Infineon Technologies CY7C1051H30-10BV1XE

Overview

CY7C1051H30-10BV1XE from Infineon Technologies (formerly Cypress) is an AEC-Q100 qualified automotive-grade 8-Mbit (512K × 16) CMOS static RAM with embedded ECC, designed for high-reliability memory storage in engine control units and ADAS domain controllers. It operates across –40 °C to +125 °C, delivers 10 ns access time (tAA), supports 2.2–3.6 V VCC, and features automatic CE power-down with ISB2 = 20 mA typical.

For engineers reviewing the CY7C1051H30-10BV1XE datasheet, CY7C1051H30-10BV1XE pinout, CY7C1051H30-10BV1XE application, or CY7C1051H30-10BV1XE equivalent, key selection criteria include its automotive temperature range, byte-enable architecture (BHE/BLE), TSOP II/VFBGA package options, and TTL-compatible I/O interface for legacy bus integration.

Technical Context

The CY7C1051H30-10BV1XE implements a 512K × 16-bit memory array with dedicated row/column decoders, sense amplifiers, and separate ECC encoding/decoding logic-though it does not support automatic write-back on error detection. Its control logic uses asynchronous CE/OE/WE with dual byte enables (BHE/BLE) to manage upper and lower 8-bit data lanes independently.

It supports three power states: active (ICC = 90 mA typ), automatic CE power-down (ISB2 = 20 mA typ), and 1.0 V data retention mode. Timing is defined by strict AC parameters including tRC = 10 ns, tDOE = 5 ns, and tHZOE = 5 ns, all specified under 5 pF load and 3 ns signal transition.

Key Specifications

Pinout & Package

Available in Pb-free 44-pin TSOP II (Type II, 400 mil body) and 48-ball VFBGA (6 mm × 8 mm, 0.8 mm pitch) packages. This part number corresponds to the 44-pin TSOP II variant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar automotive SRAM applications.

Compared with AS7C35128P-10TIN and IS61WV51216BLL-10MLI, the CY7C1051H30-10BV1XE uniquely combines AEC-Q100 Automotive-E qualification, on-die ECC, and 1.0 V data retention-making it the only option qualified for ASIL-B-compliant powertrain and ADAS memory subsystems.

Availability

CY7C1051H30-10BV1XE is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, and body control modules requiring stable component supply across automotive production lifecycles.

Supply support for CY7C1051H30-10BV1XE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and security solutions with vertical integration from silicon to system-level IP.

This device belongs to Infineon's automotive SRAM portfolio, engineered specifically for functional safety-critical memory applications in powertrain, chassis, and driver assistance systems where data integrity and thermal robustness are mandatory.

FAQ

Is CY7C1051H30-10BV1XE pin-compatible with standard 44-pin TSOP II SRAMs?

Yes-it uses industry-standard 44-pin TSOP II (Type II, 400 mil) footprint with identical pin spacing and mechanical dimensions. Pin assignments match JEDEC MO-143AC, including /CE, /OE, /WE, A0–A18, and I/O0–I/O15 layout. No PCB redesign is needed when upgrading from legacy 512K×16 SRAMs.

Does this SRAM support true 16-bit burst reads or only random access?

This device performs asynchronous random access only; it has no burst mode or sequential addressing logic. Each read requires full address setup (tAA = 10 ns) and independent /CE and /OE assertion. Burst transfers must be implemented externally via controller logic or DMA handshaking.

What is the maximum clock frequency supported for continuous read/write cycling?

As a static RAM, it has no internal clock. Maximum sustained cycle rate is determined by tRC = 10 ns, allowing up to 100 MHz random access throughput. Continuous operation at this rate requires maintaining VCC ≥ 2.2 V and junction temperature ≤ +125 °C, validated per AEC-Q100 thermal resistance (θJA = 66.96 °C/W).

Can the embedded ECC be disabled to use full 8 Mbit as raw memory?

No-ECC logic is hardwired and cannot be bypassed. The memory array includes dedicated parity bits; all 512K × 16 accesses route through ECC encoding/decoding. Attempting to disable ECC would result in undefined behavior or bus errors, as confirmed in the functional description (Document No. 001-87624 Rev. *I, page 2).