Infineon Technologies CY7C1061AV33-12ZXIT

Overview

CY7C1061AV33-12ZXIT from Cypress Semiconductor is a 16-Mbit (1,048,576 × 16) asynchronous CMOS static RAM with 3.3 V ±0.3 V supply, 12 ns maximum access time (tAA), 2.0 V data retention, and dual chip enable (CE1/CE2) for flexible memory expansion. It operates in industrial temperature range (–40°C to +85°C) and supports byte-wide writes via BHE/ BLE controls in embedded control, networking buffers, and FPGA configuration storage.

For engineers reviewing the CY7C1061AV33-12ZXIT datasheet, CY7C1061AV33-12ZXIT pinout, CY7C1061AV33-12ZXIT application, or CY7C1061AV33-12ZXIT equivalent, key selection criteria include tAA = 12 ns timing, automatic CE power-down current (ISB2 = 50 mA), TTL-compatible I/O levels, and Pb-free 54-pin TSOP II packaging with verified industrial-grade reliability.

Technical Context

This SRAM implements a full asynchronous interface with independent byte enables (BHE/BLE) enabling selective upper- or lower-byte writes without read-modify-write cycles. Its dual CE architecture (CE1 active-low, CE2 active-high) allows hierarchical memory mapping and seamless bank switching in multi-chip systems.

The device features automatic power-down when deselected (CE1 HIGH/CE2 LOW or CE1 LOW/CE2 LOW), delivering ISB2 = 50 mA standby current at VCC = 3.3 V. Data retention is guaranteed down to 2.0 V, supported by internal voltage regulation and tCDR > 1 ms minimum retention delay after VCC drop.

Key Specifications

Pinout & Package

Package: 54-pin Thin Small Outline Package Type II (TSOP II), Pb-free, body size 10.16 mm × 20.00 mm × 1.20 mm, JEDEC MO-143AC compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Compared with IS61WV102416BLL-12MLI and W9812G6JH-12, the CY7C1061AV33-12ZXIT provides deterministic zero-refresh operation, dual CE power management, and true byte-selective writes-critical for real-time deterministic systems where predictability outweighs raw density or standby current.

Availability

CY7C1061AV33-12ZXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, FPGA configuration storage, and telecom line card packet buffers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1061AV33-12ZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

The CY7C1061AV33 belongs to Cypress's high-speed asynchronous SRAM product line, designed specifically for deterministic, low-latency memory interfacing in real-time embedded systems where refresh-free operation and industrial temperature resilience are mandatory.

FAQ

What is the minimum VCC required to retain data in CY7C1061AV33-12ZXIT?

Data retention is guaranteed at VCC ≥ 2.0 V. The device maintains stored contents indefinitely at this voltage level, provided ambient temperature remains within the industrial range (–40°C to +85°C) and tCDR ≥ 1 ms is observed after VCC drops below 3.0 V. No external circuitry is needed-the internal regulator sustains core memory array bias.

Can CY7C1061AV33-12ZXIT operate with CE1 and CE2 both asserted simultaneously?

No-CE1 and CE2 use complementary logic: CE1 must be LOW and CE2 must be HIGH for normal operation. If both are asserted (e.g., CE1 = LOW and CE2 = LOW), the device enters automatic power-down mode (ISB2 = 50 mA), disabling all I/O and placing outputs in high-impedance state regardless of OE or WE status.

How does byte enable (BLE/BHE) affect write timing parameters?

BLE and BHE do not alter tWC, tAW, or tSD values-they only gate data transfer to respective IO byte lanes. Write timing is defined by CE1/CE2 and WE overlap; when BLE = LOW, IO0–IO7 are written; when BHE = LOW, IO8–IO15 are written. Both can be active simultaneously for full 16-bit writes without timing penalty.

Is the 54-pin TSOP II package of CY7C1061AV33-12ZXIT RoHS-compliant?

Yes-the "Z" suffix in CY7C1061AV33-12ZXIT denotes Pb-free construction. The package meets RoHS Directive 2011/65/EU and J-STD-609 Category 3 marking requirements, with lead content < 0.1 wt% and fully compatible with standard SnAgCu reflow profiles.