Infineon Technologies CY7C1061AV33-10ZXC

Overview

CY7C1061AV33-10ZXC from Cypress Semiconductor is a 16-Mbit (1,048,576 × 16) high-speed CMOS static RAM with 10 ns access time, 3.3 V ±0.3 V operation, and automatic CE power-down mode. It supports byte-wide writes via independent BHE/ BLE controls and delivers TTL-compatible I/O for seamless integration into legacy and mixed-voltage memory subsystems, such as industrial PLC data buffers and telecom line card frame storage.

For engineers reviewing the CY7C1061AV33-10ZXC datasheet, CY7C1061AV33-10ZXC pinout, CY7C1061AV33-10ZXC application, or CY7C1061AV33-10ZXC equivalent, key selection criteria include tAA = 10 ns read timing, ISB2 = 50 mA CMOS standby current, dual chip enable (CE1/CE2) logic, 2.0 V data retention voltage, and Pb-free 54-pin TSOP II package compatibility.

Technical Context

This SRAM implements a full synchronous interface with independent byte enables (BHE/BLE) enabling selective upper- or lower-byte writes without external logic. Its dual CE architecture (CE1 active-low, CE2 active-high) allows hierarchical memory banking and easy expansion in multi-chip systems.

The device uses internal voltage regulation to maintain stable core operation during 3.3 V supply transients and supports four distinct operational modes-active read/write, output-disabled, high-impedance deselect, and automatic power-down-governed by precise timing relationships among CE1, CE2, OE, WE, BHE, and BLE.

Key Specifications

Pinout & Package

Package: 54-pin Thin Small Outline Package Type II (TSOP II), Pb-free, body size 10.16 mm × 20.00 mm × 1.20 mm, JEDEC MO-141AC compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Compared with IS61LV102416-10ML and R1LV1616RSA-10SI, the CY7C1061AV33-10ZXC provides unique dual CE and independent byte enables - reducing external component count and enabling faster partial-word writes in real-time control and telecom applications.

Availability

CY7C1061AV33-10ZXC is available at Aetrix Electronics and suitable for industrial PLC data buffers, telecom line card frame storage, and medical imaging subsystem caches requiring stable component supply and RoHS-compliant packaging.

Supply support for CY7C1061AV33-10ZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications markets, with headquarters in San Jose, CA.

The CY7C1061AV33 belongs to Cypress's high-speed parallel SRAM product line, engineered specifically for deterministic, low-latency memory access in real-time embedded systems where bus timing predictability and power-aware standby modes are essential.

FAQ

What is the minimum VCC required to retain data in CY7C1061AV33-10ZXC?

The device guarantees data retention down to 2.0 V VCC, as specified in the DC Electrical Characteristics table. This allows the SRAM to hold memory contents during brown-out conditions or low-power suspend states without external backup power, provided all other pins remain within their defined voltage ranges and no active cycles are initiated.

Can CY7C1061AV33-10ZXC operate with only CE1 asserted, ignoring CE2?

No - the functional truth table requires CE1 = LOW *and* CE2 = HIGH for any active read or write operation. If CE2 is not held HIGH (e.g., left floating or pulled LOW), the device enters power-down mode regardless of CE1 state. CE2 must be actively driven to VIH (≥2.0 V) for normal operation.

Does the 54-pin TSOP II package support reflow soldering per J-STD-020?

Yes - the Pb-free 54-pin TSOP II package (ZXC suffix) complies with JEDEC J-STD-020D moisture sensitivity level 3 and is qualified for standard lead-free reflow profiles with peak temperature up to 260°C. Bake requirements and floor life follow MSL3 guidelines per the Cypress packaging specification document.

How does automatic power-down behave when CE2 is driven to 0.2 V?

When CE2 ≤ 0.3 V and CE1 > VCC – 0.3 V (e.g., CE1 ≥ 3.0 V), the device enters ISB2 power-down mode with typical current draw of 50 mA. At CE2 = 0.2 V, this condition is met, and the SRAM disables outputs, ceases internal refresh, and maintains data integrity at 2.0 V VCC - confirmed by the "Automatic CE Power-down Current - CMOS Inputs" test condition in the datasheet.