Infineon Technologies CY7C1061G-10BVJXI

Overview

CY7C1061G-10BVJXI from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), designed for high-reliability data storage in industrial control and telecom infrastructure. It operates at 10 ns access time, supports 1.65–2.2 V / 2.2–3.6 V / 4.5–5.5 V supply ranges, and features an ERR output pin for real-time single-bit error detection and correction during read cycles.

For engineers reviewing the CY7C1061G-10BVJXI datasheet, CY7C1061G-10BVJXI pinout, CY7C1061G-10BVJXI application, or CY7C1061G-10BVJXI equivalent, this device is selected for systems requiring deterministic ECC protection without write-back, low standby current (20 mA typical), TTL-compatible I/O, and 1.0 V data retention - especially where memory integrity must be maintained under extended temperature (-40°C to +85°C) and multi-voltage rail conditions.

Technical Context

This SRAM implements on-die Hamming-code-based ECC logic that detects and corrects single-bit errors in real time during read operations, with no automatic write-back - correction occurs only in the read path. The ERR pin asserts high upon successful correction, enabling system-level fault logging without interrupting memory access flow.

It supports dual chip enable (CE1/CE2) configuration with CE1=LOW and CE2=HIGH for selection, and byte-level writes via BHE (I/O8–I/O15) and BLE (I/O0–I/O7). Address range spans A0–A19 (1M words), with A19 placed at ball G2 in the BVJXI package variant, confirming its dual-CE, ERR-enabled VFBGA configuration.

Key Specifications

Pinout & Package

48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 × 8 mm footprint, 1.0 mm height, 0.5 mm ball pitch. Pinout corresponds to Figure 5 in datasheet Rev. *T: Dual chip enable (CE1/CE2) and ERR output enabled, with address MSB A19 located at ball G2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with AS7C31026B-10TIN and IS61WV102416BLL-10MLI, CY7C1061G-10BVJXI uniquely delivers on-die ECC with ERR output, multi-voltage support, and VFBGA packaging - making it the only option among the three that satisfies both industrial temperature reliability and hardware-level fault detection without design-level trade-offs.

Availability

CY7C1061G-10BVJXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, telecom line card caches, railway signaling controllers, and medical imaging frame buffers requiring stable component supply across extended product lifecycles.

Supply support for CY7C1061G-10BVJXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-reliability memory solutions.

CY7C1061G-10BVJXI belongs to Infineon's legacy Cypress SRAM portfolio, engineered specifically for mission-critical industrial and infrastructure applications demanding hardware ECC, wide voltage operation, and long-term obsolescence mitigation.

FAQ

Does CY7C1061G-10BVJXI perform automatic write-back after ECC correction?

No. The device performs single-bit error correction only in the read path and does not automatically rewrite corrected data to the memory array. The ERR pin signals correction occurrence, but the original erroneous word remains unmodified unless explicitly rewritten by the host system. This behavior is documented in Note 1 of the datasheet and avoids unintended write cycles during diagnostic reads.

What is the function of the ERR pin, and how should it be interfaced?

The ERR pin is an open-drain output that asserts HIGH during a read cycle when a single-bit error is detected and corrected. It must be pulled up externally (typically 10 kΩ to VCC) and monitored asynchronously by the host controller. If unused, the pin should be left floating per datasheet Note 6 - no internal pull-up or pull-down is provided, and driving it actively may damage the output stage.

Can CY7C1061G-10BVJXI operate at 2.5 V VCC?

Yes. The device supports the 2.2 V–3.6 V supply range, and 2.5 V falls within specification. At 2.5 V, tAA remains 10 ns (guaranteed), ICC is 90 mA typical at 100 MHz, and all DC electrical characteristics including VIH (2.0 V min), VOL (0.4 V max), and ISB2 (20 mA typical) remain valid per Table on page 7 of Rev. *T.

How is the BVJXI package variant distinguished from other CY7C1061G options?

BVJXI denotes the 48-ball VFBGA package with dual chip enable (CE1/CE2), ERR output enabled, and A19 address pin located at ball G2 - matching Figure 5 in the datasheet. This distinguishes it from BVXI (same package but A19 at H6) and BV1XI (single CE, A19 at G2), ensuring correct PCB layout and signal routing for ECC-aware memory controllers.