-density PCB layout with center power/ground |
| IO capacitance | 12 pF - limits trace length and fanout on parallel memory buses |
Pinout & Package
Package: 48-ball fine-pitch ball grid array (FBGA), 9 mm × 8 mm body, 0.8 mm ball pitch, RoHS-compliant, with center power (VCC) and ground (VSS) balls for low-inductance supply routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address inputs | 19-bit address bus supporting full 512 K-word addressing; A18 is MSB |
| I/O0–I/O7 | Data bus (low byte) | Bi-directional 8-bit data path enabled when BLE = LOW during read/write |
| I/O8–I/O15 | Data bus (high byte) | Bi-directional 8-bit data path enabled when BHE = LOW during read/write |
| CE | Chip Enable | Active-LOW global select; forces high-Z I/O and auto-standby when HIGH |
| OE | Output Enable | Active-LOW read strobe; controls output drivers independently of CE |
| WE | Write Enable | Active-LOW write strobe; initiates write cycle when CE and WE both LOW |
| BLE / BHE | Byte Low/High Enable | Independent active-LOW enables for 8-bit granularity write masking |
Key Features
| Feature | Design Value |
|---|---|
| Dual byte-write control (BHE/BLE) | Enables 8-bit partial writes without external logic or read-modify-write overhead |
| Automatic CE power-down | Reduces ICC from 110 mA to 20 µA within 12 ns of CE deassertion, eliminating external sleep control |
| TTL-compatible I/O levels | Accepts 0.8 V/2.0 V input thresholds and drives 2.4 V/0.4 V outputs at ±8 mA, interfacing directly with legacy 3.3 V logic |
| 2.0 V data retention | Maintains stored data with VCC reduced to 2.0 V and CE held HIGH, supporting brown-out recovery |
| Low-Z to High-Z transition (tHZOE ≤ 5 ns) | Prevents bus contention during multi-device sharing; meets fast turnaround timing in burst-mode controllers |
Applications
| Industrial PLC Data Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Real-time I/O scan buffering in programmable logic controllers with deterministic 10 ns memory access. IC Role / Device Role / Timing Role: High-speed parallel SRAM providing zero-wait-state data exchange between FPGA-based I/O processors and CPU subsystems. Use Value: Enables 100 MHz bus throughput with tAA = 10 ns and tDOE = 5 ns, eliminating pipeline stalls in cyclic executive firmware. |
Use Scenario: Packet header storage and lookup table caching in carrier-grade Ethernet line cards. IC Role / Device Role / Timing Role: Dual-port-capable SRAM (via OE/WE separation) serving as temporary frame buffer and filter rule cache. Use Value: Byte-enable architecture (BHE/BLE) allows independent 8-bit updates to VLAN tag fields without disturbing adjacent protocol headers. |
| Medical Imaging Frame Store | Automotive ADAS Preprocessing Buffer |
|
Use Scenario: Intermediate pixel data staging between image sensor interface and DSP engine in portable ultrasound devices. IC Role / Device Role / Timing Role: Low-power, high-reliability SRAM retaining critical frame buffers during brief power interruptions. Use Value: 2.0 V data retention mode sustains stored image data for >100 ms during VCC sag, preventing diagnostic data loss. |
Use Scenario: Sensor fusion preprocessing buffer in radar/Ethernet gateway modules operating in automotive under-hood environments. IC Role / Device Role / Timing Role: Industrial-temp SRAM interfacing with ARM Cortex-R5F MCU via 16-bit parallel bus for time-critical CAN-FD message aggregation. Use Value: –40 °C to +85 °C qualification and 28.31 °C/W θJA ensure thermal stability in sealed enclosures without forced airflow. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV51216BLL-10MLI | Same density (512K×16), 10 ns speed, but uses 44-pin TSOP II only; no FBGA option; higher ISB2 = 30 µA | Lacks FBGA footprint; less suitable for high-density routing; identical timing interface | Select when TSOP II mounting is preferred and board area permits larger package |
| Winbond W9825G6JH-10 | SDRAM (not SRAM); requires refresh controller; 10 ns latency only in burst mode; different command protocol | Not drop-in compatible; needs memory controller redesign; lower cost per bit but higher system complexity | Consider only for new designs where SDRAM controller IP is available and cost-per-bit outweighs timing simplicity |
Compared with IS61WV51216BLL-10MLI, CY7C1051DV33-10BAXI offers FBGA packaging for compact layouts and lower standby current; versus W9825G6JH-10, it eliminates refresh overhead and guarantees deterministic 10 ns random-access latency without burst constraints.
Availability
CY7C1051DV33-10BAXI is available at Aetrix Electronics and suitable for industrial PLC data buffering, telecom line card memory, and medical imaging frame store applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant FBGA packaging.
Supply support for CY7C1051DV33-10BAXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, emphasizing reliability, industrial qualification, and long-term supply assurance for mission-critical systems.
The CY7C1051DV33 belongs to Cypress' legacy parallel SRAM product line, designed specifically for deterministic, low-latency data buffering in real-time embedded systems where refresh-free operation and byte-selective writes are essential.
FAQ
Is CY7C1051DV33-10BAXI pin-compatible with CY7C1051DV33-10ZI?
No. CY7C1051DV33-10BAXI uses a 48-ball FBGA package with specific ball map (e.g., VCC on balls A1/A2, A16/A17), while CY7C1051DV33-10ZI is a 44-pin TSOP II device with incompatible pinout and mechanical footprint. Interchange requires PCB redesign and signal re-routing.
Does this SRAM support asynchronous burst reads?
No. The CY7C1051DV33-10BAXI is a true asynchronous SRAM with no internal burst counter or clock input. All accesses are address-driven with tAA ≤10 ns; burst behavior must be implemented externally via address sequencing in the controller.
Can BHE and BLE be asserted simultaneously for full 16-bit operation?
Yes. When both BHE and BLE are LOW, all 16 I/O lines (I/O0–I/O15) are active for simultaneous 16-bit read or write. This is the default mode for full-word transfers and is explicitly supported in the truth table (page 10 of datasheet Rev. *J).
What is the maximum junction temperature during continuous operation?
The absolute maximum junction temperature is +125 °C. With θJA = 28.31 °C/W (FBGA on 4-layer board), sustained 110 mA ICC at 3.3 V yields ~400 mW power dissipation, resulting in ~11.3 °C rise above ambient - well within safe margin at +85 °C ambient.
CY7C1051DV33-10BAXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (6x8)
CY7C1051DV33-10BAXI FAQ
1.How can I place an order for CY7C1051DV33-10BAXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1051DV33-10BAXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1051DV33-10BAXI reliable?
The price and inventory of CY7C1051DV33-10BAXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1051DV33-10BAXI is usually 5 days.
3.What payment methods are accepted for CY7C1051DV33-10BAXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1051DV33-10BAXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1051DV33-10BAXI?
CY7C1051DV33-10BAXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1051DV33-10BAXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1051DV33-10BAXI?
For technical support, including CY7C1051DV33-10BAXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1051DV33-10BAXI requirements.
6.How does Aetrix verify that CY7C1051DV33-10BAXI is sourced from the original manufacturer or authorized distributors?
All CY7C1051DV33-10BAXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1051DV33-10BAXI meets industry standards.
7.What is the process for return or replacement of CY7C1051DV33-10BAXI?
All CY7C1051DV33-10BAXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1051DV33-10BAXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1051DV33-10BAXI part is unused and in its original packaging.
Return procedure for CY7C1051DV33-10BAXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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