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Infineon Technologies CY7C1061AV33-10BAC
- Part No.:
- CY7C1061AV33-10BAC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 60-TFBGA
- Datasheet:
-
CY7C1061AV33-10BAC.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 60FBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
CY7C1061AV33-10BAC from Cypress Semiconductor is a 16-Mbit (1M × 16) high-speed CMOS static RAM with 10 ns access time, 3.3 V ±0.3 V operation, automatic CE power-down, TTL-compatible I/O, and dual chip enable (CE1/CE2) for flexible memory expansion. It supports byte-wide writes via BHE/ BLE and operates across industrial temperature range (–40°C to +85°C) in a 60-ball FBGA package.
For engineers reviewing the CY7C1061AV33-10BAC datasheet, CY7C1061AV33-10BAC pinout, CY7C1061AV33-10BAC application, or CY7C1061AV33-10BAC equivalent, key selection considerations include tAA = 10 ns read timing, ISB2 = 50 mA standby current under CMOS input conditions, 2.0 V data retention capability, and FBGA pin compatibility with space-constrained embedded controllers and industrial PLCs.
Technical Context
The CY7C1061AV33-10BAC implements a fully asynchronous SRAM architecture with independent byte-enable control (BHE/BLE), enabling selective upper- or lower-byte writes without affecting adjacent data. Its dual CE interface (CE1 active-low, CE2 active-high) allows hierarchical memory banking and seamless expansion beyond 16-bit data buses.
It features automatic power-down when deselected (CE1 HIGH / CE2 LOW), delivering ISB2 = 50 mA at VCC = 3.3 V with CMOS-level inputs. All I/O pins enter high-impedance state during deselect, OE HIGH, write cycles, or disabled byte enables - ensuring clean bus sharing in multi-peripheral systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| tAA | 10 ns maximum address-to-data valid delay - enables direct interfacing with 100 MHz microcontrollers without wait states. |
| VCC | 3.3 V ±0.3 V - compatible with standard LVTTL and LVCMOS logic families; requires no level-shifting circuitry. |
| Memory organization | 1,048,576 × 16 bits - provides 2 MiB of fast, nonvolatile-critical storage for real-time buffering and firmware scratchpad use. |
| Data retention voltage | 2.0 V minimum - maintains stored contents during brown-out or controlled low-power suspend modes. |
| ISB2 standby current | 50 mA max at VCC = 3.3 V with CMOS inputs - ensures ultra-low quiescent power in always-on industrial monitoring nodes. |
| Package | 60-ball fine-pitch BGA (10 mm × 13 mm, 0.8 mm pitch) - supports high-density PCB layouts with improved thermal dissipation vs. TSOP II. |
| Operating temperature | –40°C to +85°C - qualified for industrial automation, motor drives, and outdoor telecom equipment. |
Pinout & Package
Package: 60-ball fine-pitch ball grid array (FBGA), JEDEC MO-249 compliant, 10 mm × 13 mm body, 0.8 mm ball pitch, RoHS-compliant (Pb-free).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address inputs | 20-bit address bus supporting full 1M-word addressing; A19 selects highest address block. |
| IO0–IO7 | Data I/O (lower byte) | Bidirectional 8-bit data path enabled only when BLE = LOW; high-impedance when BLE = HIGH or device deselected. |
| IO8–IO15 | Data I/O (upper byte) | Bidirectional 8-bit data path enabled only when BHE = LOW; isolated from lower byte for independent access. |
| CE1, CE2 | Chip enable pair | Active-low CE1 and active-high CE2 must both be asserted (CE1 = LOW, CE2 = HIGH) to enable device; enables bank-select decoding. |
| WE | Write enable | LOW initiates write cycle; combined with CE1/CE2 and BHE/BLE determines byte write scope and timing window. |
| OE | Output enable | LOW enables output drivers; HIGH forces IOx into high-Z regardless of CE/WE state - critical for bus arbitration. |
| VCC, VSS | Power supply | Two dedicated VCC balls and four VSS balls provide low-impedance power delivery and noise suppression for stable 10 ns operation. |
| DNU | Do Not Use | Ball A16 must be left floating or tied to VSS; improper connection risks functional failure per datasheet Note 2. |
| NC | No Connect | 12 NC balls (e.g., A1–A5, C1–C6) are unconnected on die - must remain unpopulated or grounded per layout guidelines. |
Key Features
| Feature | Design Value |
|---|---|
| 10 ns access time with zero wait-state support | Enables direct attachment to high-speed microcontrollers (e.g., ARM Cortex-M7, TI C2000) without glue logic or timing compensation. |
| Dual chip enable (CE1/CE2) logic | Allows hierarchical memory mapping - e.g., CE2 driven by upper address bit for 2 MB bank selection while CE1 handles local decode. |
| Independent byte write control (BHE/BLE) | Permits atomic 8-bit updates to upper/lower bytes without read-modify-write cycles - essential for protocol stack buffers and register overlays. |
| Automatic CE power-down mode | Reduces ICC to 50 mA (ISB2) when CE1 HIGH/CE2 LOW - eliminates need for external power gating in battery-backed systems. |
| 2.0 V data retention | Maintains SRAM contents during VCC drop to 2.0 V - supports graceful shutdown, energy harvesting wake-up, and brown-out recovery sequences. |
Applications
| Industrial PLC Data Buffering | Automotive Engine Control Unit (ECU) Scratchpad |
|---|---|
|
Use Scenario: Real-time acquisition of sensor data (CAN, analog ADC) and deterministic execution of control loops at 10 kHz sampling rate. IC Role / Device Role / Timing Role: High-speed scratchpad memory holding intermediate PID calculations, fault logs, and calibration tables. Use Value: 10 ns tAA ensures loop latency remains below 1 µs; 2.0 V retention preserves last-known-safe state during ignition cycling. |
Use Scenario: Storing runtime variables, diagnostic codes, and adaptive learning parameters in engine management systems operating at –40°C to +85°C. IC Role / Device Role / Timing Role: Nonvolatile-critical SRAM buffer between MCU core and flash memory, minimizing flash wear from frequent writes. Use Value: Dual CE interface enables isolation from main bus during CAN message handling; ISB2 = 50 mA extends battery life in sleep mode. |
