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Infineon Technologies CY7C10612GN30-10ZSXI
- Part No.:
- CY7C10612GN30-10ZSXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY7C10612GN30-10ZSXI.pdf
- Description:
- IC SRAM 16MBIT PAR 54TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:2,740
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Product details
Overview
CY7C10612GN30-10ZSXI from Cypress Semiconductor is a 16-Mbit (1,048,576 × 16) asynchronous CMOS static RAM with 10 ns access time, 2.2–3.6 V operation, and dual chip enable (CE1/CE2) architecture. It supports byte-wide writes via BHE/ BLE controls and delivers 90 mA active current at 100 MHz. Used in industrial embedded controllers requiring fast, low-power, non-refresh memory for real-time data buffering.
For engineers reviewing the CY7C10612GN30-10ZSXI datasheet, CY7C10612GN30-10ZSXI pinout, CY7C10612GN30-10ZSXI application, or CY7C10612GN30-10ZSXI equivalent, key selection criteria include tAA = 10 ns access timing, ISB2 = 20 µA typical standby current, dual CE logic compatibility, and 48-ball VFBGA (8 × 9.5 × 1 mm) package footprint.
Technical Context
This SRAM implements a full asynchronous interface with independent high- and low-byte enables (BHE/BLE), enabling selective 8-bit writes without read-modify-write cycles. Its dual CE architecture (CE1 LOW + CE2 HIGH for enable) allows hierarchical memory mapping and seamless expansion across multiple devices.
It operates across two voltage ranges: 1.65–2.2 V and 2.2–3.6 V, with guaranteed 1.0 V data retention and automatic power-down when deselected. Input/output pins are TTL-compatible, and all I/Os enter high-impedance state during deselect, OE HIGH, BHE/BLE HIGH, or write cycles.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16 Mbit (1,048,576 words × 16 bits) - supports 2 MB of byte-addressable storage with parallel 16-bit bus interface |
| Access Time (tAA) | 10 ns - enables direct interfacing with 100 MHz microcontrollers without wait states |
| Supply Voltage Range | 2.2 V to 3.6 V - compatible with modern low-voltage SoCs and mixed-voltage system designs |
| Active Current (ICC) | 90 mA at 100 MHz - defines peak power draw during sustained burst reads/writes |
| Standby Current (ISB2) | 20 µA typical - ensures ultra-low power consumption during idle periods in battery-backed systems |
| Data Retention Voltage | 1.0 V - guarantees memory state integrity during brown-out or backup-battery operation |
| Input/Output Compatibility | TTL-compatible - eliminates need for level-shifting circuitry when interfacing with legacy 5 V logic families |
Pinout & Package
Package: 48-ball VFBGA (8 × 9.5 × 1 mm), Package/Grade ID BVXI, RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1M-word addressing; A19 is MSB |
| I/O0–I/O7 | Low-Byte Data I/O | Bi-directional 8-bit data path enabled by BLE = LOW during read/write |
| I/O8–I/O15 | High-Byte Data I/O | Bi-directional 8-bit data path enabled by BHE = LOW during read/write |
| CE1, CE2 | Dual Chip Enable Inputs | Active-LOW CE1 and active-HIGH CE2 form logical CE; enables hierarchical memory decoding |
| WE | Write Enable | Active-LOW control initiating write cycle; latches data on rising edge of WE |
| OE | Output Enable | Active-LOW control enabling output drivers; decoupled from WE for true three-state control |
| BLE, BHE | Byte Low/High Enable | Independent 8-bit write masking; permits partial-word updates without external logic |
| VCC, VSS | Power Supply | Single 2.2–3.6 V supply; dual VCC/VSS pairs ensure stable core and I/O rail distribution |
Key Features
| Feature | Design Value |
|---|---|
| 10 ns access time | Enables zero-wait-state operation with 100 MHz processors, reducing system latency in real-time control loops |
| Dual chip enable (CE1/CE2) | Supports multi-SRAM bank decoding and seamless memory expansion without external gating logic |
| Byte-wide write control (BHE/BLE) | Eliminates need for external byte-mask logic or read-modify-write sequences during partial-word updates |
| 1.0 V data retention | Preserves memory contents during deep sleep or backup-battery mode, critical for industrial logging applications |
| 20 µA typical standby current | Reduces quiescent power in always-on subsystems such as sensor hubs or watchdog co-processors |
Applications
| Industrial PLC Data Buffering | Medical Imaging Frame Store |
|---|---|
Use Scenario: Real-time acquisition and temporary storage of sensor inputs and actuator commands in programmable logic controllers. IC Role / Device Role / Timing Role: Asynchronous SRAM providing deterministic 10 ns read/write response for cyclic I/O scanning at 1 kHz update rates. Use Value: Eliminates DRAM refresh overhead and guarantees consistent latency under variable load, improving control loop jitter performance. | Use Scenario: Storing uncompressed grayscale image frames (e.g., 1024 × 768 @ 16 bpp) during acquisition in portable ultrasound devices. IC Role / Device Role / Timing Role: High-bandwidth frame buffer interfacing directly with image sensor controller and display engine via 16-bit parallel bus. Use Value: 10 ns access enables full-frame readout within 15 ms, meeting real-time display pipeline deadlines without FIFO bottlenecks. |
