Infineon Technologies CY7C1051DV33-12BAXIT

Overview

CY7C1051DV33-12BAXIT from Cypress Semiconductor is an 8-Mbit (512 K × 16) high-speed CMOS static RAM with 12 ns access time, 3.3 V supply, and industrial temperature range (–40 °C to +85 °C). It supports byte-wide writes via independent BHE/ BLE controls, features automatic CE power-down (ISB2 = 20 mA), TTL-compatible I/O, and is packaged in a Pb-free 48-ball FBGA.

For engineers reviewing the CY7C1051DV33-12BAXIT datasheet, CY7C1051DV33-12BAXIT pinout, CY7C1051DV33-12BAXIT application, or CY7C1051DV33-12BAXIT equivalent, key selection criteria include tAA = 12 ns read timing, dual-byte enable architecture, low-power standby modes, and compatibility with 3.3 V memory bus systems requiring deterministic access latency and data retention at 2.0 V.

Technical Context

The CY7C1051DV33-12BAXIT implements a synchronous, non-volatile-retentive SRAM array organized as 512 K words × 16 bits, using full CMOS circuitry for low power and high noise immunity. Its control logic decodes CE, OE, WE, BHE, and BLE to enable independent high- and low-byte write operations and tri-state output control.

It operates within strict DC and AC timing windows: tRC = 12 ns, tDOE = 6 ns, tHZOE = 6 ns, and supports automatic transition to ISB2 standby mode (20 mA) when CE is deasserted, with guaranteed data retention down to VCC = 2.0 V.

Key Specifications

Pinout & Package

Package: 48-ball fine-pitch ball grid array (FBGA), RoHS-compliant, 6 mm × 8 mm footprint, 0.5 mm pitch, center power/ground layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Compared with AS7C35128P-12TIN and IS61LV51216-12ML, the CY7C1051DV33-12BAXIT provides unique dual-byte enable architecture and FBGA packaging, enabling higher-density layouts and atomic half-word writes-critical for real-time control and FPGA configuration where bus efficiency and thermal management are prioritized.

Availability

CY7C1051DV33-12BAXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, FPGA configuration memory, and medical imaging frame buffering requiring stable component supply across extended product lifecycles.

Supply support for CY7C1051DV33-12BAXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and consumer applications.

The CY7C1051DV33 belongs to Cypress's high-speed parallel SRAM product line, engineered specifically for deterministic latency, low-power standby, and seamless integration into 3.3 V embedded systems with demanding real-time memory bandwidth needs.

FAQ

What is the minimum VCC required to retain data in CY7C1051DV33-12BAXIT?

The device guarantees full data retention at VCC = 2.0 V under specified conditions (CE > VCC – 0.3 V, inputs held at CMOS logic levels). This allows operation in low-power suspend modes without external backup power sources. Retention is not guaranteed below 2.0 V, and no data loss occurs during controlled ramp-down to this threshold per the tCDR specification.

Does CY7C1051DV33-12BAXIT support true 16-bit concurrent read/write operations?

No - it supports 16-bit-wide data bus access but performs byte-level writes independently via BHE and BLE. A full 16-bit write requires both signals asserted LOW simultaneously. Reads always present all 16 bits when CE and OE are active, regardless of BHE/ BLE state. The architecture enables selective byte updates without read-modify-write cycles.

Can CY7C1051DV33-12BAXIT be used with a 5 V microcontroller interface?

Yes - its inputs are TTL-compatible (VIH up to VCC + 0.3 V, VIL down to –0.3 V), allowing direct connection to 5 V logic outputs. However, its outputs swing only to 3.3 V levels and must not drive 5 V-tolerant inputs requiring >3.5 V HIGH thresholds without external level translation.

Is the 48-ball FBGA package of CY7C1051DV33-12BAXIT lead-free and RoHS compliant?

Yes - the "XIT" suffix denotes a Pb-free, RoHS-compliant 48-ball FBGA package with NiPdAu surface finish. Thermal resistance values (θJA = 28.31 °C/W) and solder reflow profile data are documented in the official Cypress package diagram DS001-00063 Rev. *J, page 12.