Infineon Technologies CY7C1061AV33-10ZXCT

Overview

CY7C1061AV33-10ZXCT from Cypress Semiconductor is a 16-Mbit (1,048,576 × 16) asynchronous CMOS static RAM with 10 ns access time, 3.3 V ±0.3 V supply, TTL-compatible I/O, and dual chip enable (CE1/CE2) for seamless memory expansion in embedded controllers and industrial data buffers.

For engineers reviewing the CY7C1061AV33-10ZXCT datasheet, CY7C1061AV33-10ZXCT pinout, CY7C1061AV33-10ZXCT application, or CY7C1061AV33-10ZXCT equivalent, key selection factors include byte-level write control via BHE/ BLE, automatic CE-based power-down (ISB2 = 50 mA), 2.0 V data retention, and TSOP II package compatibility with legacy PCB layouts.

Technical Context

This SRAM implements a full asynchronous interface with independent byte enables (BHE/BLE) enabling selective upper- or lower-byte writes without external logic. Address-to-data valid (tAA = 10 ns) and read cycle time (tRC = 10 ns) are guaranteed under commercial temperature range (0°C to +70°C) at VCC = 3.3 V ±0.3 V.

Power management includes two standby modes: ISB1 (70 mA, TTL-input CE threshold) and ISB2 (50 mA, CMOS-input CE threshold), triggered by CE2 ≤ VIL or CE2 ≤ 0.3 V respectively. Input/output pins enter high-impedance state during deselection, OE HIGH, or active write cycles.

Key Specifications

Pinout & Package

Package: 54-pin TSOP II (Pb-free), 14 mm × 20 mm body, 0.8 mm pitch, JEDEC MO-143AC compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Compared with IS61LV102416AL-10TLI and MC10EL1648DTG, CY7C1061AV33-10ZXCT uniquely delivers integrated byte-select SRAM functionality with zero external logic, making it optimal for space-constrained industrial controllers needing deterministic 10 ns access and 2.0 V data retention.

Availability

CY7C1061AV33-10ZXCT is available at Aetrix Electronics and suitable for industrial PLC data buffers, automotive engine control units, and medical imaging frame stores requiring stable component supply and long-term manufacturability.

Supply support for CY7C1061AV33-10ZXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

The CY7C1061AV33 belongs to Cypress's high-speed asynchronous SRAM product line, engineered for deterministic timing, low-power standby, and robust operation in harsh environments with wide temperature ranges.

FAQ

What is the minimum VCC required for data retention?

The CY7C1061AV33-10ZXCT retains stored data down to 2.0 V on VCC, verified per datasheet specification. This allows continued memory integrity during brown-out conditions or battery-backed suspend modes without external backup circuitry.

Can CE1 and CE2 be tied together for simplified control?

No - CE1 is active-LOW and CE2 is active-HIGH; tying them together violates the required logic polarity. CE2 must be held HIGH for normal operation, while CE1 controls chip selection. Using both enables hierarchical addressing in multi-chip systems.

Does this SRAM require an external clock signal?

No - the CY7C1061AV33-10ZXCT is fully asynchronous. All operations are controlled by edge- or level-sensitive signals (CE1, CE2, WE, OE, BHE, BLE); no clock input or timing reference is needed.

How does the automatic power-down mode activate?

Automatic power-down activates when CE2 is driven LOW (≤ VIL) while CE1 is HIGH, placing the device in ISB1 (70 mA) mode. If CE2 is driven to ≤ 0.3 V with CMOS-compatible thresholds, ISB2 (50 mA) is entered - both modes disable outputs and reduce internal activity.