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Infineon Technologies CY7C10612GE30-10ZSXI
- Part No.:
- CY7C10612GE30-10ZSXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY7C10612GE30-10ZSXI.pdf
- Description:
- IC SRAM 16MBIT PAR 54TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:1,394
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Product details
Overview
CY7C10612GE30-10ZSXI from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16) CMOS static RAM with embedded single-bit error-correcting code (ECC), 10 ns access time, 3.3 V ±0.3 V operation, and ERR output for real-time error indication. It serves as high-reliability on-board data buffer in industrial controllers requiring fault-tolerant memory for firmware state retention.
For engineers reviewing the CY7C10612GE30-10ZSXI datasheet, CY7C10612GE30-10ZSXI pinout, CY7C10612GE30-10ZSXI application, or CY7C10612GE30-10ZSXI equivalent, key selection criteria include ECC-enabled read integrity, TSOP II package compatibility with legacy SRAM footprints, 1.0 V data retention capability, and TTL-compatible I/O signaling for direct microcontroller interfacing.
Technical Context
This SRAM implements full-cycle ECC correction on every read access using on-die syndrome generation and correction logic, with ERR pin assertion confirming successful single-bit correction. The device supports byte-wide writes via independent BLE and BHE controls, enabling partial-word updates without read-modify-write overhead.
It operates in two standby modes: ISB1 (TTL-input active CE power-down) and ISB2 (CMOS-input deep standby), delivering 20 mA typical current at 3.3 V. Address decoding covers A0–A19 (1M locations), with I/O0–I/O15 organized as true 16-bit bidirectional data bus.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1,048,576 × 16 bits) - supports full 16-bit data path without external multiplexing |
| Access Time (tAA) | 10 ns - enables direct interface with 100 MHz microcontrollers without wait states |
| Supply Voltage | 3.3 V ±0.3 V - compatible with standard LVCMOS I/O domains and eliminates level-shifting needs |
| ECC Function | On-die single-bit error correction with ERR output - provides hardware-level data integrity for safety-critical registers |
| Data Retention Voltage | 1.0 V - maintains stored contents during brown-out conditions down to ultra-low VCC |
| Standby Current (ISB2) | 20 mA typical - reduces system power in sleep mode while preserving full memory content |
| Package | 54-pin TSOP II (1.0 mm height) - matches JEDEC MO-143AC footprint for drop-in PCB replacement |
Pinout & Package
54-pin Thin Small Outline Package (TSOP II), 1.0 mm profile, 0.8 mm pitch, compliant with JEDEC MO-143AC. Pin 1 index corner marked; NC pins are unconnected on die.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus selecting one of 1M 16-bit words; no internal address latching |
| I/O0–I/O15 | Bidirectional Data Bus | True 16-bit parallel interface; high-impedance during deselect, write, or OE HIGH |
| CE | Chip Enable | Active-low global enable; initiates automatic power-down when HIGH under CMOS input conditions |
| OE | Output Enable | Active-low control for data bus output drivers; does not affect ECC logic or ERR pin behavior |
| WE | Write Enable | Active-low write strobe; combined with CE LOW to initiate write cycle |
| BLE / BHE | Byte Low/High Enable | Independent 8-bit write masking: BLE controls I/O0–I/O7, BHE controls I/O8–I/O15 |
| ERR | Error Indication Output | Open-drain active-high signal pulsed during read cycle when single-bit error is detected and corrected |
| VCC / VSS | Power / Ground | Single 3.3 V supply rail; separate VSS pins per side reduce ground bounce in high-speed operation |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC logic | Corrects single-bit errors on every read access without CPU intervention or software overhead |
| ERR output pin | Hardware-asserted signal confirms correction event, enabling system-level error logging or fail-safe response |
| Byte-selectable write | BLE/BHE allow independent 8-bit writes to lower or upper byte without disturbing adjacent data |
| Low-voltage data retention | Maintains valid data at 1.0 V supply - supports graceful shutdown during power loss |
| TTL-compatible I/O | Accepts standard 3.3 V TTL logic levels; drives 4 mA high / 8 mA low - interfaces directly with legacy MCUs |
Applications
| Industrial PLC Memory Buffer | Medical Imaging Frame Store |
|---|---|
|
Use Scenario: Storing real-time I/O state and configuration registers in programmable logic controllers operating in harsh EMI environments. IC Role / Device Role / Timing Role: Fault-tolerant SRAM providing ECC-protected storage for critical runtime variables and firmware parameters. Use Value: Prevents silent data corruption in long-duration control loops where undetected bit flips could cause unsafe actuator behavior. |
Use Scenario: Temporary frame buffering in portable ultrasound devices requiring rapid pixel data access and radiation-hardened reliability. IC Role / Device Role / Timing Role: High-speed 16-bit data store bridging ADC output and DSP processing pipeline. Use Value: 10 ns access time enables real-time pixel streaming; ECC ensures diagnostic image integrity across repeated read cycles. |
| Avionics Data Logger | Railway Signaling Controller |
|
