Infineon Technologies CY7C1051DV33-12ZSXIT

Overview

CY7C1051DV33-12ZSXIT from Infineon Technologies (formerly Cypress) is a 8-Mbit (512 K × 16) high-speed CMOS static RAM with 12 ns access time, 3.3 V supply, and industrial temperature range (–40 °C to +85 °C). It features TTL-compatible I/Os, automatic CE power-down, byte-wide write control via BHE/ BLE, and dual-package support (48-ball FBGA & 44-pin TSOP II). Used in real-time data buffering for industrial controllers and network packet memory.

For engineers reviewing the CY7C1051DV33-12ZSXIT datasheet, CY7C1051DV33-12ZSXIT pinout, CY7C1051DV33-12ZSXIT application, or CY7C1051DV33-12ZSXIT equivalent, key selection criteria include tAA = 12 ns read timing, ISB2 = 20 µA CMOS standby current, byte-select capability, and 3.3 V single-supply operation with 2.0 V data retention.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive memory array organized as 512 K words × 16 bits, with independent byte enable (BHE/BLE) for selective 8-bit writes. Its logic-level compatibility with TTL ensures seamless integration into legacy 3.3 V bus systems without level-shifting.

The device uses automatic CE-driven power-down to reduce ISB2 to 20 µA when deselected, and supports three distinct low-power states: active (ICC = 100 mA @ 100 MHz), standby (ISB1 = 35 mA with TTL inputs), and data retention (VCC = 2.0 V, ICCDR ≤ 20 mA).

Key Specifications

Pinout & Package

The CY7C1051DV33-12ZSXIT is packaged in a RoHS-compliant 48-ball fine-pitch ball grid array (FBGA) with 0.8 mm pitch and 9 mm × 8 mm body size. Pinout follows JEDEC MO-246AC standard with center power/ground distribution.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Compared with IS61LV51216AL-12TQLI and AS6C4008-12ZIN, the CY7C1051DV33-12ZSXIT uniquely combines byte-select write control, 2.0 V data retention, and 20 µA ISB2 - making it optimal for industrial systems requiring partial updates and fail-safe memory state preservation.

Availability

CY7C1051DV33-12ZSXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, network packet memory, and medical imaging frame store applications requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1051DV33-12ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with strong industrial and automotive qualifications.

The CY7C1051DV33 belongs to Infineon's legacy Cypress SRAM product line, designed specifically for high-reliability, low-latency parallel memory interfacing in industrial control, networking, and medical equipment where deterministic timing and robust power management are critical.

FAQ

Is CY7C1051DV33-12ZSXIT pin-compatible with earlier CY7C1051DV33 speed grades?

Yes - all CY7C1051DV33 variants (–10, –12, –15) share identical pinouts and package footprints across both 44-pin TSOP II and 48-ball FBGA packages. Timing parameters differ, but mechanical and electrical interface compatibility is maintained per Infineon's continuity commitment post-acquisition.

Does this SRAM require an external clock signal?

No - the CY7C1051DV33-12ZSXIT is an asynchronous SRAM. It operates without a clock; data access is controlled solely by CE, OE, WE, and address setup/hold timing. All timing parameters (e.g., tAA = 12 ns) are defined relative to control signal edges, not clock cycles.

Can BHE and BLE be asserted simultaneously for full 16-bit access?

Yes - asserting both BHE and BLE LOW enables concurrent read or write of all 16 data bits (I/O0–I/O15). This configuration matches standard 16-bit bus operations and is explicitly supported in the device's truth table and functional description.

What is the maximum operating frequency supported by the 12 ns speed grade?

The –12 speed grade supports a maximum read cycle time (tRC) of 12 ns, corresponding to a theoretical maximum bus frequency of 83.3 MHz. This assumes proper signal integrity, load capacitance ≤ 30 pF, and input transition times ≤ 3 ns as specified in the AC switching characteristics table.