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Infineon Technologies CY7C1051DV33-10BAXIT
- Part No.:
- CY7C1051DV33-10BAXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
CY7C1051DV33-10BAXIT.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,716
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Product details
Overview
CY7C1051DV33-10BAXIT from Infineon Technologies (formerly Cypress) is a 8-Mbit (512 K × 16) high-speed CMOS static RAM with 10 ns access time, 3.3 V supply, and industrial temperature range (–40 °C to +85 °C). It features TTL-compatible I/O, automatic CE power-down, byte-wide write enable (BHE/BLE), and dual-package support (48-ball FBGA and 44-pin TSOP II). Used in real-time data buffering for industrial controllers and network packet memory.
For engineers reviewing the CY7C1051DV33-10BAXIT datasheet, CY7C1051DV33-10BAXIT pinout, CY7C1051DV33-10BAXIT application, or CY7C1051DV33-10BAXIT equivalent, key selection criteria include tAA = 10 ns read timing, ISB2 = 20 µA CMOS standby current, 2.0 V data retention capability, and dual-byte enable architecture for flexible 8-bit/16-bit bus interfacing.
Technical Context
The CY7C1051DV33-10BAXIT implements a synchronous, non-volatile-retentive SRAM core organized as 512 K words × 16 bits, with independent Byte HIGH Enable (BHE) and Byte LOW Enable (BLE) inputs enabling selective 8-bit writes to upper or lower data bytes. Address decoding uses 19-bit addressing (A0–A18) supporting full 512 K-word access.
It operates exclusively in asynchronous mode with no clock input; read/write control relies on CE, OE, WE, BHE, and BLE signal combinations. Power management includes two standby modes: ISB1 (TTL-input active power-down) at 40 mA and ISB2 (CMOS-input deep standby) at 20 µA - both triggered automatically upon CE deassertion.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| tAA | 10 ns maximum address-to-data-valid delay - enables direct interface with 100 MHz microcontrollers without wait states. |
| VCC | 3.3 V ± 0.3 V supply - compatible with standard LVTTL and LVCMOS 3.3 V system rails. |
| ICC (active) | 110 mA typical at f = 100 MHz - defines peak dynamic power draw during sustained read/write bursts. |
| ISB2 | 20 µA maximum CMOS standby current - supports ultra-low-power hold mode during system sleep. |
| Data retention VCC | 2.0 V minimum - allows memory state preservation during brown-out or controlled low-power suspend. |
| Package | 48-ball FBGA (6 mm × 8 mm, 0.8 mm pitch) - optimized for high-density PCB layouts with thermal pad grounding. |
| Operating temp | –40 °C to +85 °C industrial grade - validated for use in programmable logic controllers and telecom line cards. |
Pinout & Package
Package: 48-ball fine-pitch ball grid array (FBGA), RoHS-compliant, with exposed thermal pad (ball A1 = VSS, ball B1 = VCC, ball E1 = A18, ball H1 = I/O15).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address inputs | 19-bit address bus supporting full 512 K × 16 memory map; internally decoded for row/column selection. |
| I/O0–I/O7 | Data bus (low byte) | Bi-directional 8-bit data path enabled only when BLE = LOW during read/write; high-impedance when disabled. |
| I/O8–I/O15 | Data bus (high byte) | Bi-directional 8-bit data path enabled only when BHE = LOW; independent of BLE for true byte-select operation. |
| CE | Chip Enable | Active-low global device select; forces automatic power-down and high-Z I/O when HIGH. |
| OE | Output Enable | Active-low read strobe; controls output drivers only - does not affect internal power state. |
| WE | Write Enable | Active-low write strobe; combined with CE LOW to initiate write cycle; overlaps with BHE/BLE for byte masking. |
| BLE / BHE | Byte enable controls | Independent active-low enables for low/high data bytes - enables 8-bit peripheral interfacing on 16-bit bus systems. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-byte write enable (BHE/BLE) | Enables independent 8-bit writes to upper/lower data lanes without external demux logic or bus transceivers. |
| Automatic CE power-down (ISB2 = 20 µA) | Eliminates need for external power-gating circuitry; reduces system standby power by >99% vs. active mode. |
| TTL-compatible I/O levels | Supports direct connection to legacy 3.3 V microcontrollers and FPGAs without level-shifting components. |
| 2.0 V data retention | Preserves memory contents during brown-out events or controlled low-voltage suspend, reducing reboot latency. |
| High-speed 10 ns access (tAA) | Meets timing requirements of ARM9, Cortex-M4, and MIPS-based real-time controllers operating at 100+ MHz. |
Applications
| Industrial PLC Data Buffering | Telecom Packet Memory |
|---|---|
|
Use Scenario: Storing real-time I/O scan data and ladder logic intermediate values in modular PLC backplanes. IC Role / Device Role / Timing Role: Asynchronous 16-bit SRAM buffer interfaced directly to ARM-based motion controller ASICs via parallel bus. Use Value: 10 ns tAA eliminates wait-state insertion, enabling deterministic 100 µs I/O cycle times across 32-slot chassis. |
Use Scenario: Temporary storage of Ethernet frame payloads in Layer-2 switching ASICs before forwarding decision. IC Role / Device Role / Timing Role: High-bandwidth packet buffer with byte-select writes for header modification and CRC recalculation. Use Value: Independent BHE/BLE control allows in-place 8-bit header edits without full 16-bit read-modify-write cycles. |
| Medical Imaging Frame Store | Automotive ADAS Preprocessing Buffer |
