Infineon Technologies CY7C1061AV33-10ZXIT

Overview

CY7C1061AV33-10ZXIT from Cypress Semiconductor is a 16-Mbit (1M × 16) asynchronous CMOS static RAM with 10 ns access time, 3.3 V ±0.3 V operation, TTL-compatible I/O, and dual chip enable (CE1/CE2) for flexible memory expansion in embedded controllers and industrial data buffers.

For engineers reviewing the CY7C1061AV33-10ZXIT datasheet, CY7C1061AV33-10ZXIT pinout, CY7C1061AV33-10ZXIT application, or CY7C1061AV33-10ZXIT equivalent, key selection criteria include tAA = 10 ns read timing, automatic CE power-down current of 50 mA (ISB2), byte-level write control via BLE/BHE, and Pb-free 54-pin TSOP II packaging for space-constrained PCB layouts.

Technical Context

This SRAM implements a full 1,048,576 × 16-bit array with independent byte-write capability: BLE controls IO0–IO7, BHE controls IO8–IO15. Read operations require CE1 LOW/CE2 HIGH, OE LOW, and WE HIGH; writes require CE1 LOW/CE2 HIGH and WE LOW.

It supports three power states: active (ICC ≤ 275 mA), automatic CE power-down (ISB2 = 50 mA at CMOS input levels), and data retention at 2.0 V (VCCDR). Input/output pins enter high-impedance state during deselection, output disable, or write cycles - ensuring clean bus sharing in multi-device systems.

Key Specifications

Pinout & Package

The CY7C1061AV33-10ZXIT is packaged in a Pb-free 54-pin Thin Small Outline Package Type II (TSOP II), measuring 18.4 mm × 10.16 mm × 1.2 mm, with gull-wing leads and JEDEC MO-143AC compliance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Compared with IS61WV102416BLL-10MLI and W9825G6JH-10, the CY7C1061AV33-10ZXIT provides guaranteed asynchronous timing, dual-CE robustness for industrial noise environments, and seamless byte-write control - making it optimal for deterministic real-time buffering where predictability outweighs lowest-cost alternatives.

Availability

CY7C1061AV33-10ZXIT is available at Aetrix Electronics and suitable for industrial PLC data buffers, medical imaging frame stores, and avionics display controllers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1061AV33-10ZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and mixed-signal ICs for industrial, automotive, and communications markets, with headquarters in San Jose, CA.

The CY7C1061AV33 belongs to Cypress's high-speed parallel SRAM product line, engineered specifically for deterministic, low-latency data buffering in real-time control systems where refresh-free operation and precise timing control are mandatory.

FAQ

What is the minimum VCC required for data retention on CY7C1061AV33-10ZXIT?

The device retains stored data down to 2.0 V (VCCDR), as specified in the DC Electrical Characteristics table. This allows operation in brown-out scenarios where main supply drops temporarily but remains above 2.0 V - no external backup battery or capacitor is needed for short-duration hold.

Can CY7C1061AV33-10ZXIT be used with 2.5 V logic interfaces?

No - the device requires 3.3 V ±0.3 V supply and has TTL-compatible input thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V). While inputs may accept 2.5 V signals, output drive strength and timing parameters are only guaranteed at VCC = 3.3 V; interfacing with 2.5 V systems requires level translation.

Does CY7C1061AV33-10ZXIT support interleaved read/write operations?

No - it is an asynchronous SRAM with no internal arbitration or pipelining. Read and write cycles are discrete, non-overlapping operations controlled by CE, OE, WE, and byte enables. Concurrent access requires external logic or controller sequencing.

How does the dual CE (CE1/CE2) architecture improve system reliability?

The CE1 (active-LOW) and CE2 (active-HIGH) pair prevents false selection during power-up, reset, or noise spikes: both signals must be simultaneously valid before the device activates. This eliminates partial-enable glitches common with single-CE designs in electrically noisy industrial environments.