Infineon Technologies CY7C1061AV33-12ZXCT

Overview

CY7C1061AV33-12ZXCT from Cypress Semiconductor is a 16-Mbit (1,048,576 × 16) asynchronous CMOS static RAM with 3.3 V ±0.3 V supply, 12 ns maximum access time (tAA), 2.0 V data retention, and automatic CE-controlled power-down. It supports byte-wide writes via independent BLE/BHE controls and operates across commercial temperature range (0°C to +70°C) in a Pb-free 54-pin TSOP II package. Used in legacy embedded controllers requiring fast, low-power, non-volatile SRAM buffering.

For engineers reviewing the CY7C1061AV33-12ZXCT datasheet, CY7C1061AV33-12ZXCT pinout, CY7C1061AV33-12ZXCT application, or CY7C1061AV33-12ZXCT equivalent, key selection criteria include tAA = 12 ns read timing, dual chip enable (CE1/CE2) logic for memory expansion, TTL-compatible I/O levels, and 50 mA CMOS standby current at VCC = 3.3 V.

Technical Context

This SRAM implements a fully asynchronous interface with no internal clocks or refresh circuitry. Read and write operations are controlled solely by CE1, CE2, OE, WE, BLE, and BHE signals - enabling deterministic timing without clock domain constraints. Address decoding is performed by dedicated row/column decoders driving a 1M × 16 memory array.

Power management relies on two distinct standby modes: ISB1 (TTL-input CE power-down, 70 mA max) and ISB2 (CMOS-input CE power-down, 50 mA max). Data retention at 2.0 V is guaranteed with tCDR ≥ 1 ms after VCC drop, and all I/O pins enter high-impedance state during deselection, output disable, or active write cycles.

Key Specifications

Pinout & Package

Package: 54-pin Thin Small Outline Package Type II (TSOP II), Pb-free, body size 10.16 mm × 20.00 mm × 1.20 mm, JEDEC MO-141AC compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Compared with IS61LV102416-12TQLI and AS6C1008-12ZIN, CY7C1061AV33-12ZXCT offers native 16-bit width with dual CE logic and guaranteed 2.0 V data retention - simplifying bus interface design and enhancing robustness in voltage-variable environments.

Availability

CY7C1061AV33-12ZXCT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, legacy telecom line card caches, and medical imaging control panels requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1061AV33-12ZXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

The CY7C1061AV33 belongs to Cypress's legacy asynchronous SRAM product line, engineered for pin-compatible replacement of older 3.3 V SRAMs in systems where deterministic timing, low standby power, and data retention under brown-out conditions are critical.

FAQ

What is the minimum VCC required for valid read/write operation?

The device requires VCC ≥ 3.0 V for functional operation. Valid SRAM access begins 1 ms after VCC reaches 3.0 V (tpower). Below 3.0 V, only data retention at 2.0 V is guaranteed - no read/write is permitted. This threshold is defined in the "AC Test Loads and Waveforms" section and verified across temperature and process corners.

Can CE1 and CE2 be driven by the same signal?

No - CE1 is active-LOW and CE2 is active-HIGH; driving them with identical logic levels violates the required dual-enable condition (CE1 = LOW AND CE2 = HIGH). Doing so forces the device into power-down mode (ISB) or high-impedance state. Proper decoding requires complementary CE signals or a simple inverter between them.

How does byte write control interact with OE during mixed read/write sequences?

OE controls output driver enable independently of BLE/BHE. During a write, OE must be HIGH to prevent bus contention; BLE/BHE then gate which byte lanes accept input data. During a read, OE must be LOW to enable outputs, and BLE/BHE determine which byte lanes drive valid data - allowing simultaneous read of one byte and write to another in pipelined protocols.

Is the 54-pin TSOP II package RoHS-compliant?

Yes - the "ZXC" suffix in CY7C1061AV33-12ZXCT explicitly denotes Pb-free (RoHS-compliant) construction per Cypress ordering nomenclature. The package uses matte tin lead finish and complies with JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3) for standard reflow processing.