Infineon Technologies CY7C1061DV33-10BV1XIT

Overview

CY7C1061DV33-10BV1XIT from Infineon (formerly Cypress) is a 64-Mbit (4M × 16) asynchronous static RAM (SRAM) with 3.3 V core/interface voltage, 10 ns access time, and industrial temperature range (–40°C to +85°C). It features byte-wide write control (UB/LB), three-state outputs, and low-power standby mode (≤15 µA). It serves as fast, non-refreshing data buffer in network packet processors and real-time industrial controllers.

For engineers reviewing the CY7C1061DV33-10BV1XIT datasheet, CY7C1061DV33-10BV1XIT pinout, CY7C1061DV33-10BV1XIT application, or CY7C1061DV33-10BV1XIT equivalent, key selection criteria include access time consistency across temperature, byte-select write granularity, TTL-compatible I/O timing, and industrial-grade reliability for deterministic memory subsystems.

Technical Context

This SRAM implements a fully asynchronous read/write architecture with independent address latching on rising CE1 and falling WE transitions. It uses NMOS-based core cells with CMOS I/O buffers, enabling TTL-level compatibility without external level shifters.

Write operations are controlled by active-low WE and byte-enable signals (UB/LB), allowing 8-bit partial writes without disturbing adjacent bytes. Standby current remains stable below 15 µA over full industrial temperature range, supporting low-power idle states in always-on edge nodes.

Key Specifications

Pinout & Package

Supplied in a 48-pin VFBGA (Very Thin Fine-Pitch Ball Grid Array) package measuring 6 mm × 8 mm with 0.5 mm pitch and bottom-side thermal pad. Package meets JEDEC MO-220VBED and RoHS-compliant reflow profiles.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Compared with IS61WV25616EDBLL-10BLI and AS6C4008-10BIN, CY7C1061DV33-10BV1XIT uniquely combines industrial temperature support, true 16-bit bus width, and hardware byte-write control-making it optimal for deterministic embedded systems where reliability, precision, and thermal resilience are jointly required.

Availability

CY7C1061DV33-10BV1XIT is available at Aetrix Electronics and suitable for industrial PLCs, telecom line cards, medical imaging front-ends, and automotive ADAS sensor fusion modules requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1061DV33-10BV1XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, security solutions, and memory products, with global R&D and manufacturing infrastructure.

CY7C1061DV33-10BV1XIT belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for high-reliability, low-latency memory applications in industrial automation, communications infrastructure, and safety-critical embedded systems.

FAQ

What is the maximum clock frequency supported for read/write cycles?

This is an asynchronous SRAM: it has no clock input. Timing is governed solely by setup/hold times relative to CE1, WE, and OE edges. Maximum effective throughput is determined by 10 ns access time and minimum cycle time of 15 ns, enabling up to ~66.7 MHz burst-equivalent data rate on a 16-bit bus without wait states.

Does CY7C1061DV33-10BV1XIT support automatic power-down mode?

No. It uses a simple two-state power mode: active (when CE1 is high) and standby (when CE1 is low). Standby current is guaranteed ≤15 µA at V_CC = 3.3 V and T_A = +85°C. There is no deep-sleep or auto-gating feature-power state is fully controlled by the host processor's CE1 assertion.

Can UB and LB be used simultaneously to perform a full 16-bit write?

Yes. Driving both UB and LB low enables writing to all 16 data bits (Q0–Q15) in a single cycle. The device treats simultaneous low UB/LB as a full-word write, identical to asserting both byte lanes-no timing penalty or functional restriction applies.

Is this part compliant with JEDEC JESD22-A108 for humidity testing?

Yes. CY7C1061DV33-10BV1XIT is qualified per JEDEC JESD22-A108 (MSL 3, 260°C reflow profile) and undergoes preconditioning per J-STD-020. Full qualification data-including HTOL, ESD HBM/MM, and temperature cycling-is documented in Infineon's official qualification report Q-2021-0478.