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Infineon Technologies CY7C1051DV33-12ZSXI
- Part No.:
- CY7C1051DV33-12ZSXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1051DV33-12ZSXI.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:2,260
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Product details
Overview
CY7C1051DV33-12ZSXI from Infineon Technologies (formerly Cypress) is a 8-Mbit (512 K × 16) high-speed CMOS static RAM with 12 ns access time, 3.3 V supply, industrial temperature range (–40 °C to +85 °C), and low standby current (ISB2 = 20 µA). It supports byte-wide writes via BHE/ BLE controls and operates in TTL-compatible I/O mode for seamless integration into legacy memory buses.
For engineers reviewing the CY7C1051DV33-12ZSXI datasheet, CY7C1051DV33-12ZSXI pinout, CY7C1051DV33-12ZSXI application, or CY7C1051DV33-12ZSXI equivalent, key selection criteria include tAA = 12 ns read timing, automatic CE power-down (ISB2 = 20 µA), 44-pin TSOP II package with center power/ground pinout, and dual-byte enable architecture for flexible data bus interfacing.
Technical Context
This SRAM implements a synchronous, non-volatile-retentive memory array organized as 512 K words × 16 bits, with independent byte-enable control (BHE/BLE) enabling selective 8-bit writes without read-modify-write cycles. Its TTL-compatible inputs and outputs eliminate level-shifting requirements in 3.3 V systems with legacy controllers.
The device uses automatic CE-driven power-down to reduce ISB2 to 20 µA when deselected, and supports 2.0 V data retention mode with ICCDR ≤ 20 mA. All timing parameters-including tACE (12 ns), tDOE (6 ns), and tHZOE (6 ns)-are specified at VCC = 3.3 V ± 0.3 V and TA = –40 °C to +85 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 8 Mbit (512 K × 16); enables single-chip replacement of two 4-Mbit × 8 devices in 16-bit data path systems. |
| Access Time (tAA) | 12 ns max; ensures compatibility with 83 MHz bus clocks in microcontroller and FPGA-based memory interfaces. |
| VCC Supply | 3.3 V ± 0.3 V; matches standard LVTTL and LVCMOS I/O voltage domains without regulation overhead. |
| Standby Current (ISB2) | 20 µA max; allows ultra-low-power hold mode during system sleep states without external power gating. |
| Data Retention Voltage | 2.0 V min; permits battery-backed operation using coin-cell sources while preserving stored contents. |
| Operating Temperature | –40 °C to +85 °C; qualified for industrial automation, motor control, and telecom infrastructure applications. |
| I/O Interface | TTL-compatible; eliminates need for level translators when interfacing with older microprocessors or CPLDs. |
Pinout & Package
The CY7C1051DV33-12ZSXI is packaged in a 44-pin Thin Small Outline Package (TSOP II) with center power/ground pinout-pin 22 (VCC) and pin 23 (VSS) located centrally to minimize IR drop and improve signal integrity across the 16-bit I/O bus.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting full 512 K-word addressing; A0–A18 directly map to memory location without decoding. |
| I/O0–I/O7 | Data Bus (Low Byte) | Bi-directional 8-bit data path enabled only when BLE = LOW; isolated during high-Z states. |
| I/O8–I/O15 | Data Bus (High Byte) | Bi-directional 8-bit data path enabled only when BHE = LOW; independent control enables mixed-width transfers. |
| CE | Chip Enable | Active-LOW global select; forces automatic power-down (ISB2) when HIGH, reducing current to 20 µA. |
| OE | Output Enable | Active-LOW read strobe; controls output drivers independently of CE to support burst reads and bus sharing. |
| WE | Write Enable | Active-LOW write strobe; initiates write cycle when CE and WE both LOW; timing-critical for tWC = 12 ns compliance. |
| BLE / BHE | Byte Enable Controls | Independent active-LOW enables for low/high byte; allows 8-bit writes without disturbing adjacent byte in 16-bit word. |
Key Features
| Feature | Design Value |
|---|---|
| Automatic CE Power-Down | Reduces ICC to ISB2 ≤ 20 µA when CE = HIGH, eliminating need for external power management logic. |
| Dual Independent Byte Enables | Enables true 8-bit write capability on either half of the 16-bit bus without read-modify-write overhead. |
| TTL-Compatible I/O | Accepts and drives standard 3.3 V TTL logic levels, removing level-shifters in mixed-voltage designs. |
| 2.0 V Data Retention | Maintains stored data at reduced VCC down to 2.0 V, supporting backup power schemes with minimal battery drain. |
| Center-Power TSOP II Pinout | VCC (pin 22) and VSS (pin 23) placed centrally to lower inductance and improve decoupling for high-speed operation. |
Applications
| Industrial PLC Memory Buffer | Automotive Engine Control Unit (ECU) |
|---|---|
Use Scenario: Stores real-time sensor calibration tables and fault logs in programmable logic controllers with deterministic 12 ns read latency. IC Role / Device Role / Timing Role: High-speed parallel SRAM acting as scratchpad memory for ARM Cortex-M7-based motion controllers. Use Value: Eliminates wait states in cyclic data acquisition loops due to tAA = 12 ns and tDOE = 6 ns, improving loop jitter by <150 ns. | Use Scenario: Holds transient engine parameter buffers and diagnostic event records in ISO 16750-compliant ECUs operating at –40 °C to +85 °C. IC Role / Device Role / Timing Role: Non-volatile-retentive SRAM providing 2.0 V data hold during cranking-induced brownouts. Use Value: Maintains critical fault codes during 2.0 V VCC dips without external backup capacitors or supercaps. |
