Infineon Technologies CY7C1059DV33-12ZSXIT

Overview

CY7C1059DV33-12ZSXIT from Cypress Semiconductor is a 8-Mbit (1M × 8) asynchronous CMOS static RAM with 12 ns maximum access time, 3.3 V supply, TTL-compatible I/O, and automatic CE-controlled power-down mode. It operates across –40°C to +85°C and uses a 44-pin TSOP II package with center power/ground pinout for noise immunity in embedded memory subsystems.

For engineers reviewing the CY7C1059DV33-12ZSXIT datasheet, CY7C1059DV33-12ZSXIT pinout, CY7C1059DV33-12ZSXIT application, or CY7C1059DV33-12ZSXIT equivalent, key selection criteria include tAA = 12 ns read timing, ISB2 = 20 µA standby current, data retention at 2.0 V, tri-state I/O control via CE/OE/WE, and industrial-grade reliability in Pb-free TSOP II packaging.

Technical Context

This SRAM implements a fully asynchronous interface with independent Chip Enable (CE), Output Enable (OE), and Write Enable (WE) controls. Its 1M × 8 organization supports byte-wide data paths without external data bus multiplexing, and the center-power/ground TSOP II pinout reduces simultaneous switching noise.

The device enters low-power ISB2 mode (20 µA) when CE is deasserted, retains data down to 2.0 V, and guarantees valid outputs within 12 ns of address assertion (tAA) or CE assertion (tACE). All I/O pins are TTL-compatible with VIH = 2.0 V min and VOL = 0.4 V max at 8 mA sink.

Key Specifications

Pinout & Package

Package: 44-pin TSOP II (Pb-free), 10.16 mm × 20.0 mm body, 0.8 mm pitch, center power (VCC) and ground (VSS) pins for reduced noise coupling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Compared with IS61LV10248-12MLI, CY7C1059DV33-12ZSXIT provides superior noise immunity via its center-power TSOP II layout and lower standby current (20 µA vs. 35 µA); versus MC10EL1648DTG, it delivers true random-access memory functionality without clocking or external sequencing logic.

Availability

CY7C1059DV33-12ZSXIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical imaging frame stores, avionics display controller caches, and test equipment pattern memories requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1059DV33-12ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable logic solutions for industrial, automotive, and communications markets.

The CY7C1059DV33 belongs to Cypress's legacy asynchronous SRAM product line, engineered specifically for deterministic, low-latency memory interfacing in real-time embedded systems where predictability outweighs density or power-per-bit optimization.

FAQ

Is CY7C1059DV33-12ZSXIT pin-compatible with CY7C1059DV33-10ZSXI?

Yes - both share identical 44-pin TSOP II package and pinout. The only difference is access time: –10 version guarantees 10 ns tAA, while –12 guarantees 12 ns. Systems designed for –12 will operate reliably with –10, but not vice versa without timing margin verification.

Does this SRAM require an external clock signal?

No - CY7C1059DV33-12ZSXIT is fully asynchronous. All operations are controlled solely by CE, OE, and WE timing relative to address and data transitions; no clock input or internal oscillator is present or required.

Can IO pins be driven while CE is HIGH?

No - when CE is HIGH, all IO pins enter high-impedance state regardless of OE or WE status. This prevents bus contention during memory expansion and enables clean multi-SRAM bus sharing without external isolation logic.

What is the minimum VCC required to retain data?

Data retention is guaranteed down to 2.0 V (VDR), per datasheet specification. Below this voltage, data integrity is not assured. The device draws only 20 µA in retention mode (ISB2) at VCC = 2.0 V, enabling extended hold times on backup capacitors or batteries.