Infineon Technologies CY7C1059DV33-10BAXI
- Part No.:
- CY7C1059DV33-10BAXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 36-TFBGA
- Datasheet:
-
CY7C1059DV33-10BAXI.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 36FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,575
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Product details
Overview
CY7C1059DV33-10BAXI from Cypress Semiconductor is a 8-Mbit (1M × 8) high-speed CMOS static RAM with 10 ns access time, 3.3 V supply, industrial temperature range (–40°C to +85°C), and low active current (110 mA). It supports TTL-compatible interfacing, automatic CE-controlled power-down, and data retention at 2.0 V, deployed in embedded control memory buffers and real-time data logging subsystems.
For engineers reviewing the CY7C1059DV33-10BAXI datasheet, CY7C1059DV33-10BAXI pinout, CY7C1059DV33-10BAXI application, or CY7C1059DV33-10BAXI equivalent, key selection criteria include tAA = 10 ns read timing, ISB2 = 20 mA standby current, FBGA-36 package compatibility, and CE/OE/WE three-control logic for multi-chip memory expansion.
Technical Context
This SRAM implements asynchronous random-access architecture with tri-state I/O drivers, address-valid-to-data-valid propagation governed by tAA (10 ns), and dual power-down modes: ISB1 (40 mA, TTL input threshold) and ISB2 (20 mA, CMOS input threshold). Deselection via CE HIGH forces automatic transition to low-power retention state.
It uses separate CE, OE, and WE controls to decouple chip selection, output enable, and write initiation-enabling interleaved read/write operations and seamless bank expansion without external gating logic. The 1M × 8 organization maps A0–A19 to 20-bit addressing and I/O0–I/O7 to bidirectional data bus.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 8 Mbit (1,048,576 × 8 bits); supports byte-wide data paths without width conversion logic |
| Access Time (tAA) | 10 ns; enables direct interface with 100 MHz microcontrollers without wait states |
| VCC Supply | 3.3 V ± 0.3 V; compatible with standard LVTTL and LVCMOS I/O domains |
| Active Current (ICC) | 110 mA max at 100 MHz; defines thermal budget for dense PCB layouts |
| Standby Current (ISB2) | 20 mA max under CMOS-input power-down; critical for battery-backed retention mode |
| Data Retention Voltage | 2.0 V minimum; allows operation during brown-out or controlled VCC ramp-down |
| Operating Temperature | –40°C to +85°C; qualified for industrial-grade embedded systems |
Pinout & Package
The CY7C1059DV33-10BAXI is packaged in a lead-free 36-ball Fine-Pitch Ball Grid Array (FBGA), 7.0 mm × 8.5 mm × 1.2 mm body, with center power/ground pinout optimized for signal integrity and thermal dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit row/column select; fully decoded internally; no external address latching required |
| I/O0–I/O7 | Bidirectional Data Bus | Tri-state capable; high-impedance when CE HIGH, OE HIGH, or WE LOW |
| CE | Chip Enable (active LOW) | Primary device selection; triggers automatic power-down when deasserted |
| OE | Output Enable (active LOW) | Controls output driver enable independently of CE; supports read-before-write protocols |
| WE | Write Enable (active LOW) | Initiates write cycle; overlapping CE LOW and WE LOW defines write window |
| VCC | Power Supply | Two dedicated VCC balls (A15, A18) reduce IR drop and improve noise margin |
| VSS | Ground | Two dedicated VSS balls (A11, A12) provide low-inductance return path |
Key Features
| Feature | Design Value |
|---|---|
| TTL-compatible I/O | VIH = 2.0 V min, VIL = 0.8 V max - interoperable with legacy 3.3 V microcontrollers without level shifters |
| Automatic CE power-down | Reduces ICC to ISB2 = 20 mA without external control logic or sleep-mode software overhead |
| 2.0 V data retention | Preserves memory contents during partial power loss or controlled VCC ramp-down sequences |
| Tri-state outputs with zero hold time | tHZOE = 5 ns, tLZOE = 0 ns - eliminates bus contention during fast read/write transitions |
| Center VCC/VSS pinout | Minimizes simultaneous switching noise and improves signal integrity in high-density routing |
Applications
| Industrial PLC Data Buffer | Medical Device Real-Time Logging |
|---|---|
Use Scenario: Storing sensor-acquired waveform samples between host processor polling intervals in programmable logic controllers. IC Role / Device Role / Timing Role: Asynchronous byte-wide scratchpad memory with deterministic 10 ns read latency and CE-gated power gating. Use Value: Eliminates wait states for ARM Cortex-M4-based controllers running at 100 MHz while maintaining <20 mA standby draw during idle cycles. | Use Scenario: Capturing ECG waveform snapshots during transient power events in portable diagnostic equipment. IC Role / Device Role / Timing Role: Retentive buffer holding up to 1 MB of raw analog data during VCC brown-out down to 2.0 V. Use Value: Ensures no loss of critical patient data when main supply dips below 3.0 V, leveraging guaranteed 2.0 V data retention. |
| Avionics Sensor Interface Module | Test Equipment Pattern Memory |
Use Scenario: Interfacing with MIL-STD-1553B remote terminals requiring deterministic memory response under –40°C to +85°C conditions. IC Role / Device Role / Timing Role: High-reliability, temperature-stable SRAM providing fixed-latency access for time-critical command buffering. Use Value: Meets avionics timing budgets with tAA = 10 ns and guaranteed operation across full industrial temperature range. | Use Scenario: Storing digital stimulus/response patterns in automated test equipment (ATE) for semiconductor wafer probing. IC Role / Device Role / Timing Role: High-speed pattern store enabling 100 MHz vector rate with zero-cycle turnaround between read/write phases. Use Value: Supports concurrent pattern loading and execution via independent CE/OE/WE control, reducing test cycle time. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS6C1008-10TIN | 10 ns access, 3.3 V, but only ISB = 30 mA (vs. 20 mA); no 2.0 V retention spec | Lacks guaranteed data retention below 3.0 V; unsuitable for brown-out recovery use cases | Select when lowest standby current is not required and retention voltage margin is non-critical |
| IS61LV10248-10ML | 10 ns access, 3.3 V, ISB = 25 mA; supports 2.2 V retention (not 2.0 V); TSOP-II only | Higher retention voltage threshold and no FBGA option limits board space and thermal performance | Prefer for cost-sensitive TSOP-II designs where FBGA footprint and 2.0 V retention are unnecessary |
Compared with AS6C1008-10TIN and IS61LV10248-10ML, the CY7C1059DV33-10BAXI uniquely delivers 20 mA ISB2 standby current and 2.0 V data retention in an FBGA package-making it optimal for space-constrained, battery-aware industrial systems requiring robust low-voltage operation.
Availability
CY7C1059DV33-10BAXI is available at Aetrix Electronics and suitable for industrial PLC data buffers, medical real-time logging subsystems, and avionics sensor interface modules requiring stable component supply and long-term lifecycle support.
Supply support for CY7C1059DV33-10BAXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and programmable system-on-chip solutions for industrial, automotive, and consumer markets.
The CY7C1059DV33 belongs to Cypress's high-speed asynchronous SRAM product line, designed specifically for deterministic, low-latency memory interfacing in real-time embedded systems where timing predictability and power efficiency are critical.
FAQ
What is the minimum VCC required to retain data in CY7C1059DV33-10BAXI?
The device guarantees data retention down to VCC = 2.0 V, provided CE is held HIGH and input voltages remain within CMOS thresholds (VIN > VCC – 0.3 V or VIN < 0.3 V). This enables operation during brown-out conditions without external backup power circuitry.
Does CY7C1059DV33-10BAXI support concurrent read and write operations?
No-it is a single-port asynchronous SRAM and does not support true concurrent access. Read and write cycles are mutually exclusive; overlapping CE LOW with WE LOW initiates a write, while CE LOW with WE HIGH and OE LOW enables read. Bus arbitration must be handled externally.
Can CY7C1059DV33-10BAXI be used with 5 V tolerant microcontrollers?
No-the inputs are not 5 V tolerant. VIH max is VCC + 0.3 V = 3.6 V at 3.3 V supply. Direct connection to 5 V logic requires level-shifting circuitry; however, its TTL-compatible thresholds (VIH = 2.0 V min) allow safe interface with 3.3 V LVTTL outputs.
What is the significance of the "BAXI" suffix in CY7C1059DV33-10BAXI?
The "BAXI" suffix denotes the 36-ball FBGA package (51-85105), lead-free finish, and industrial temperature grade (–40°C to +85°C). "BA" = FBGA, "X" = Pb-free, "I" = Industrial; this distinguishes it from the TSOP-II variant "ZSXI".
CY7C1059DV33-10BAXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 36-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 1M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 36-FBGA (7x8.5)
CY7C1059DV33-10BAXI FAQ
1.How can I place an order for CY7C1059DV33-10BAXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1059DV33-10BAXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1059DV33-10BAXI reliable?
The price and inventory of CY7C1059DV33-10BAXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1059DV33-10BAXI is usually 5 days.
3.What payment methods are accepted for CY7C1059DV33-10BAXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1059DV33-10BAXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1059DV33-10BAXI?
CY7C1059DV33-10BAXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1059DV33-10BAXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1059DV33-10BAXI?
For technical support, including CY7C1059DV33-10BAXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1059DV33-10BAXI requirements.
6.How does Aetrix verify that CY7C1059DV33-10BAXI is sourced from the original manufacturer or authorized distributors?
All CY7C1059DV33-10BAXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1059DV33-10BAXI meets industry standards.
7.What is the process for return or replacement of CY7C1059DV33-10BAXI?
All CY7C1059DV33-10BAXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1059DV33-10BAXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1059DV33-10BAXI part is unused and in its original packaging.
Return procedure for CY7C1059DV33-10BAXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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