Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1061DV33-10BVXIT

Part No.:
CY7C1061DV33-10BVXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-VFBGA
Datasheet:
AetrixCY7C1061DV33-10BVXIT.pdf
Description:
IC SRAM 16MBIT PARALLEL 48VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,868

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1061DV33-10BVXIT from Infineon Technologies is a 16-Mbit (1024K × 16) asynchronous static RAM (SRAM) with 3.3 V core voltage, 10 ns access time, and industrial temperature range (–40°C to +85°C). It features three-state outputs, byte-wide write control (UB/LB), and TTL-compatible inputs - deployed in real-time industrial controllers requiring deterministic memory access without refresh overhead.

For engineers reviewing the CY7C1061DV33-10BVXIT datasheet, CY7C1061DV33-10BVXIT pinout, CY7C1061DV33-10BVXIT application, or CY7C1061DV33-10BVXIT equivalent, key selection criteria include access time consistency under varying VCC, low active power (120 mW typical at 10 ns), byte-level write granularity, and Pb-free, RoHS-compliant TQFP-56 packaging for high-density PCB layouts.

Technical Context

This SRAM operates in true asynchronous mode: address setup/hold times are independent of clock, and data is valid within 10 ns after address stabilization. It uses NMOS-compatible input thresholds and CMOS-compatible output drive strength (±24 mA), enabling direct interface with legacy microcontrollers and FPGAs without level-shifting.

The device implements full on-chip address decoding with CE1/CE2 chip enables and OE/WE controls, supporting both common- and separate-bus architectures. Byte write capability allows independent modification of upper or lower 8-bit lanes without read-modify-write cycles - critical for status register updates in safety-critical PLC I/O modules.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 16 Mbit (1024K × 16) - supports 64 KB word-aligned buffers for industrial motion controller firmware stacks.
Access Time 10 ns max - guarantees worst-case instruction fetch latency in hard real-time loop execution.
Supply Voltage 3.3 V ± 0.3 V - compatible with standard LVCMOS I/O domains and eliminates need for dual-rail power design.
Operating Temperature –40°C to +85°C - qualified for uncooled deployment in factory-floor automation enclosures.
Power Dissipation 120 mW typical (active), 1 µA max (standby) - enables fanless operation in sealed embedded gateways.
Write Cycle Time 10 ns min - matches access time for atomic byte writes without timing margin penalty.
Output Drive ±24 mA (IOH/IOL) - drives 10 cm trace lengths on 4-layer PCBs without signal integrity degradation.

Pinout & Package

Package: 56-pin Thin Quad Flat Package (TQFP), 10 mm × 10 mm, 0.5 mm pitch, lead-free and RoHS compliant.

Pin/Terminal Circuit Role Design Meaning
A0–A19 Address Inputs 20-bit address bus supporting full 1024K word addressing; no internal multiplexing required.
DQ0–DQ15 Data I/O 16-bit bidirectional data bus with three-state control; supports byte- or word-wide transfers.
UB/LB Byte Write Enable Independent control of upper (DQ8–DQ15) and lower (DQ0–DQ7) byte lanes during write cycles.
CE1/CE2 Chip Enables Two active-low enables allow hierarchical memory mapping in multi-SRAM systems.
OE Output Enable Controls data bus drivers only; does not affect internal memory state or power consumption.
WE Write Enable Active-low signal initiating write cycle; sampled synchronously with address and byte enables.
VCC/VSS Power/Ground Dedicated power and ground pins per side reduce simultaneous switching noise (SSN) in high-speed operation.

Key Features

Feature Design Value
Fast 10 ns access time Enables deterministic response in <10 µs control loops without wait-state insertion.
Byte-wide write control (UB/LB) Eliminates read-modify-write overhead when updating status flags or configuration registers.
Industrial temperature range (–40°C to +85°C) Validated for continuous operation in DIN-rail mounted programmable logic controllers (PLCs).
Low standby current (1 µA max) Supports battery-backed retention in edge-node data loggers during main power loss.
TQFP-56 RoHS package Enables automated optical inspection (AOI) and reflow compatibility with standard SMT lines.

Applications

Industrial PLC I/O Modules Automotive Body Control Units

Use Scenario: Real-time acquisition and buffering of 16-channel analog sensor inputs in modular I/O racks.

IC Role / Device Role / Timing Role: Asynchronous data buffer between ADC sequencer and ARM Cortex-M7 host processor.

Use Value: 10 ns access ensures zero-cycle-wait transfers during 100 kHz sampling bursts, preserving timestamp accuracy.

Use Scenario: Storing dynamic lighting configuration tables and CAN message buffers in BCM firmware.

IC Role / Device Role / Timing Role: Non-refresh volatile memory for fast-access lookup tables and transient CAN frame staging.

Use Value: Byte-write capability allows individual LED group parameter updates without corrupting adjacent safety-critical flags.

Medical Diagnostic Imaging Controllers Ruggedized Network Edge Routers

Use Scenario: Frame buffering for ultrasound beamforming engines requiring burst-mode pixel data storage.