| Medical Imaging Frame Buffer | Test & Measurement Equipment |
Use Scenario: Captures raw pixel streams from 12-bit ADCs in portable ultrasound systems requiring zero-latency memory access. IC Role / Device Role / Timing Role: 16-bit wide SRAM interfaced directly to FPGA fabric for pipelined image line buffering. Use Value: Supports 83 MHz pixel clock rates via tRC = 12 ns, enabling real-time 1080p@30 fps frame capture without FIFO bottlenecks. | Use Scenario: Stores waveform capture snapshots and instrument configuration in benchtop oscilloscopes with multi-channel analog front-ends. IC Role / Device Role / Timing Role: Dual-port-capable SRAM used for simultaneous acquisition and display refresh via byte-enable isolation. Use Value: Enables concurrent 8-bit scope channel storage (via BLE) and 16-bit metadata logging (via BHE+BLE) without bus contention. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS6C8016-12IN | 12 ns access, 3.3 V, but lacks BHE/BLE byte enables; uses single OE/WE control. | Requires external logic for byte-select writes; not drop-in compatible for existing BLE/BHE designs. | Select only if system uses full-word writes exclusively and board layout cannot accommodate pinout differences. |
| IS61LV51216-12ML | 12 ns access, 3.3 V, same 512 K × 16 organization, but higher ISB2 = 45 µA and no 2.0 V data retention. | Suitable for non-battery-backed applications where standby current >20 µA is acceptable. | Prefer when cost sensitivity outweighs low-power retention needs and thermal resistance (θJA = 42 °C/W) is acceptable. |
Compared with AS6C8016-12IN and IS61LV51216-12ML, the CY7C1051DV33-12ZSXI uniquely delivers byte-enable flexibility, 2.0 V data retention, and industry-leading 20 µA ISB2-making it optimal for space-constrained, battery-aware, and mixed-width interface designs.
Availability
CY7C1051DV33-12ZSXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, automotive ECU data logging, and medical imaging frame buffers requiring stable component supply across extended product lifecycles.
Supply support for CY7C1051DV33-12ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with emphasis on reliability and industrial longevity.
This device belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for high-reliability, pin-compatible replacements in mature 3.3 V parallel memory systems where long-term availability and proven qualification are critical.
FAQ
Is CY7C1051DV33-12ZSXI RoHS compliant and lead-free?
Yes. The "Z" suffix in CY7C1051DV33-12ZSXI indicates a lead-free, RoHS-compliant 44-pin TSOP II package per Infineon's packaging standards. The "SXI" suffix denotes industrial temperature grade (–40 °C to +85 °C) and Pb-free finish, verified in the official Infineon ordering information table.
What is the maximum clock frequency supported for continuous read cycles?
The device supports continuous read operations up to 83 MHz, derived from tRC = 12 ns minimum read cycle time. This assumes proper setup/hold timing compliance (tACE = 12 ns, tOHA = 2.5 ns) and TTL-level signal integrity on all control and data lines.
Can CY7C1051DV33-12ZSXI operate with VCC = 3.0 V?
No. The device is specified only for VCC = 3.3 V ± 0.3 V (i.e., 3.0 V to 3.6 V). Operation at exactly 3.0 V falls at the lower limit of the operating range and may violate tAA/tRC timing margins under worst-case temperature and process corners per AC Electrical Characteristics table.
Does this SRAM require an external clock signal?
No. CY7C1051DV33-12ZSXI is an asynchronous SRAM and requires no clock input. All operations are controlled by edge- and level-sensitive signals: CE, OE, WE, BHE, and BLE. Timing is governed solely by propagation delays and setup/hold windows relative to these control edges.
CY7C1051DV33-12ZSXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY7C1051DV33-12ZSXI FAQ
1.How can I place an order for CY7C1051DV33-12ZSXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1051DV33-12ZSXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1051DV33-12ZSXI reliable?
The price and inventory of CY7C1051DV33-12ZSXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1051DV33-12ZSXI is usually 5 days.
3.What payment methods are accepted for CY7C1051DV33-12ZSXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1051DV33-12ZSXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1051DV33-12ZSXI?
CY7C1051DV33-12ZSXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1051DV33-12ZSXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1051DV33-12ZSXI?
For technical support, including CY7C1051DV33-12ZSXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1051DV33-12ZSXI requirements.
6.How does Aetrix verify that CY7C1051DV33-12ZSXI is sourced from the original manufacturer or authorized distributors?
All CY7C1051DV33-12ZSXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1051DV33-12ZSXI meets industry standards.
7.What is the process for return or replacement of CY7C1051DV33-12ZSXI?
All CY7C1051DV33-12ZSXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1051DV33-12ZSXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1051DV33-12ZSXI part is unused and in its original packaging.
Return procedure for CY7C1051DV33-12ZSXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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