Infineon Technologies CY7C10612GE30-10ZSXIT

Overview

CY7C10612GE30-10ZSXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16) CMOS static RAM with embedded single-bit error-correcting code (ECC), 10 ns access time, 3.3 V ±0.3 V operation, and ERR output for real-time error indication. It serves as a high-reliability data buffer in industrial control modules requiring deterministic timing and fault-aware memory.

For engineers reviewing the CY7C10612GE30-10ZSXIT datasheet, CY7C10612GE30-10ZSXIT pinout, CY7C10612GE30-10ZSXIT application, or CY7C10612GE30-10ZSXIT equivalent, this device delivers verified ECC correction, TTL-compatible I/O, low standby current (20 mA typical), and TSOP II packaging for space-constrained embedded systems.

Technical Context

This SRAM implements a synchronous, byte-selectable 1M × 16 architecture with independent BLE/BHE controls enabling concurrent low/high byte writes. Its embedded ECC logic operates transparently during read cycles, asserting the ERR pin only upon detection and correction of a single-bit error in the accessed word.

The device supports two power-down modes: ISB1 (TTL input threshold, 40 mA max) and ISB2 (CMOS input threshold, 30 mA max), with data retention down to 1.0 V. All I/Os enter high-impedance state when CE is HIGH, OE is HIGH, or during write operations.

Key Specifications

Pinout & Package

Package: 54-pin TSOP II (Thin Small Outline Package, Type II), 0.8 mm pitch, body size 22.2 mm × 10.16 mm, lead-free (Pb-free) construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-reliability SRAM applications.

Compared with AS7C31026B-10TIN and IS61WV102416BLL-10MLI, CY7C10612GE30-10ZSXIT uniquely delivers immediate, pin-level error notification without software involvement-critical for hard real-time systems where latency and determinism are non-negotiable.

Availability

CY7C10612GE30-10ZSXIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical imaging frame stores, railway signaling controllers, and avionics data loggers requiring stable component supply across long product lifecycles.

Supply support for CY7C10612GE30-10ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and memory solutions, with global manufacturing and R&D infrastructure.

This device belongs to Infineon's high-reliability SRAM product line, designed specifically for mission-critical embedded systems where data integrity, timing predictability, and long-term supply stability are mandatory.

FAQ

What is the function of the ERR pin on CY7C10612GE30-10ZSXIT?

The ERR pin is an open-drain output that asserts HIGH only when the device detects and corrects a single-bit error during a read cycle. It remains LOW during normal operation or uncorrectable multi-bit errors. No external pull-up is required if unused, as the pin may be left floating per datasheet guidance.

Can CY7C10612GE30-10ZSXIT operate at 2.5 V?

No. The device is specified exclusively for 3.3 V ±0.3 V operation (3.0 V to 3.6 V). Operation outside this range violates absolute maximum ratings and may cause functional failure or accelerated wear. It is not backward-compatible with 2.5 V logic families.

How does byte enable (BLE/BHE) affect write operations?

BLE and BHE are independent active-LOW signals controlling which 8-bit half of the 16-bit data bus is written. When BLE is LOW and BHE is HIGH, only I/O0–I/O7 are updated; when BHE is LOW and BLE is HIGH, only I/O8–I/O15 are updated. Both LOW enables full 16-bit writes.

Is data retention guaranteed below 3.3 V?

Yes. The device retains valid data down to 1.0 V at temperatures up to +85 °C, provided all other conditions (e.g., ambient temperature, timing) remain within specification. This enables graceful shutdown and state preservation during brownout events without external backup capacitors.