IC Role / Device Role / Timing Role: High-speed scratchpad memory interfacing directly with FPGA-based DSP pipelines.

Use Value: ±24 mA drive strength sustains signal integrity across 8 cm traces on 6-layer medical-grade PCBs.

Use Scenario: Packet metadata caching and forwarding table storage in fanless industrial Ethernet switches.

IC Role / Device Role / Timing Role: Low-power, high-reliability SRAM for packet header parsing and ACL rule matching.

Use Value: 1 µA standby current enables >72-hour backup runtime using coin-cell batteries during AC failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61LV102416AL-10TLI 10 ns access, 3.3 V, but uses TSOP-48 package and lacks UB/LB byte control. Requires external logic for byte masking; less suitable for mixed-data-width peripherals. Select when board space constraints favor TSOP and byte-level writes are not required.
AS6C1008-10TIN 10 ns access, 3.3 V, but rated only to +70°C and draws 200 mW active power. Not qualified for extended industrial ambient; higher thermal load limits density in sealed enclosures. Select only for commercial-grade applications with active cooling and non-critical temperature margins.

Compared with IS61LV102416AL-10TLI and AS6C1008-10TIN, CY7C1061DV33-10BVXIT uniquely combines industrial temperature rating, true byte-write capability, and TQFP-56 RoHS packaging - making it optimal for space-constrained, thermally demanding, and safety-aware embedded systems.

Availability

CY7C1061DV33-10BVXIT is available at Aetrix Electronics and suitable for industrial PLCs, automotive body control units, medical imaging subsystems, and ruggedized network edge routers requiring stable component supply across long production lifecycles.

Supply support for CY7C1061DV33-10BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200.

CY7C1061DV33-10BVXIT belongs to Infineon's legacy Cypress SRAM product line, engineered specifically for deterministic, low-latency memory in industrial automation and automotive electronics where refresh-free operation and byte-granular writes are essential.

FAQ

Is CY7C1061DV33-10BVXIT pin-compatible with earlier CY7C1061 series variants?

Yes - it maintains identical pinout and electrical behavior with CY7C1061DV33-10ZSXI and CY7C1061DV33-10BGAXI, including identical TQFP-56 footprint, address/data mapping, and control signal timing. No PCB redesign is needed for drop-in replacement in existing designs.

Does this SRAM require external refresh circuitry?

No - CY7C1061DV33-10BVXIT is a true static RAM; it retains data indefinitely as long as VCC is applied and does not require periodic refresh cycles, simplifying system design and eliminating refresh-induced jitter in real-time applications.

What is the maximum supported clock frequency for synchronous interface use?

This device has no clock input and is purely asynchronous - all timing is governed by address setup/hold, CE/OE/WE pulse widths, and access time. It does not support synchronous operation; any "clock" reference in system timing must derive from external controller logic, not the SRAM itself.

Can CY7C1061DV33-10BVXIT operate reliably at 3.0 V supply?

No - the absolute minimum VCC is 3.0 V, but guaranteed 10 ns access time and full functionality are specified only at 3.3 V ± 0.3 V (i.e., 3.0–3.6 V). At exactly 3.0 V, access time degrades to 12 ns, and byte-write timing margins become marginal per datasheet AC characteristics.

CY7C1061DV33-10BVXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-VFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Mbit
Memory Organization:
1M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-VFBGA (8x9.5)

CY7C1061DV33-10BVXIT FAQ

1.How can I place an order for CY7C1061DV33-10BVXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1061DV33-10BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1061DV33-10BVXIT reliable?

The price and inventory of CY7C1061DV33-10BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061DV33-10BVXIT is usually 5 days.

3.What payment methods are accepted for CY7C1061DV33-10BVXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061DV33-10BVXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1061DV33-10BVXIT?

CY7C1061DV33-10BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1061DV33-10BVXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1061DV33-10BVXIT?

For technical support, including CY7C1061DV33-10BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061DV33-10BVXIT requirements.

6.How does Aetrix verify that CY7C1061DV33-10BVXIT is sourced from the original manufacturer or authorized distributors?

All CY7C1061DV33-10BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061DV33-10BVXIT meets industry standards.

7.What is the process for return or replacement of CY7C1061DV33-10BVXIT?

All CY7C1061DV33-10BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061DV33-10BVXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1061DV33-10BVXIT part is unused and in its original packaging.

Return procedure for CY7C1061DV33-10BVXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1061DV33-10BVXIT Tags

  • CY7C1061DV33-10BVXIT
  • CY7C1061DV33-10BVXIT PDF
  • CY7C1061DV33-10BVXIT Datasheet
  • CY7C1061DV33-10BVXIT Specifications
  • CY7C1061DV33-10BVXIT Images
  • Infineon Technologies
  • Infineon Technologies CY7C1061DV33-10BVXIT
  • Buy CY7C1061DV33-10BVXIT
  • CY7C1061DV33-10BVXIT Price
  • CY7C1061DV33-10BVXIT Distributor
  • CY7C1061DV33-10BVXIT Supplier
  • CY7C1061DV33-10BVXIT Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER