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Infineon Technologies CY7C1059DV33-10BAXI

Part No.:
CY7C1059DV33-10BAXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
36-TFBGA
Datasheet:
AetrixCY7C1059DV33-10BAXI.pdf
Description:
IC SRAM 8MBIT PARALLEL 36FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,575

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Product details

Overview

CY7C1059DV33-10BAXI from Cypress Semiconductor is a 8-Mbit (1M × 8) high-speed CMOS static RAM with 10 ns access time, 3.3 V supply, industrial temperature range (–40°C to +85°C), and low active current (110 mA). It supports TTL-compatible interfacing, automatic CE-controlled power-down, and data retention at 2.0 V, deployed in embedded control memory buffers and real-time data logging subsystems.

For engineers reviewing the CY7C1059DV33-10BAXI datasheet, CY7C1059DV33-10BAXI pinout, CY7C1059DV33-10BAXI application, or CY7C1059DV33-10BAXI equivalent, key selection criteria include tAA = 10 ns read timing, ISB2 = 20 mA standby current, FBGA-36 package compatibility, and CE/OE/WE three-control logic for multi-chip memory expansion.

Technical Context

This SRAM implements asynchronous random-access architecture with tri-state I/O drivers, address-valid-to-data-valid propagation governed by tAA (10 ns), and dual power-down modes: ISB1 (40 mA, TTL input threshold) and ISB2 (20 mA, CMOS input threshold). Deselection via CE HIGH forces automatic transition to low-power retention state.

It uses separate CE, OE, and WE controls to decouple chip selection, output enable, and write initiation-enabling interleaved read/write operations and seamless bank expansion without external gating logic. The 1M × 8 organization maps A0–A19 to 20-bit addressing and I/O0–I/O7 to bidirectional data bus.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Size8 Mbit (1,048,576 × 8 bits); supports byte-wide data paths without width conversion logic
Access Time (tAA)10 ns; enables direct interface with 100 MHz microcontrollers without wait states
VCC Supply3.3 V ± 0.3 V; compatible with standard LVTTL and LVCMOS I/O domains
Active Current (ICC)110 mA max at 100 MHz; defines thermal budget for dense PCB layouts
Standby Current (ISB2)20 mA max under CMOS-input power-down; critical for battery-backed retention mode
Data Retention Voltage2.0 V minimum; allows operation during brown-out or controlled VCC ramp-down
Operating Temperature–40°C to +85°C; qualified for industrial-grade embedded systems

Pinout & Package

The CY7C1059DV33-10BAXI is packaged in a lead-free 36-ball Fine-Pitch Ball Grid Array (FBGA), 7.0 mm × 8.5 mm × 1.2 mm body, with center power/ground pinout optimized for signal integrity and thermal dissipation.

Pin/TerminalCircuit RoleDesign Meaning
A0–A19Address Inputs20-bit row/column select; fully decoded internally; no external address latching required
I/O0–I/O7Bidirectional Data BusTri-state capable; high-impedance when CE HIGH, OE HIGH, or WE LOW
CEChip Enable (active LOW)Primary device selection; triggers automatic power-down when deasserted
OEOutput Enable (active LOW)Controls output driver enable independently of CE; supports read-before-write protocols
WEWrite Enable (active LOW)Initiates write cycle; overlapping CE LOW and WE LOW defines write window
VCCPower SupplyTwo dedicated VCC balls (A15, A18) reduce IR drop and improve noise margin
VSSGroundTwo dedicated VSS balls (A11, A12) provide low-inductance return path

Key Features

FeatureDesign Value
TTL-compatible I/OVIH = 2.0 V min, VIL = 0.8 V max - interoperable with legacy 3.3 V microcontrollers without level shifters
Automatic CE power-downReduces ICC to ISB2 = 20 mA without external control logic or sleep-mode software overhead
2.0 V data retentionPreserves memory contents during partial power loss or controlled VCC ramp-down sequences
Tri-state outputs with zero hold timetHZOE = 5 ns, tLZOE = 0 ns - eliminates bus contention during fast read/write transitions
Center VCC/VSS pinoutMinimizes simultaneous switching noise and improves signal integrity in high-density routing

Applications

Industrial PLC Data BufferMedical Device Real-Time Logging

Use Scenario: Storing sensor-acquired waveform samples between host processor polling intervals in programmable logic controllers.

IC Role / Device Role / Timing Role: Asynchronous byte-wide scratchpad memory with deterministic 10 ns read latency and CE-gated power gating.

Use Value: Eliminates wait states for ARM Cortex-M4-based controllers running at 100 MHz while maintaining <20 mA standby draw during idle cycles.

Use Scenario: Capturing ECG waveform snapshots during transient power events in portable diagnostic equipment.

IC Role / Device Role / Timing Role: Retentive buffer holding up to 1 MB of raw analog data during VCC brown-out down to 2.0 V.

Use Value: Ensures no loss of critical patient data when main supply dips below 3.0 V, leveraging guaranteed 2.0 V data retention.

Avionics Sensor Interface ModuleTest Equipment Pattern Memory

Use Scenario: Interfacing with MIL-STD-1553B remote terminals requiring deterministic memory response under –40°C to +85°C conditions.

IC Role / Device Role / Timing Role: High-reliability, temperature-stable SRAM providing fixed-latency access for time-critical command buffering.

Use Value: Meets avionics timing budgets with tAA = 10 ns and guaranteed operation across full industrial temperature range.

Use Scenario: Storing digital stimulus/response patterns in automated test equipment (ATE) for semiconductor wafer probing.

IC Role / Device Role / Timing Role: High-speed pattern store enabling 100 MHz vector rate with zero-cycle turnaround between read/write phases.

Use Value: Supports concurrent pattern loading and execution via independent CE/OE/WE control, reducing test cycle time.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed asynchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS6C1008-10TIN10 ns access, 3.3 V, but only ISB = 30 mA (vs. 20 mA); no 2.0 V retention specLacks guaranteed data retention below 3.0 V; unsuitable for brown-out recovery use casesSelect when lowest standby current is not required and retention voltage margin is non-critical
IS61LV10248-10ML10 ns access, 3.3 V, ISB = 25 mA; supports 2.2 V retention (not 2.0 V); TSOP-II onlyHigher retention voltage threshold and no FBGA option limits board space and thermal performancePrefer for cost-sensitive TSOP-II designs where FBGA footprint and 2.0 V retention are unnecessary

Compared with AS6C1008-10TIN and IS61LV10248-10ML, the CY7C1059DV33-10BAXI uniquely delivers 20 mA ISB2 standby current and 2.0 V data retention in an FBGA package-making it optimal for space-constrained, battery-aware industrial systems requiring robust low-voltage operation.

Availability

CY7C1059DV33-10BAXI is available at Aetrix Electronics and suitable for industrial PLC data buffers, medical real-time logging subsystems, and avionics sensor interface modules requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1059DV33-10BAXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and programmable system-on-chip solutions for industrial, automotive, and consumer markets.

The CY7C1059DV33 belongs to Cypress's high-speed asynchronous SRAM product line, designed specifically for deterministic, low-latency memory interfacing in real-time embedded systems where timing predictability and power efficiency are critical.

FAQ

What is the minimum VCC required to retain data in CY7C1059DV33-10BAXI?

The device guarantees data retention down to VCC = 2.0 V, provided CE is held HIGH and input voltages remain within CMOS thresholds (VIN > VCC – 0.3 V or VIN < 0.3 V). This enables operation during brown-out conditions without external backup power circuitry.

Does CY7C1059DV33-10BAXI support concurrent read and write operations?

No-it is a single-port asynchronous SRAM and does not support true concurrent access. Read and write cycles are mutually exclusive; overlapping CE LOW with WE LOW initiates a write, while CE LOW with WE HIGH and OE LOW enables read. Bus arbitration must be handled externally.

Can CY7C1059DV33-10BAXI be used with 5 V tolerant microcontrollers?

No-the inputs are not 5 V tolerant. VIH max is VCC + 0.3 V = 3.6 V at 3.3 V supply. Direct connection to 5 V logic requires level-shifting circuitry; however, its TTL-compatible thresholds (VIH = 2.0 V min) allow safe interface with 3.3 V LVTTL outputs.

What is the significance of the "BAXI" suffix in CY7C1059DV33-10BAXI?

The "BAXI" suffix denotes the 36-ball FBGA package (51-85105), lead-free finish, and industrial temperature grade (–40°C to +85°C). "BA" = FBGA, "X" = Pb-free, "I" = Industrial; this distinguishes it from the TSOP-II variant "ZSXI".

CY7C1059DV33-10BAXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
36-TFBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
8Mbit
Memory Organization:
1M x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
36-FBGA (7x8.5)

CY7C1059DV33-10BAXI FAQ

1.How can I place an order for CY7C1059DV33-10BAXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1059DV33-10BAXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1059DV33-10BAXI reliable?

The price and inventory of CY7C1059DV33-10BAXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1059DV33-10BAXI is usually 5 days.

3.What payment methods are accepted for CY7C1059DV33-10BAXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1059DV33-10BAXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1059DV33-10BAXI?

CY7C1059DV33-10BAXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1059DV33-10BAXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1059DV33-10BAXI?

For technical support, including CY7C1059DV33-10BAXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1059DV33-10BAXI requirements.

6.How does Aetrix verify that CY7C1059DV33-10BAXI is sourced from the original manufacturer or authorized distributors?

All CY7C1059DV33-10BAXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1059DV33-10BAXI meets industry standards.

7.What is the process for return or replacement of CY7C1059DV33-10BAXI?

All CY7C1059DV33-10BAXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1059DV33-10BAXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1059DV33-10BAXI part is unused and in its original packaging.

Return procedure for CY7C1059DV33-10BAXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1059DV33-10BAXI Tags

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