Infineon Technologies CY7C1051H30-10BV1XET

Overview

CY7C1051H30-10BV1XET from Infineon Technologies (formerly Cypress) is an AEC-Q100 qualified automotive-grade 8-Mbit (512K × 16) CMOS static RAM with embedded ECC, designed for high-reliability memory storage in engine control units and ADAS domain controllers. It delivers 10 ns access time (tAA), operates across –40 °C to +125 °C, supports 2.2 V–3.6 V supply, and features automatic CE power-down with ISB2 = 20 mA typical.

For engineers reviewing the CY7C1051H30-10BV1XET datasheet, CY7C1051H30-10BV1XET pinout, CY7C1051H30-10BV1XET application, or CY7C1051H30-10BV1XET equivalent, key selection criteria include its 48-ball VFBGA package, TTL-compatible I/Os, byte-wide write enable (BHE/BLE), data retention at 1.0 V, and automotive-E temperature compliance.

Technical Context

The CY7C1051H30-10BV1XET implements a synchronous, non-volatile-retentive SRAM architecture with dedicated ECC encoding/decoding circuitry for single-bit error correction and double-bit error detection. Its address space spans 19 address lines (A0–A18), supporting 512K words × 16 bits, and uses separate byte enables (BHE/BLE) to control upper/lower data bus segments independently.

It employs transistor-transistor logic (TTL)-compatible input thresholds and drive strength, supports CE/OE/WE control logic for seamless integration into microcontroller-based memory buses, and enters automatic low-power mode when CE is deasserted-reducing ICC to ISB2 = 20 mA typical without external sequencing.

Key Specifications

Pinout & Package

Package: 48-ball very fine-pitch ball grid array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar automotive SRAM applications.

Compared with AS7C3256B-10TIN and IS61WV51216BLL-10MLI, the CY7C1051H30-10BV1XET uniquely combines automotive-E qualification, on-die ECC, and 1.0 V data retention-making it the only option for ASIL-B compliant powertrain memory where silent data errors must be prevented.

Availability

CY7C1051H30-10BV1XET is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, and electric power steering modules requiring stable component supply across long automotive production lifecycles.

Supply support for CY7C1051H30-10BV1XET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, automotive ICs, and security solutions with over 40 years of automotive qualification heritage.

The CY7C1051H series belongs to Infineon's automotive SRAM portfolio, engineered specifically for functional safety-critical memory applications in powertrain, chassis, and ADAS systems where ECC and extended temperature operation are mandatory.

FAQ

Does CY7C1051H30-10BV1XET support true 16-bit parallel writes?

Yes. The device supports simultaneous 16-bit writes using both BHE and BLE asserted LOW. When both byte enables are active, I/O0–I/O7 and I/O8–I/O15 accept data concurrently into the same memory location addressed by A0–A18. This is confirmed in the functional description and truth table on page 11 of datasheet 001-87624 Rev. *I.

Is the embedded ECC capable of correcting multi-bit errors?

No. The ECC implementation corrects only single-bit errors and detects double-bit errors. The datasheet explicitly states "this device does not support automatic write-back on error detection" and confirms SEC-DED (Single Error Correction, Double Error Detection) functionality in the logic block diagram and feature list.

What is the maximum clock frequency supported for burst reads?

The device does not use a clock signal-it is asynchronous. Maximum effective throughput is determined by tRC = 10 ns, enabling up to 100 million read cycles per second in continuous operation. Timing is governed solely by address and control signal setup/hold constraints, not a system clock.

Can CY7C1051H30-10BV1XET operate reliably at 2.2 V across the full –40 °C to +125 °C range?

Yes. The operating range specification confirms VCC = 2.2 V–3.6 V over –40 °C to +125 °C (Automotive-E). DC electrical characteristics-including VOH, VOL, VIH, and VIL-are guaranteed across this full voltage and temperature envelope per Table on page 4 of the datasheet.