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Infineon Technologies CY7C1059DV33-12ZSXQ
- Part No.:
- CY7C1059DV33-12ZSXQ
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1059DV33-12ZSXQ.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:20,430
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Product details
Overview
CY7C1059DV33-12ZSXQ from Infineon Technologies (formerly Cypress) is a 8-Mbit (1M × 8) high-speed CMOS static RAM with 12 ns access time, 3.3 V supply, TTL-compatible I/O, and automatic CE-controlled power-down. It operates across –40 °C to +85 °C and delivers 100 mA active current and 20 mA CMOS standby current in industrial applications requiring reliable, low-latency memory for real-time data buffering.
For engineers reviewing the CY7C1059DV33-12ZSXQ datasheet, CY7C1059DV33-12ZSXQ pinout, CY7C1059DV33-12ZSXQ application, or CY7C1059DV33-12ZSXQ equivalent, key selection criteria include tAA = 12 ns read timing, ISB2 = 20 µA standby current (CMOS mode), VCC = 3.3 V ±0.3 V tolerance, 44-pin TSOP-II package with center power/ground pinout, and support for easy memory expansion via CE/OE/WE control logic.
Technical Context
The CY7C1059DV33-12ZSXQ implements a fully asynchronous SRAM architecture with tri-state bidirectional I/Os (I/O0–I/O7), independent address decoding (A0–A19), and dual-power management: automatic CE-driven power-down (ISB2 = 20 µA at 0 Hz) and 2.0 V data retention capability. Its logic-level compatibility ensures seamless interface with 3.3 V TTL and CMOS systems without level-shifting.
It uses a 1M × 8 memory array with on-chip sense amplifiers and input buffers, enabling deterministic read/write cycles governed by overlapping CE/WE/OE timing windows. The device supports two read modes (address- and OE-controlled) and two write modes (OE-high and OE-low), with all AC parameters specified under defined load conditions (5 pF for high-Z, 30 pF for active outputs).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| tAA | 12 ns - maximum address-to-data-valid delay; defines minimum read latency for burst-free operation. |
| ICC (active) | 100 mA at f = 100 MHz - peak operating current; determines power rail sizing and thermal budget. |
| ISB2 (standby) | 20 µA - CMOS-mode standby current when CE > VCC – 0.3 V; enables ultra-low-power sleep states. |
| VCC | 3.3 V ± 0.3 V - supply voltage range; requires stable LDO or regulator with ≤±9% tolerance. |
| Data retention | 2.0 V minimum VCC - retains memory contents during brown-out or controlled power-down. |
| Package | 44-pin TSOP-II - surface-mount, 0.8 mm pitch, center VCC/VSS pinout; optimized for PCB signal integrity. |
| Operating temp | –40 °C to +85 °C - industrial-grade thermal range; validated for embedded control and communications hardware. |
Pinout & Package
44-pin Thin Small Outline Package (TSOP-II) with center power/ground pinout: VCC and VSS located centrally (pins 16/17 and 31/32), minimizing power distribution inductance and improving noise immunity in high-speed memory buses.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address inputs | 20-bit address bus supporting 1M-word addressing; compatible with standard microcontroller/microprocessor address lines. |
| I/O0–I/O7 | Bidirectional data I/O | 8-bit tri-state data bus; high-impedance when CE HIGH, OE HIGH, or WE LOW during write. |
| CE | Chip Enable (active LOW) | Primary device select; initiates automatic power-down when deasserted (HIGH) in CMOS mode. |
| OE | Output Enable (active LOW) | Controls output drivers only; does not affect internal power state or address decoding. |
| WE | Write Enable (active LOW) | Controls write latching; must be LOW with CE LOW to store data; transitions terminate write cycles. |
| VCC | Power supply | 3.3 V core and I/O supply; pins 16 and 31 provide redundant connection for low-impedance routing. |
| VSS | Ground | Reference ground; pins 17 and 32 placed adjacent to VCC for optimal decoupling. |
Key Features
| Feature | Design Value |
|---|---|
| 12 ns access time | Enables direct interfacing with 80 MHz+ microcontrollers without wait states in synchronous bus configurations. |
| 20 µA CMOS standby current | Reduces system-level quiescent power by >95% vs. TTL standby, critical for battery-backed or energy-harvesting systems. |
| 2.0 V data retention | Allows safe memory hold during controlled VCC ramp-down or backup battery switchover without data loss. |
| TTL-compatible I/O | Eliminates need for external level shifters when interfacing with legacy 3.3 V logic families (e.g., 74LVC, ALVC). |
| Easy memory expansion | Dedicated CE/OE/WE controls enable stacking multiple devices using simple address decoding (e.g., A20 for bank select). |
Applications
| Industrial PLC Data Buffering | Medical Imaging Frame Storage |
|---|---|
Use Scenario: Real-time acquisition of sensor data streams in programmable logic controllers with deterministic cycle times. IC Role / Device Role / Timing Role: Asynchronous SRAM buffer between ADC interface and CPU bus; absorbs burst writes and feeds sequential reads without DMA overhead. Use Value: 12 ns tAA ensures sub-microsecond response to interrupt-driven sampling events; 20 µA ISB2 extends runtime during watchdog-triggered sleep intervals. | Use Scenario: Temporary storage of uncompressed grayscale image frames (e.g., 1024 × 768 × 8-bit) in portable ultrasound units. IC Role / Device Role / Timing Role: High-bandwidth frame buffer supporting parallel pixel readout at >30 MB/s sustained rate. Use Value: 100 mA ICC at 100 MHz supports continuous streaming; 44-pin TSOP-II allows dense layout in space-constrained handheld enclosures. |
