Infineon Technologies CY7C1051DV33-10ZSXI

Overview

CY7C1051DV33-10ZSXI from Infineon Technologies (formerly Cypress) is a 8-Mbit (512 K × 16) high-speed CMOS static RAM with 10 ns access time, 3.3 V ±0.3 V supply, and industrial temperature range (–40 °C to +85 °C). It features TTL-compatible I/Os, automatic CE power-down, byte-wide write control via BHE/ BLE, and supports memory expansion in embedded controllers and real-time data buffering systems.

For engineers reviewing the CY7C1051DV33-10ZSXI datasheet, CY7C1051DV33-10ZSXI pinout, CY7C1051DV33-10ZSXI application, or CY7C1051DV33-10ZSXI equivalent, key selection criteria include tAA = 10 ns read timing, ISB2 = 20 µA CMOS standby current, dual-byte enable architecture, and FBGA/TSOP II package compatibility for space-constrained PCB layouts.

Technical Context

The device implements a synchronous, non-volatile-retentive SRAM array organized as 512 K words × 16 bits, with independent byte-enable control (BHE for I/O8–I/O15, BLE for I/O0–I/O7) enabling partial-word writes without read-modify-write cycles. Address decoding uses full 19-bit addressing (A0–A18) with no internal multiplexing.

It operates in three power states: active (ICC = 110 mA at 100 MHz), automatic CE-controlled power-down (ISB1 = 40 mA), and ultra-low CMOS standby (ISB2 = 20 µA). Data retention is guaranteed at VCC = 2.0 V, supporting low-power hold modes during system sleep.

Key Specifications

Pinout & Package

Package: 44-pin TSOP II (Type II) with center power/ground pinout - pin-compatible with JEDEC MO-141AC standard. Pin count and layout match industry-standard SRAM footprints for drop-in replacement in legacy designs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Compared with IS61LV51216AL-10MLI, CY7C1051DV33-10ZSXI offers tighter ISB2 (20 µA vs. 25 µA) and native TTL compatibility, while W9825G6JH-10 introduces SDRAM protocol overhead and refresh dependency - making it unsuitable for deterministic real-time buffering.

Availability

CY7C1051DV33-10ZSXI is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame storage, and avionics display controllers requiring stable component supply across multi-year production cycles.

Supply support for CY7C1051DV33-10ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its broad portfolio of memory, microcontroller, and analog products with full technical and supply chain continuity.

This device belongs to Cypress' legacy parallel SRAM product line, designed specifically for high-reliability, low-latency data buffering in industrial automation, medical instrumentation, and aerospace systems where asynchronous access and deterministic timing are critical.

FAQ

Is CY7C1051DV33-10ZSXI pin-compatible with older CY7C1051D variants?

Yes - the -10ZSXI variant retains identical 44-pin TSOP II pinout and electrical characteristics as earlier CY7C1051D speed grades. The 'ZSXI' suffix denotes industrial temperature grade (–40 °C to +85 °C) and Pb-free packaging, with no functional or mechanical changes affecting board-level compatibility.

Does this SRAM require an external clock signal?

No - CY7C1051DV33-10ZSXI is an asynchronous static RAM. All operations are controlled by edge- or level-sensitive control signals (CE, OE, WE, BHE, BLE); no clock input is present or required. Timing is governed solely by setup/hold and access specifications in the datasheet.

Can BHE and BLE be asserted simultaneously for full 16-bit writes?

Yes - asserting both BHE and BLE LOW enables concurrent access to I/O0–I/O15, allowing full 16-bit writes in a single cycle. This configuration matches standard 16-bit bus interfaces and avoids the latency penalty of sequential byte writes.

What is the maximum supported bus frequency when using CE-controlled read cycles?

With tRC = 10 ns minimum read cycle time, the theoretical maximum sustained bus frequency is 100 MHz. However, practical throughput depends on CE assertion timing and address stability - real-world implementations typically achieve 80–90 MHz with proper PCB layout and signal integrity.