| Avionics Sensor Fusion Cache | Test Equipment Pattern Memory |
Use Scenario: Caching synchronized inertial measurement unit (IMU), GPS, and barometer data prior to Kalman filter computation in flight control units. IC Role / Device Role / Timing Role: Low-power, radiation-tolerant SRAM operating at 2.5 V with 1.0 V data retention for safe-mode memory preservation. Use Value: 20 µA ISB2 and 1.0 V retention support extended safe-hold during power transients, maintaining state across brown-out events. | Use Scenario: Storing digital stimulus/response patterns for automated boundary-scan testing of high-speed PCB assemblies. IC Role / Device Role / Timing Role: Deterministic-access pattern memory accessed by FPGA-based test sequencer running at 100 MHz clock domain. Use Value: 10 ns tAA ensures precise pattern launch timing, eliminating setup/hold violations in 100 Mbps JTAG TCK environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV102416BLL-10MLI | 10 ns access, same density and voltage range; uses single CE and no BHE/BLE | Lacks byte-select capability; requires external logic for partial-word writes | Select when system design already includes byte-enable logic or prioritizes pin count reduction over write flexibility |
| AS6C1008-10TIN | 10 ns access, 1M × 8 organization; 2.7–3.6 V only; no data retention below 2.7 V | Requires two devices for 16-bit bus; incompatible with sub-2.7 V operation or 1.0 V retention use cases | Select only for cost-sensitive 8-bit bus systems where voltage margin and retention are not required |
Compared with IS61WV102416BLL-10MLI and AS6C1008-10TIN, CY7C10612GN30-10ZSXI uniquely combines 10 ns speed, dual CE decode, independent BHE/BLE control, and 1.0 V data retention-making it optimal for space-constrained, low-voltage, byte-select-critical industrial and medical systems.
Availability
CY7C10612GN30-10ZSXI is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, avionics sensor fusion modules, and automated test equipment requiring stable component supply and long-term obsolescence management.
Supply support for CY7C10612GN30-10ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.
CY7C10612GN30-10ZSXI belongs to the CY7C1061x GN/2GN family of high-speed, low-voltage asynchronous SRAMs engineered for deterministic timing and minimal power in real-time embedded systems.
FAQ
What is the maximum operating frequency supported by CY7C10612GN30-10ZSXI?
The device does not operate on a clock signal-it is an asynchronous SRAM. Its 10 ns access time (tAA) supports reliable interface with microcontrollers and FPGAs running up to 100 MHz, provided setup/hold times are met. Maximum toggle rate depends on cycle time (tRC ≥ 15 ns), not clock frequency.
Does CY7C10612GN30-10ZSXI support single-chip-enable operation?
No-this variant (CY7C10612GN) is specifically the dual CE version (CE1 and CE2). The single CE variant is CY7C1061GN. Pinout, logic behavior, and ordering codes differ; mixing them risks incorrect enable logic and bus contention.
Can CY7C10612GN30-10ZSXI retain data at 1.0 V while powered by a backup battery?
Yes-data retention is guaranteed down to 1.0 V with ISB2 ≤ 30 µA at that voltage. The device enters automatic power-down mode when CE1 is HIGH or CE2 is LOW, minimizing current draw during retention mode without external control.
Is the 48-ball VFBGA package (BVXI) compatible with standard reflow profiles?
Yes-the BVXI package is RoHS-compliant and qualified for JEDEC J-STD-020D moisture sensitivity level 3. Recommended peak reflow temperature is 260 °C for ≤ 30 seconds; thermal resistance θJA = 31.5 °C/W confirms effective heat dissipation under typical board layouts.
CY7C10612GN30-10ZSXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP II
CY7C10612GN30-10ZSXI FAQ
1.How can I place an order for CY7C10612GN30-10ZSXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C10612GN30-10ZSXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C10612GN30-10ZSXI reliable?
The price and inventory of CY7C10612GN30-10ZSXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C10612GN30-10ZSXI is usually 5 days.
3.What payment methods are accepted for CY7C10612GN30-10ZSXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C10612GN30-10ZSXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C10612GN30-10ZSXI?
CY7C10612GN30-10ZSXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C10612GN30-10ZSXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C10612GN30-10ZSXI?
For technical support, including CY7C10612GN30-10ZSXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C10612GN30-10ZSXI requirements.
6.How does Aetrix verify that CY7C10612GN30-10ZSXI is sourced from the original manufacturer or authorized distributors?
All CY7C10612GN30-10ZSXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C10612GN30-10ZSXI meets industry standards.
7.What is the process for return or replacement of CY7C10612GN30-10ZSXI?
All CY7C10612GN30-10ZSXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C10612GN30-10ZSXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C10612GN30-10ZSXI part is unused and in its original packaging.
Return procedure for CY7C10612GN30-10ZSXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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