Infineon Technologies CY7C1061AV33-10BAXI

Overview

CY7C1061AV33-10BAXI from Cypress Semiconductor is a 16-Mbit (1,048,576 × 16) asynchronous CMOS static RAM with 3.3 V ±0.3 V supply, 10 ns access time (tAA), 2.0 V data retention, and dual chip enable (CE1/CE2) for bank selection in memory expansion. It operates across –40°C to +85°C and supports byte-wide writes via BHE/BLE controls in industrial embedded systems requiring deterministic timing and low-power standby.

For engineers reviewing the CY7C1061AV33-10BAXI datasheet, CY7C1061AV33-10BAXI pinout, CY7C1061AV33-10BAXI application, or CY7C1061AV33-10BAXI equivalent, key selection criteria include tAA = 10 ns read latency, ISB2 = 50 mA CMOS power-down current, FBGA-60 package compatibility, and byte-selectable I/O (IO0–IO7 / IO8–IO15) for 16-bit bus partitioning.

Technical Context

This SRAM implements a fully asynchronous interface with independent byte enables (BHE/BLE) enabling simultaneous upper- and lower-byte write operations without bus contention. Address decoding uses a 20-bit address bus (A0–A19) to access the 1M-word array, with CE1/CE2 logic supporting hierarchical memory mapping in multi-bank architectures.

Power management includes two automatic standby modes: ISB1 (TTL-input triggered, 70 mA max) and ISB2 (CMOS-input triggered, 50 mA max), activated when CE2 ≤ 0.3 V and CE1 is inactive. Data retention at 2.0 V allows operation during brown-out conditions while preserving contents.

Key Specifications

Pinout & Package

The CY7C1061AV33-10BAXI is packaged in a 60-ball fine-pitch ball grid array (FBGA) per package diagram 51-85162, with 0.8 mm pitch and 10 mm × 13 mm body size. Pin assignments follow JEDEC MO-245 standards, with NC (no-connect) and DNU (do-not-use) balls explicitly defined in the datasheet.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Compared with AS6C1008-10TIN and IS61LV102416-10ML, the CY7C1061AV33-10BAXI uniquely combines FBGA packaging, dual CE architecture, and 2.0 V data retention-enabling compact, expandable, and brown-out-resilient memory subsystems in industrial and automotive platforms.

Availability

CY7C1061AV33-10BAXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, automotive infotainment caches, and medical imaging frame stores requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1061AV33-10BAXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets, with headquarters in San Jose, CA.

The CY7C1061AV33 belongs to Cypress's high-speed asynchronous SRAM product line, engineered for deterministic timing, low-power standby, and robust operation in mission-critical embedded systems requiring nonvolatile-like data persistence without refresh overhead.

FAQ

What is the minimum VCC required to initiate a read or write operation?

The device requires VCC ≥ 3.0 V to begin normal operation. After power reaches this threshold, a 1 ms tpower delay must elapse before any access cycle may start. This ensures internal voltage regulation stabilizes prior to memory access.

Can CY7C1061AV33-10BAXI operate with mixed voltage I/O (e.g., 1.8 V address lines)?

No. All inputs-including address, control, and byte-enable signals-must remain within the specified VIH (2.0 V min) and VIL (0.8 V max) ranges referenced to VCC = 3.3 V. Driving inputs below VIH risks metastability or incomplete activation of internal logic.

How does the CE2 pin affect power states beyond chip disable?

When CE2 is driven LOW (≤ 0.3 V), the device enters ISB2 standby mode regardless of CE1 state, reducing ICC to ≤ 50 mA. This is distinct from CE1-driven selection and provides a dedicated hardware-controlled low-power entry point independent of address/control timing.

Is the 60-ball FBGA package RoHS-compliant and lead-free?

Yes. The "X" suffix in CY7C1061AV33-10BAXI explicitly denotes Pb-free (RoHS-compliant) construction per Cypress's ordering nomenclature. The FBGA package uses matte tin surface finish and meets JEDEC J-STD-020 moisture sensitivity level 3 requirements.