Infineon Technologies CY7C1051DV33-10ZSXIT

Overview

CY7C1051DV33-10ZSXIT from Infineon Technologies (formerly Cypress) is a 8-Mbit (512 K × 16) high-speed CMOS static RAM with 10 ns access time, 3.3 V supply, TTL-compatible I/O, and automatic CE-controlled power-down. It supports byte-wide writes via independent BHE/ BLE controls and operates across –40 °C to +85 °C for industrial embedded memory buffering.

For engineers reviewing the CY7C1051DV33-10ZSXIT datasheet, CY7C1051DV33-10ZSXIT pinout, CY7C1051DV33-10ZSXIT application, or CY7C1051DV33-10ZSXIT equivalent, key selection criteria include tAA = 10 ns read timing, ISB2 = 20 µA CMOS standby current, dual-byte enable architecture, and FBGA-48/TSOP-II-44 package compatibility in industrial memory subsystems.

Technical Context

The device implements a synchronous, non-volatile-retentive SRAM array organized as 512 K words × 16 bits, with fully decoded address inputs (A0–A18) and bidirectional I/O0–I/O15 pins. Read/write control relies on three independent enables: CE (chip-level selection), OE (output gating), and WE (write strobe), while BHE and BLE separately gate upper and lower data bytes.

Power management is hardware-automated: when CE is HIGH, the device enters low-power ISB2 mode (20 µA typical) without external sequencing. Data retention is guaranteed down to VCC = 2.0 V, and all inputs/outputs meet TTL voltage thresholds (VIH = 2.0 V min, VOL = 0.4 V max) with 12 pF pin capacitance.

Key Specifications

Pinout & Package

Package: 48-ball fine-pitch ball grid array (FBGA), 0.8 mm pitch, 7.0 mm × 8.0 mm body size, RoHS-compliant, lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Compared with IS61WV51216BLL-10MLI and R1EX25616AS-10JGI, CY7C1051DV33-10ZSXIT uniquely delivers independent BHE/ BLE control and lowest ISB2 (20 µA), making it optimal for energy-constrained, mixed-bus-width industrial designs requiring deterministic byte-granular writes.

Availability

CY7C1051DV33-10ZSXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, automotive ADAS pre-processing cache, and medical imaging frame store applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant FBGA packaging.

Supply support for CY7C1051DV33-10ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and memory solutions, formed through the acquisition of Cypress Semiconductor in 2020.

CY7C1051DV33 belongs to Cypress's legacy parallel SRAM product line, engineered for high-reliability industrial and automotive systems demanding deterministic timing, low-power standby, and robust signal integrity in noisy EMI environments.

FAQ

Is CY7C1051DV33-10ZSXIT pin-compatible with earlier CY7C1051DV33 variants in TSOP-II package?

Yes-CY7C1051DV33-10ZSXIT shares identical pinout and electrical behavior with CY7C1051DV33-10ZSXI (TSOP-II) and CY7C1051DV33-10ZSXI (FBGA), differing only in tape-and-reel packaging and extended temperature screening per Infineon's post-acquisition quality enhancement program.

Does this SRAM support asynchronous burst reads or sequential addressing?

No-CY7C1051DV33-10ZSXIT is a pure asynchronous SRAM with no internal address counter or burst logic. Each read requires full 19-bit address assertion on A0–A18; sequential access must be managed externally by the controller.

Can BHE and BLE both be asserted LOW simultaneously for full 16-bit writes?

Yes-asserting both BHE and BLE LOW enables concurrent write to I/O0–I/O7 and I/O8–I/O15, effectively performing a full 16-bit write. The device treats this as a single atomic operation with tWC = 10 ns minimum cycle time.

What is the maximum clock frequency supported when used with a microcontroller's external memory interface?

While not clocked, the device supports bus frequencies up to 100 MHz when interfaced with controllers like STM32F7/F4 or NXP i.MX RT, based on tRC = 10 ns and setup/hold timing margins verified per AC switching characteristics table (Rev. *J, Page 6).