|
Use Scenario: Holding uncompressed grayscale image frames (1024 × 768 @ 8-bit) from ultrasound front-end ADCs. IC Role / Device Role / Timing Role: Low-latency parallel memory for FPGA-based pixel pipeline processing with burst read capability. Use Value: 48-ball FBGA package provides compact footprint and thermal performance needed for fanless enclosure designs. |
Use Scenario: Buffering radar point cloud data between 77 GHz RF SoC and vision fusion processor in Tier-1 ECU modules. IC Role / Device Role / Timing Role: Industrial-temp SRAM serving as shared memory between heterogeneous compute domains with strict ASIL-B timing constraints. Use Value: –40 °C to +85 °C rating and 2.0 V data retention ensure reliable operation during cold cranking and engine bay thermal cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV51216BLL-10MLI | Same density (512K × 16), 10 ns speed, but uses 44-pin TSOP II only; no FBGA option; ISB2 = 25 µA. | Lacks FBGA package - unsuitable for space-constrained automotive or medical PCBs requiring fine-pitch routing. | Select when TSOP II mechanical compatibility and legacy board reuse are priorities over thermal performance. |
| Renesas R1EX24052AS0C-10#U0 | 512K × 16, 10 ns, but requires 2.5 V supply; no 3.3 V support; ISB2 = 15 µA; supports battery backup mode. | Not voltage-compatible with 3.3 V systems; requires separate LDO or level-shifting, increasing BOM cost and layout complexity. | Choose only if existing 2.5 V infrastructure exists and battery-backed retention is mandatory. |
Compared with IS61WV51216BLL-10MLI and R1EX24052AS0C-10#U0, the CY7C1051DV33-10BAXIT uniquely combines 3.3 V operation, FBGA packaging, and 20 µA ISB2 in a single industrial-grade part - simplifying thermal design and eliminating voltage translation in modern embedded systems.
Availability
CY7C1051DV33-10BAXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, telecom packet memory, and medical imaging frame store applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant FBGA packaging.
Supply support for CY7C1051DV33-10BAXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor, and memory solutions for industrial, automotive, and communications markets.
The CY7C1051DV33 belongs to Infineon's legacy Cypress parallel SRAM product line, engineered for deterministic, low-latency data buffering in real-time embedded systems where asynchronous access and byte-select flexibility are critical.
FAQ
Is CY7C1051DV33-10BAXIT pin-compatible with earlier CY7C1051DV33 variants?
Yes - the -10BAXIT suffix denotes the 48-ball FBGA package with industrial temperature grade and 10 ns speed grade. Pinout matches the CY7C1051DV33-10BA (same FBGA variant); differences are limited to tape-and-reel packaging and extended traceability markings per Infineon's post-acquisition ordering policy.
Does this SRAM support battery backup or non-volatile retention?
No - the CY7C1051DV33-10BAXIT is a volatile CMOS SRAM. It retains data only while powered above 2.0 V (data retention mode), but lacks integrated EEPROM/NVRAM or battery-switching circuitry. External backup capacitors or supercaps may be used for short-term hold, but no built-in NV functionality exists.
Can BLE and BHE be asserted simultaneously for full 16-bit operation?
Yes - asserting both BLE and BHE LOW enables full 16-bit data transfer on I/O0–I/O15 during read or write cycles. The device treats this as standard 16-bit mode; no timing penalty or functional restriction applies beyond standard AC specifications.
What is the thermal pad connection requirement for the 48-ball FBGA package?
The thermal pad (exposed die attach paddle) must be soldered to a solid copper thermal plane on the PCB, connected to VSS. Per Infineon's package drawing 001-91122, the pad occupies the central 4 × 4 ball region (C3–F6) and requires ≥70% solder coverage for optimal θJA = 28.31 °C/W performance.
CY7C1051DV33-10BAXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (6x8)
CY7C1051DV33-10BAXIT FAQ
1.How can I place an order for CY7C1051DV33-10BAXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1051DV33-10BAXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1051DV33-10BAXIT reliable?
The price and inventory of CY7C1051DV33-10BAXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1051DV33-10BAXIT is usually 5 days.
3.What payment methods are accepted for CY7C1051DV33-10BAXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1051DV33-10BAXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1051DV33-10BAXIT?
CY7C1051DV33-10BAXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1051DV33-10BAXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1051DV33-10BAXIT?
For technical support, including CY7C1051DV33-10BAXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1051DV33-10BAXIT requirements.
6.How does Aetrix verify that CY7C1051DV33-10BAXIT is sourced from the original manufacturer or authorized distributors?
All CY7C1051DV33-10BAXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1051DV33-10BAXIT meets industry standards.
7.What is the process for return or replacement of CY7C1051DV33-10BAXIT?
All CY7C1051DV33-10BAXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1051DV33-10BAXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1051DV33-10BAXIT part is unused and in its original packaging.
Return procedure for CY7C1051DV33-10BAXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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