Infineon Technologies CY7C10612GN30-10ZSXIT

Overview

CY7C10612GN30-10ZSXIT from Cypress Semiconductor is a 16-Mbit (1,048,576 × 16) asynchronous CMOS static RAM with 10 ns access time, 2.2–3.6 V operation, dual chip enable (CE1/CE2), and byte-wide write control via BHE/BLE. It delivers 90 mA active current at 100 MHz and supports data retention down to 1.0 V, deployed in industrial embedded systems requiring nonvolatile SRAM backup and fast random-access storage.

For engineers reviewing the CY7C10612GN30-10ZSXIT datasheet, CY7C10612GN30-10ZSXIT pinout, CY7C10612GN30-10ZSXIT application, or CY7C10612GN30-10ZSXIT equivalent, key selection criteria include tAA = 10 ns timing, dual CE architecture for hierarchical memory mapping, 48-ball VFBGA (8 × 9.5 × 1 mm) package compatibility, and low ISB2 = 20 µA standby current under CMOS deselection.

Technical Context

This SRAM implements a fully asynchronous interface with independent high- and low-byte write enables (BHE/BLE), enabling partial-word writes without read-modify-write cycles. Its dual chip enable logic (CE1 LOW + CE2 HIGH = active) allows seamless integration into multi-bank memory systems with hierarchical address decoding.

The device uses standard TTL-compatible I/O levels and supports automatic power-down when deselected, reducing ICC to ISB2 = 20 µA (typ) under CMOS input conditions. Data retention operates at VCC = 1.0 V with no clock or refresh required, making it suitable for battery-backed hold modes.

Key Specifications

Pinout & Package

Package: 48-ball VFBGA (8 × 9.5 × 1 mm), Package/Grade ID BVXI, RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Compared with IS61WV102416BLL-10MLI and AS6C1008-10TIN, the CY7C10612GN30-10ZSXIT offers broader voltage flexibility, true dual CE for bank isolation, and native byte-write capability-critical for deterministic real-time systems where partial-word updates and power domain control are mandatory.

Availability

CY7C10612GN30-10ZSXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame storage, avionics sensor fusion caching, and automated test equipment pattern memory requiring stable component supply across extended temperature and voltage ranges.

Supply support for CY7C10612GN30-10ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and connectivity solutions for industrial, automotive, and consumer applications.

The CY7C10612GN series belongs to Cypress's high-speed asynchronous SRAM product line, engineered for deterministic timing, low-power standby, and robust operation in mission-critical embedded systems with demanding thermal and reliability requirements.

FAQ

What is the exact package type and footprint for CY7C10612GN30-10ZSXIT?

The CY7C10612GN30-10ZSXIT uses a 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) with dimensions 8 mm × 9.5 mm × 1.0 mm and ball pitch of 0.8 mm. Its package identifier is BVXI, and it features a dual chip enable (CE1/CE2) pinout per Figure 1 in datasheet 001-93680 Rev. *C. The footprint requires 0.3 mm solder mask defined pads and controlled-depth reflow profiling.

Does this SRAM require an external clock or refresh circuitry?

No. The CY7C10612GN30-10ZSXIT is a fully asynchronous static RAM and operates without any clock signal or refresh cycles. All operations are controlled solely by address, CE1/CE2, WE, OE, BHE, and BLE transitions. This eliminates timing jitter concerns and simplifies system design for deterministic real-time applications.

Can BHE and BLE be asserted simultaneously for full 16-bit access?

Yes. When both BHE and BLE are driven LOW, the entire 16-bit data bus (I/O0–I/O15) becomes active for simultaneous read or write. This mode supports full-word transfers while retaining the option to perform selective byte operations-enabling software-optimized memory management without hardware overhead.

What is the maximum junction temperature and thermal resistance for this VFBGA package?

The 48-ball VFBGA package has a junction-to-ambient thermal resistance (θJA) of 31.50 °C/W under standard JEDEC 4-layer board conditions. The absolute maximum junction temperature is +125 °C. Derating is required above +85 °C ambient; sustained operation at full speed above 100 °C ambient requires thermal simulation and board-level copper pour optimization.