Infineon Technologies CY7C1051H30-10BVXIT

Overview

CY7C1051H30-10BVXIT from Infineon Technologies (formerly Cypress) is an 8-Mbit (512K × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), TTL-compatible I/O, 10 ns access time, and industrial-grade operation from –40 °C to +85 °C. It supports byte-level writes via BHE/ BLE control and operates across 2.2–3.6 V supply voltage.

For engineers reviewing the CY7C1051H30-10BVXIT datasheet, CY7C1051H30-10BVXIT pinout, CY7C1051H30-10BVXIT application, or CY7C1051H30-10BVXIT equivalent, key selection criteria include ECC-enabled data integrity in mission-critical memory buffers, low ISB2 standby current (20 mA typical), and compatibility with legacy 16-bit parallel bus interfaces in industrial controllers and telecom line cards.

Technical Context

The CY7C1051H30-10BVXIT implements a synchronous, non-volatile-retentive SRAM architecture with dedicated ECC encoder/decoder logic that detects and corrects single-bit errors on read access without automatic write-back. Its address decoding covers A0–A18 (512K words), and data path uses true 16-bit bidirectional I/O0–I/O15 with independent byte enable control.

Operation relies on three active-low control signals-CE, WE, and OE-with timing governed by tAA = 10 ns (address access), tCO = 10 ns (output hold), and tHZ = 3 ns (output high-impedance delay). The device enters low-power ISB2 mode when CE is deasserted and all inputs are at valid logic levels under CMOS input thresholds.

Key Specifications

Pinout & Package

The CY7C1051H30-10BVXIT is packaged in a 48-ball fine-pitch ball grid array (FBGA), RoHS-compliant, with 0.8 mm ball pitch and JEDEC MO-270AC footprint. Thermal performance is characterized by θJA = 31.50 °C/W (4-layer PCB).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-reliability parallel SRAM applications.

Compared with IS61WV51216BLL-10MLI and AS6C4008-10TIN, the CY7C1051H30-10BVXIT uniquely delivers hardware ECC in a single chip, reducing FPGA resource usage and eliminating software latency for error correction-critical for real-time control and safety-critical edge nodes.

Availability

CY7C1051H30-10BVXIT is available at Aetrix Electronics and suitable for industrial PLC data buffers, telecom line card memory, medical imaging frame stores, and avionics display controller buffers requiring stable component supply across extended product lifecycles.

Supply support for CY7C1051H30-10BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with strong industrial and aerospace heritage.

The CY7C1051H series belongs to Infineon's legacy Cypress SRAM portfolio, engineered for high-reliability, low-latency parallel memory applications in harsh-environment control systems and infrastructure equipment.

FAQ

Does CY7C1051H30-10BVXIT support automatic error correction write-back?

No. The device performs single-bit error correction on read access only and does not automatically rewrite corrected data to memory. System firmware must handle any required write-back if persistent correction is needed. This design minimizes latency and avoids unintended overwrites during transient bit flips.

What is the maximum clock frequency supported for burst-mode operation?

The CY7C1051H30-10BVXIT does not support clocked or burst-mode operation-it is an asynchronous SRAM. All timing is controlled by /CE, /WE, and /OE assertion edges. Maximum effective throughput is limited by tCYC = 10 ns minimum cycle time, yielding up to 100 million random accesses per second.

Can /BHE and /BLE be used simultaneously for full 16-bit writes?

Yes. Asserting both /BHE and /BLE LOW while /WE is LOW enables full 16-bit writes to I/O0–I/O15. The device treats this as a standard word write, with no timing penalty versus byte writes-the internal write path handles all 16 bits concurrently.

Is the 48-ball FBGA footprint compatible with CY7C1051DV33-10BVXI?

Yes. Both CY7C1051H30-10BVXIT and CY7C1051DV33-10BVXI share identical 48-ball FBGA mechanical dimensions, pad layout, and ball assignment. They differ only in electrical specs (ECC presence, VCC range, speed grade), allowing drop-in replacement in existing PCB designs where ECC is not required.