Use Scenario: Recording flight parameter snapshots during transient voltage events where power may dip below nominal. IC Role / Device Role / Timing Role: Nonvolatile-capable SRAM retaining mission-critical telemetry even during brown-out conditions. Use Value: 1.0 V data retention allows continued logging through 300 ms dips in 3.3 V rail - meets DO-160 Section 16 Level A requirements. |
Use Scenario: Holding interlocking logic state in wayside signaling systems subject to temperature cycling from –40 °C to +85 °C. IC Role / Device Role / Timing Role: Industrial-grade SRAM ensuring deterministic timing and ECC-verified state persistence over 15+ year service life. Use Value: ISB2 standby current ≤30 mA minimizes thermal load in sealed enclosures; TSOP II package withstands mechanical vibration per EN 50121-3-2. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-reliability SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV102416BLL-10MLI | No embedded ECC; requires external error handling; 10 ns access, same 1M×16 density and 3.3 V supply | Lacks hardware error reporting; suitable only where software ECC or redundancy is implemented at system level | Select when cost sensitivity outweighs need for autonomous error correction and ERR signaling |
| AS6C1008-10TIN | 1M×8 organization; no ECC; 10 ns access; 3.3 V; 32-pin SOJ - different pinout and data width | Requires two devices and external byte merging logic to match 16-bit interface and density | Choose only if board redesign accommodates dual-SOJ layout and added glue logic complexity |
Compared with IS61WV102416BLL-10MLI and AS6C1008-10TIN, CY7C10612GE30-10ZSXI uniquely delivers integrated ECC correction with dedicated ERR output in a pin-compatible 54-pin TSOP II package, eliminating external error-handling circuitry and reducing BOM count for safety-certified designs.
Availability
CY7C10612GE30-10ZSXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical imaging frame stores, and avionics data loggers requiring stable component supply and long-term lifecycle support.
Supply support for CY7C10612GE30-10ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, sensors, and memory solutions for industrial, automotive, and IoT applications.
CY7C10612GE30-10ZSXI belongs to Infineon's legacy Cypress SRAM product line, engineered specifically for high-integrity embedded systems where data reliability, deterministic timing, and industrial temperature operation are mandatory.
FAQ
Does CY7C10612GE30-10ZSXI require external ECC circuitry?
No. The device integrates full ECC encoding, syndrome generation, and correction logic on-die. A single-bit error in any accessed word is automatically corrected during read operations, and the ERR pin signals completion. No external logic or software routines are needed to achieve this functionality.
What is the function of the ERR pin during normal operation?
The ERR pin is an open-drain output that asserts high for one clock cycle during a read access whenever a single-bit error is detected and corrected in the addressed location. If no error occurs, ERR remains low. When unused, it must be left floating per datasheet guidance - no pull-up or pull-down is required.
Can CY7C10612GE30-10ZSXI operate at 2.5 V?
No. The device is specified only for 3.3 V ±0.3 V operation (3.0 V to 3.6 V). Operation outside this range violates DC electrical characteristics and may result in unreliable ECC function, increased standby current, or failure to retain data at 1.0 V during brown-out.
How does byte enable (BLE/BHE) affect write timing?
BLE and BHE are sampled synchronously with WE and CE. When either is LOW during a write cycle, only the corresponding 8-bit segment (I/O0–I/O7 or I/O8–I/O15) is written; the other byte remains unchanged. This occurs within the same tWC (write cycle time) - no additional timing overhead is incurred.
CY7C10612GE30-10ZSXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP II
CY7C10612GE30-10ZSXI FAQ
1.How can I place an order for CY7C10612GE30-10ZSXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C10612GE30-10ZSXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C10612GE30-10ZSXI reliable?
The price and inventory of CY7C10612GE30-10ZSXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C10612GE30-10ZSXI is usually 5 days.
3.What payment methods are accepted for CY7C10612GE30-10ZSXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C10612GE30-10ZSXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C10612GE30-10ZSXI?
CY7C10612GE30-10ZSXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C10612GE30-10ZSXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C10612GE30-10ZSXI?
For technical support, including CY7C10612GE30-10ZSXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C10612GE30-10ZSXI requirements.
6.How does Aetrix verify that CY7C10612GE30-10ZSXI is sourced from the original manufacturer or authorized distributors?
All CY7C10612GE30-10ZSXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C10612GE30-10ZSXI meets industry standards.
7.What is the process for return or replacement of CY7C10612GE30-10ZSXI?
All CY7C10612GE30-10ZSXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C10612GE30-10ZSXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C10612GE30-10ZSXI part is unused and in its original packaging.
Return procedure for CY7C10612GE30-10ZSXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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