| Avionics Sensor Log Memory | Test Equipment Pattern Memory |
Use Scenario: Non-volatile logging of flight-critical sensor telemetry during power interruptions or brown-outs. IC Role / Device Role / Timing Role: Retentive memory holding last 10 seconds of data; powered from backup supercapacitor at 2.0 V. Use Value: Guaranteed 2.0 V data retention eliminates need for external EEPROM/NVRAM; industrial temp rating ensures reliability at cabin altitudes. | Use Scenario: Storing digital stimulus/response patterns in automated test equipment (ATE) for semiconductor wafer probing. IC Role / Device Role / Timing Role: High-speed pattern generator memory synchronized to 100 MHz clock with zero-wait-state access. Use Value: tAA = 12 ns and tRC = 12 ns match ATE timing margins; CE/OE/WE control enables precise pattern sequencing without FPGA logic overhead. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV102416AL-12TQLI | 16-bit bus (1M × 16), 12 ns, 3.3 V, 48-pin TSOPII; higher density but wider interface. | Requires 16-bit data path redesign; unsuitable for 8-bit microcontrollers without glue logic. | Select only if system already uses 16-bit bus and needs double bandwidth per access. |
| AS6C4008-12ZIN | 8-Mbit (512K × 8), 12 ns, 3.3 V, 32-pin SOJ; lower pin count, no center VCC/VSS. | Limited to lower-density designs; lacks 2.0 V data retention and industrial temperature grade. | Prefer for cost-sensitive consumer applications where extended temp and retention are non-critical. |
Compared with IS61LV102416AL-12TQLI and AS6C4008-12ZIN, the CY7C1059DV33-12ZSXQ uniquely combines 8-bit bus simplicity, industrial temperature support, 2.0 V data retention, and center-pin TSOP-II layout-making it optimal for space-constrained, mission-critical embedded systems requiring guaranteed memory persistence and low-power sleep.
Availability
CY7C1059DV33-12ZSXQ is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame storage, and avionics sensor log memory requiring stable component supply, long-term lifecycle support, and Q-grade reliability assurance.
Supply support for CY7C1059DV33-12ZSXQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions acquired through its 2020 acquisition of Cypress Semiconductor.
This device belongs to the legacy Cypress SRAM product line, designed specifically for high-reliability, low-latency embedded memory applications where deterministic timing, industrial temperature operation, and power-aware standby modes are essential.
FAQ
What is the minimum VCC required to retain data in CY7C1059DV33-12ZSXQ?
The device guarantees data retention down to 2.0 V VCC, provided CE is held above VCC – 0.3 V and all inputs are clamped to valid logic levels (≥ VCC – 0.3 V or ≤ 0.3 V). This enables use with backup capacitors or brown-out circuits without external nonvolatile memory.
Does CY7C1059DV33-12ZSXQ support true 3.3 V TTL-compatible signaling?
Yes - VIH is specified from 2.0 V to VCC + 0.3 V and VOL is ≤ 0.4 V at 8 mA sink, meeting TTL output and input thresholds at 3.3 V. No level translation is needed when interfacing with 74LVC or similar 3.3 V logic families.
How does the TSOP-II center power/ground pinout improve system performance?
The symmetric placement of VCC (pins 16, 31) and VSS (pins 17, 32) reduces power loop inductance and improves high-frequency decoupling. This minimizes VCC sag during fast I/O transitions and lowers simultaneous switching noise in multi-SRAM systems.
Can CY7C1059DV33-12ZSXQ be used in place of older CY7C1059DV33-10 variants?
Yes - it is functionally and pin-compatible with the -10 variant, differing only in tAA (12 ns vs. 10 ns) and corresponding AC timing. Systems designed for 10 ns can safely operate the -12 version at reduced clock rates or with added wait states.
CY7C1059DV33-12ZSXQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 1M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY7C1059DV33-12ZSXQ FAQ
1.How can I place an order for CY7C1059DV33-12ZSXQ through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1059DV33-12ZSXQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1059DV33-12ZSXQ reliable?
The price and inventory of CY7C1059DV33-12ZSXQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1059DV33-12ZSXQ is usually 5 days.
3.What payment methods are accepted for CY7C1059DV33-12ZSXQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1059DV33-12ZSXQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1059DV33-12ZSXQ?
CY7C1059DV33-12ZSXQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1059DV33-12ZSXQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1059DV33-12ZSXQ?
For technical support, including CY7C1059DV33-12ZSXQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1059DV33-12ZSXQ requirements.
6.How does Aetrix verify that CY7C1059DV33-12ZSXQ is sourced from the original manufacturer or authorized distributors?
All CY7C1059DV33-12ZSXQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1059DV33-12ZSXQ meets industry standards.
7.What is the process for return or replacement of CY7C1059DV33-12ZSXQ?
All CY7C1059DV33-12ZSXQ units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1059DV33-12ZSXQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1059DV33-12ZSXQ part is unused and in its original packaging.
Return procedure for CY7C1059DV33-12ZSXQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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