| Medical Imaging Frame Buffer | Telecom Baseband Signal Processing |
|
Use Scenario: Temporary storage of digitized ultrasound or X-ray frames prior to compression and transmission over Ethernet. IC Role / Device Role / Timing Role: Burst-mode frame buffer interfaced to FPGA-based image pipeline with parallel 16-bit data bus. Use Value: 60-ball FBGA minimizes trace length and signal skew; BHE/BLE allows simultaneous write of pixel LSBs/MSBs to match sensor output format. |
Use Scenario: Holding FFT coefficients, filter taps, and packet headers in LTE/5G small-cell baseband processors. IC Role / Device Role / Timing Role: Low-latency working memory for DSP cores requiring deterministic 10 ns read/write cycles. Use Value: TTL-compatible I/O eliminates level shifters; tHZOE = 6 ns ensures clean bus release before next DMA transfer begins. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61LV102416AL-10MLI | Same 1M × 16 organization, 10 ns speed, but uses 54-pin TSOP II only; no FBGA option; ISB = 60 mA (vs. 50 mA). | Lacks 60-ball FBGA footprint - unsuitable for space-constrained designs requiring fine-pitch BGA routing. | Select when board layout prioritizes TSOP II reworkability and cost over density; verify thermal derating at +85°C. |
| Winbond W9812G2JH-10 | SDRAM (not SRAM); requires refresh controller; 10 ns random access not guaranteed; 32-bit bus width only. | Not functionally interchangeable - introduces timing complexity, controller overhead, and burst-only access patterns. | Avoid for true SRAM drop-in replacement; consider only if system already includes SDRAM controller and bandwidth >2 GB/s is required. |
Compared with IS61LV102416AL-10MLI, CY7C1061AV33-10BAC offers superior packaging flexibility and lower standby current; versus W9812G2JH-10, it delivers deterministic latency and zero-refresh operation critical for hard real-time control.
Availability
CY7C1061AV33-10BAC is available at Aetrix Electronics and suitable for industrial PLC data buffering, automotive ECU scratchpad memory, medical imaging frame storage, and telecom baseband signal processing requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for CY7C1061AV33-10BAC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, PSoC programmable systems-on-chip, and USB/USB-C solutions for industrial, automotive, and consumer markets.
The CY7C1061AV33 belongs to Cypress's legacy high-speed parallel SRAM product line, engineered specifically for deterministic, low-latency data buffering in real-time embedded systems where refresh-free operation and precise timing control are mandatory.
FAQ
What is the minimum VCC required to retain data in CY7C1061AV33-10BAC?
The device guarantees data retention down to 2.0 V VCC, as confirmed in the DC Electrical Characteristics table (VCCDR = 2.0 V). This applies across the full industrial temperature range (–40°C to +85°C) and does not require clock or refresh signals. Retention mode activates automatically when VCC drops below operational threshold while CE1/CE2 remain inactive.
Can CY7C1061AV33-10BAC be used with 2.5 V logic interfaces?
No - the device requires 3.3 V ±0.3 V supply and specifies VIH = 2.0 V minimum and VIL = 0.8 V maximum. Driving inputs with 2.5 V logic violates the VIH requirement (2.0 V min at VCC = 3.3 V), risking unreliable operation. Level translation is mandatory for 2.5 V host systems.
Does the 60-ball FBGA package support reflow soldering per J-STD-020?
Yes - the CY7C1061AV33-10BAC FBGA package is qualified for lead-free reflow per J-STD-020D, with peak temperature up to 260°C and time above liquidus (TAL) ≤ 60 seconds. The recommended profile includes ramp rate ≤ 3°C/s, preheat 150–200°C for 90–120 s, and cooling rate ≤ 6°C/s.
How does automatic power-down behave when CE2 is held HIGH but CE1 is HIGH?
When CE1 = HIGH and CE2 = HIGH, the device enters power-down mode per Truth Table row "Power Down Standby (ISB)" - drawing ISB1 = 70 mA (TTL inputs) or ISB2 = 50 mA (CMOS inputs). This is distinct from deselection (CE1 HIGH / CE2 LOW), which yields identical current draw but different internal state transitions.
CY7C1061AV33-10BAC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 60-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 60-FBGA (8x20)
CY7C1061AV33-10BAC FAQ
1.How can I place an order for CY7C1061AV33-10BAC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1061AV33-10BAC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1061AV33-10BAC reliable?
The price and inventory of CY7C1061AV33-10BAC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061AV33-10BAC is usually 5 days.
3.What payment methods are accepted for CY7C1061AV33-10BAC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061AV33-10BAC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1061AV33-10BAC?
CY7C1061AV33-10BAC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1061AV33-10BAC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1061AV33-10BAC?
For technical support, including CY7C1061AV33-10BAC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061AV33-10BAC requirements.
6.How does Aetrix verify that CY7C1061AV33-10BAC is sourced from the original manufacturer or authorized distributors?
All CY7C1061AV33-10BAC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061AV33-10BAC meets industry standards.
7.What is the process for return or replacement of CY7C1061AV33-10BAC?
All CY7C1061AV33-10BAC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061AV33-10BAC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1061AV33-10BAC part is unused and in its original packaging.
Return procedure for CY7C1061AV33-10BAC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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